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ypical” parameters which may be provided in
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d
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IRF644B
N-Channel BFET MOSFET
250 V, 14 A, 280 m
Ω
Features
•
•
•
•
•
•
14 A, 250 V, R
DS(on)
= 280 m
Ω
@ V
GS
= 10 V
Low gate charge (Typ. 47 nC)
Low Crss (Typ. 30 pF)
Description
These N-Channel enhancement mode power field effect
transistors are produced using
ON Semiconductor
’s
proprietary, planar,
DMOS technology. This advanced
technology has been especially tailored to minimize on-
Fast Switching
state
resistance,
provide
superior
switching
100% Avalanche Tested
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency switching
DC/DC
converters and switch mode power supplies.
Improved dv/dt Capability
D
G
D
G
S
TO-220
Absolute Maximum Ratings
T =
25°C unless otherwise noted.
C
S
Symbol
V
DSS
Parameter
IRF644B_FP001
Unit
V
Drain-Source Voltage
250
14
I
D
– Continuous (T
C
= 25°C)
– Continuous (T
C
= 100°C)
– Pulsed
Drain Current
A
8.9
A
I
DM
(Note 1)
Drain Current
56
A
V
GSS
E
AS
I
AR
Gate-Source Voltage
30
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
480
mJ
A
14
E
AR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
13.9
4.8
mJ
V/ns
W
dv/dt
P
D
139
– Derate Above 25°C
1.11
-55 to +150
W/°C
°C
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering,
1/8
”
from Case for 5 Seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
IRF644B
–
FP001
Unit
°C
/
W
°C
/
W
°C
/
W
R
θ
JC
R
θ
CS
R
θ
JA
0.9
0.5
62.5
©2001
Semiconductor Components Industries, LLC.
September-2017,
Rev
3
3
Publication Order Number:
IRF644B-FP001
/D
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
IRF644B
–
FP001
IRF644B
TO-220
Tube
N/A
N/A
50 units
Electrical Characteristics
T =
25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
V
GS
= 0 V, I
D
= 250
μ
A
Drain-Source Breakdown Voltage
250
—
—
—
—
V
Δ
BV
DSS
Breakdown Voltage
T
e
mperature
I
D
= 250
μ
A, Referenced to 25°C
0.24
V/°C
/
Δ
T
J
Coefficient
I
DSS
V
DS
= 250
V
,
V
GS
= 0 V
—
—
—
—
—
—
—
—
10
μ
A
μ
A
nA
nA
Zero Gate Voltage Drain Current
V
DS
= 200
V
,
T
C
= 125°C
V
GS
= 30
V
,
V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
100
100
-100
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10
V
,
I
D
= 7.0 A
V
DS
= 40
V
,
I
D
= 7.0 A
Gate Threshold Voltage
2.0
—
—
4.0
0.28
—
V
Ω
S
R
DS(on)
Static Drain-Source
On-Resistance
0.22
11.7
g
FS
Forward Transconductance
—
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
1250
150
30
1600
195
40
pF
pF
pF
V
DS
= 25
V
,
V
GS
= 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
20
115
150
95
50
240
310
200
60
ns
ns
V
DD
= 125
V
,
I
D
= 14 A,
R
G
= 25
Ω
ns
(Note 4)
ns
Q
g
47
nC
nC
nC
V
DS
= 200
V
,
I
D
= 14 A,
GS
= 10 V
Q
gs
Q
gd
6.2
23
—
V
(Note 4)
—
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
—
—
—
—
—
—
—
14
56
1.5
—
A
A
I
SM
V
SD
t
rr
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 14 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
—
V
V
GS
= 0 V, I
S
= 14 A,
240
1.96
ns
μ
C
dI
F
/ dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
—
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 3.9 mH, I
= 14 A, V
= 50 V, R
= 25
Ω,
starting T =
25°C.
AS
DD
G
J
3. I
≤
14 A, di/dt
≤
300 A/
μ
s, V
≤
BV starting
T =
25°C.
4. Essentially independent of operating temperature.
SD
DD
DSS, J
2
Typical Characteristics
V
G
S
To
p
:
15.
0
V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
10
10
1
Botto
m
:
5
.
0
V
150
o
C
25
o
C
0
10
10
0
-55
o
C
※
N
otes :
※
N
otes :
1. V
D
S
=
4
0V
2. 250
μ
s
P
ulse Test
1. 250
μ
s
P
ulse Test
2. T
C
=
2
5
℃
-1
10
-1
10
-1
0
10
10
1
2
4
6
8
10
10
V
G
S
,
G
ate-Source Voltage [V]
V
D
S
,
D
rain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
V
GS
= 10V
V
GS
= 20V
10
1
10
0
150
℃
25
℃
※
N
otes :
1. V
G
S
=
0
V
2. 250
μ
s
P
ulse Test
※
N
ote : T = 25
℃
J
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
10
20
30
40
50
V
S
D
,
S
ource-Drain voltage [V]
I
D
,
D
rain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
3000
2500
2000
1500
1000
500
12
10
8
C
iss
=
C
g
s
+
C
g
d
(C
d
s
=
s
horted)
C
o
ss
=
C
d
s
+ C
gd
C
rss
= C
gd
V
DS
= 50V
V
DS
= 125V
V
DS
= 200V
C
iss
6
C
oss
4
C
※
N
otes :
1. V
G
S
= 0 V
2. f
=
1
M
Hz
rss
2
※
N
ote : I
D
=
1
4 A
0
0
10
-1
0
10
10
1
0
5
10
15
20
25
30
35
40
45
50
Q
G
,
T
otal Gate Charge [nC]
V
D
S
,
D
rain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3
Typical Characteristics
(Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
N
ote
s
:
1. V
G
S
= 0 V
2. I
D
=
2
50
μ
A
0.9
※
N
otes :
1. V
= 10 V
2. I
D
G
=
S
7
.0 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T,
J
unction Temperature [
o
C
]
T,
J
unction Temperature [
o
C
]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
15
12
9
Operation in This Area
is Limited by R
D
S(on)
2
10
100
μ
s
1
m
s
10 ms
1
10
DC
6
0
10
※
N
otes :
1. T
C
=
2
5
o
C
3
2. T = 150
o
C
J
3. Single Pulse
-1
0
25
10
0
2
10
10
1
50
75
100
125
150
10
T
C
,
C
ase Temperature [
℃
]
V
D
S
,
D
rain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
D = 0 .5
※
N
o
tes
1. Z
θ
J
C
(t)
2. D
uty Factor, D
=t
1
/t
2
:
=
0.9
℃
/W M
ax.
0 .2
3. T
J
M
–
T
C
=
P
D
M
*
Z
θ
J
C
(t)
10
-1
0 .1
0
.
05
P
DM
0 .0 2
0 .0 1
t
1
t
2
sin g le
p u lse
10
-2
1
0
-5
10
-4
10
–
3
10
-2
10
-1
10
0
10
1
t
1
, S
q
uare W
ave P
ulse D
uration [sec]
Figure 11. Transient Thermal Response Curve
4
V
GS
Same Type
as DUT
50K
Ω
Q
g
12V
200nF
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
V
DS
(t)
V
DD
DUT
G
S
t
p
t
p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
5
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering
ON Semiconductor
components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a
ON
Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of
ON Semiconductor
’s worldwide terms and
conditions, specif-ically the warranty therein, which covers
ON Semiconductor
products.
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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