onsemi-HUF76629D3ST
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HUF76629D3ST
–
F085
®
N-Channel Logic Level UltraFET
Power MOSFET
100V, 20A, 52m
Ω
D
Features
Typ r
= 41m
Ω
at V
= 10V, I
= 20A
GS D
DS(on)
Typ Q
= 39nC at V
= 10V, I
= 20A
GS D
g(tot)
G
UIS Capability
RoHS Compliant
Qualified to AEC Q101
S
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted
Symbol
V
DSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
100
V
V
V
GS
±16
Drain Current – Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
T
C
= 25°C
C
= 25°C
20
I
D
A
T
See Figure4
E
AS
P
D
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
o
C
(Note 2)
(Note 3)
231
mJ
W
W/
o
C
o
C
o
C/W
o
C/W
150
1
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to + 175
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case
1
Maximum Thermal Resistance Junction to Ambient
52
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
HUF76629D3ST HUF76629D3ST
–
F085 D-PAK(TO-252)
13”
2500 units
Notes:
1: Current
is limited by bondwire configuration.
2: Starting
T =
25°C, L = 1.8mH, I
= 16A, V
= 100V during inductor charging and V
= 0V during time in avalanche
J
AS
DD
DD
3:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
R
θ
JC
is guaranteed by design while
R
θ
JA
is determined by the user’s board design.
The maximum rating
2
presented here is based on mounting on a 1 in
pad of 2oz copper.
©2013
Semiconductor Components Industries, LLC
August-2017,
Rev.
3
Publication Order number:
HUF76629D3ST-F085/D
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
100
–
–
–
–
–
1
V
V
DS
=100V, T
J
= 25
o
C
–
–
–
μ
A
mA
nA
V
GS
= 0V
T
J
= 175
o
C(Note 4)
1
I
GSS
V
GS
= ±16V
±100
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.6
41
3.0
52
V
T
J
= 25
o
C
–
–
m
Ω
m
Ω
m
Ω
m
Ω
I
V
D
= 20A,
GS
= 10V
T
J
= 175
o
C(Note 4)
T
J
= 25
o
C
102
47
128
55
r
DS(on)
Drain to Source On Resistance
I
D
= 20A,
GS
= 4.5V
T
J
= 175
o
C(Note 4)
115
135
V
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
1280
214
33
–
–
pF
pF
pF
Ω
V
DS
= 25V, V
GS
= 0V,
C
oss
C
rss
R
g
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
–
f = 1MHz
2.5
39
–
Q
g(
T
o
T)
Q
g(th)
Q
gs
T
o
tal Gate Charge
V
GS
= 0 to 10V
V
GS
= 0 to 2V
43
3
–
nC
nC
nC
nC
V
DD
= 50V
I
D
= 20A
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
2.3
3.5
11
Q
gd
–
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
7
27
–
ns
ns
ns
ns
ns
ns
12
38
5
–
V
DD
= 50
V
,
I
D
= 20A,
V
GS
= 10V, R
GEN
= 8.2
Ω
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–
–
t
off
Turn-Off Time
–
47
Drain-Source Diode Characteristics
I
SD
= 20A, V
GS
= 0V
SD
= 10A, V
GS
= 0V
–
–
–
–
–
–
1.25
1.0
V
V
SD
Source to Drain Diode Voltage
I
V
T
rr
Reverse Recovery Time
77
221
99
ns
nC
I
F
= 20A, dI
SD
/dt = 100A/
μ
s,
DD
=80V
V
Q
rr
Reverse Recovery Charge
305
Notes:
4: The
maximum value is specified by design at T
= 175°C.
Product is not tested to this condition in production.
J
2
Typical Characteristics
25
20
15
10
5
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 10V
V
GS
= 4.5V
0
25
50
T
75
100
125
150
175
0
25
50
75
100
125
150
175
,
CASE TEMPERATURE
(
o
C
)
T
C
, CASE TEMPERATURE(
o
C)
C
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
Figure 1.
Normalized Power Dissipation vs Case
Temperature
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
SINGLE PULSE
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JA
θ
JA C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
1000
100
10
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 – T
C
I = I
2
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
3
Typical Characteristics
100
10
1
If R = 0
= (L)(I
)/(1.3*RATED BV
100
10
t
– V
)
AV
AS
DSS
DD
If R
AV
≠
0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DSS DD
AS
100us
1ms
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
T
= MAX RATED
o
J
100ms
= 25
C
C
0.1
0.001
0.01
0.1
1
10
100
1
10
100
300
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to
On Semiconductor
Application Notes AN7514 and
AN7515
Figure 5.
Forward Bias Safe Operating Area
Figure 6.
Unclamped Inductive Switching Capability
50
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
40
30
20
10
0
V
DD
= 5V
10
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= 25
o
C
1
T
J
= -55
o
C
0.1
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Forward Diode Characteristics
80
50
40
60
40
20
0
30
V
GS
10V Top
8V
6V
5V
4.5V
4V Bottom
V
GS
10V Top
8V
6V
5V
4.5V
4V Bottom
20
10
80
μ
s PULSE WIDTH
Tj=25
o
C
80
μ
s PULSE WIDTH
Tj=175
o
C
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9.
Saturation Characteristics
Figure 10.
Saturation Characteristics
4
Typical Characteristics
200
3.0
2.4
1.8
1.2
0.6
0.0
I
D
=
20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
150
100
50
T
J
= 175
o
C
I
D
= 20A
T
J
= 25
o
C
V
GS
= 10V
0
0
2
4
6
8
10
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 11.
Rdson vs Gate Voltage
Figure 12.
Normalized Rdson vs Junction
Temperature
1.4
1.2
V
GS
=
V
DS
I
D
= 1mA
I
= 250
μ
A
D
1.2
1.0
0.8
0.6
0.4
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE(
o
C)
Figure 13.
Normalized Gate Threshold Voltage vs
Temperature
Figure 14.
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
I
D
= 20A
8
C
iss
V
DD
= 40V
1000
6
V
DD
= 50V
V
DD
= 60V
C
oss
4
2
0
100
C
rss
f = 1MHz
V
GS
= 0V
10
0.1
1
10
100
0
10
20
30
40
Q
g
,
GATE CHARGE(nC)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Figure 15.
Capacitance vs Drain to Source
Voltage
Figure 16.
Gate Charge
vs Gate to Source
Voltage
5
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6
