onsemi-IRLM110ATF
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IRLM110A
Advanced Power MOSFET
FEATURES
BV
DSS
= 100
V
R
DS(on)
= 0.44
Ω
I
D
= 1.5
A
ν
ν
ν
ν
ν
ν
ν
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µ
A (Max.)
@ V
DS
= 100V
Lower R
DS(ON)
: 0.336
Ω
(Typ.)
SOT-223
2
1
3
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
100
1.5
Units
V
DSS
Drain-to-Source Voltage
V
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=70
o
C)
Drain Current-Pulsed
I
D
A
1.18
12
I
DM
V
GS
E
AS
I
AR
(1)
A
V
Gate-to-Source Voltage
±
20
60
Single Pulsed Avalanche Energy
Avalanche Current
(2)
(1)
(1)
(3)
mJ
A
1.5
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C) *
Linear Derating Factor
*
0.22
6.5
mJ
V/ns
W
2.2
P
D
T
J
, T
STG
T
L
0.018
W/
o
C
Operating Junction and
– 55
to +150
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
o
C
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
—
Max.
Units
o
C/W
R
θ
JA
Junction-to-Ambient *
56.8
*
When mounted on the minimum pad size recommended
(PCB Mount).
Rev. A
N-CHANNEL
POWER MOSFET
IRLM110A
Electrical Characteristics
(T
C
=25
o
C unless
otherwise specified)
Symbol
BV
DSS
Characteristic
Min. Typ. Max.
Units
Test Condition
V
GS
=0V,I
D
=250
µ
A
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/
o
C
V
100 —
—
∆
BV/
∆
T
J
V
GS(th)
I
D
=250
µ
A
See Fig 7
— 0.09 —
V
V
V
DS
=5V,I
D
=250
µ
A
1.0
—
—
2.0
100
GS
=20V
Gate-Source Leakage
, Forward
Gate-Source Leakage
, Reverse
—
—
—
—
I
GSS
nA
GS
=-20V
— -100
V
DS
=100V
V
DS
=80V,T
C
=125
o
C
(6)
—
—
1
I
DSS
Drain-to-Source Leakage Current
µ
A
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
R
DS(on)
V
GS
=5V,I
D
=0.75A
V
DS
=40V,I
D
=0.75A
(4)
(4)
—
—
Ω
0.44
—
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
—
—
—
—
—
—
—
—
—
—
—
2.0
S
180 235
V
GS
=0V,V
DS
=25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
65
25
25
30
45
25
8
50
20
8
pF
See Fig 5
V
DD
=50V,I
D
=5.6A,
10
17
8
R
G
=12
Ω
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
See Fig 13
(4)(5)
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”)
Charge
5.5
0.9
3.5
V
DS
=80V,V
GS
=5V,
I
D
=5.6A
Q
gs
Q
gd
nC
—
—
See Fig 6 & Fig 12
(4)(5)
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max.
Units
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=2.3A,V
GS
=0V
T
J
=25
o
C,I
F
=9.2A
—
—
—
—
—
—
1.5
12
1.5
—
A
I
SM
(1)
(4)
V
SD
t
rr
V
—
ns
µ
C
85
Q
rr
— 0.23 —
di
F
/dt=100A/
µ
s
(4)
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=40mH, I
AS
=1.5A, V
DD
=25V, R
G
=27
Ω
, Starting T
J
=25
o
C
③
I
SD
< 5.6A, di/dt < 250A/
μ
s, V
DD
< BV
DSS
, Starting T
J
=25
o
C
④
Pulse Test : Pulse Width = 250
µ
s, Duty Cycle < 2%
⑤
Essentially Independent of Operating Temperature
N-CHANNEL
POWER MOSFET
IRLM110A
Fig 1.
Output Characteristics
Fig 2.
Transfer Characteristics
2
V
GS
10
Top :
7.
0
V
6.
0
V
5.
5
V
5.
0
V
4.
5
V
4.
0
V
3.
5
V
2
10
175
o
C
1
Bottom :
3.
0
V
10
1
10
25
o
C
@
N
otes :
1. V
= 0 V
GS
@
N
otes :
–
5
5
o
C
2. V
= 40 V
1. 250
s Pulse Test
µ
DS
0
2. T
= 25
o
C
10
3. 250
s Pulse Test
µ
C
0
10
-1
0
1
0
2
4
6
8
10
10
10
10
V
G
S
,
G
ate-Source Voltage
[V]
V
D
S
,
D
rain-Source Voltage
[V]
Fig 3.
On-Resistance vs. Drain Current
Fig 4.
Source-Drain Diode Forward Voltage
0.08
2
10
V =
5 V
GS
0.06
0.04
0.02
0.00
1
10
V =
1
0 V
GS
@
N
ote
s
:
17
5
o
C
1. V
= 0 V
GS
@
N
ot
e
: T =
2
5
o
C
2
5
o
C
2. 250
s
P
uls
e
T
est
J
µ
0
10
0
30
60
90
120
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I ,
D
rain Current [A]
V
S
D
,
S
ource-Drain Voltage
[V]
D
Fig 5.
Capacitance vs. Drain-Source Voltage
Fig 6.
Gate Charge vs. Gate-Source Voltage
2500
2000
1500
1000
500
C
=
C
+C (C
=
s
horte
d
)
iss gs gd
ds
C
=
C
+C
oss ds gd
6
C
=
C
V =
2
0 V
rss gd
DS
C
i
ss
C
o
ss
C
r
ss
V =
5
0 V
DS
V =
8
0 V
DS
4
2
0
@
N
ote
s
:
1. V
= 0 V
GS
2.
f
= 1
M
Hz
@
N
ote
s
:I =
2
8 A
D
0
0
10
1
0
8
16
24
32
40
10
Q ,
T
otal Gate Charge [nC]
V
DS
,
D
rain-Source Voltage [V]
G
N-CHANNEL
POWER MOSFET
IRLM110A
Fig 7.
Breakdown Voltage vs. Temperature
Fig 8.
On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
@
N
otes :
1. V
GS
= 5 V
@
N
otes :
1. V
GS
= 0 V
2. I
= 14 A
D
2. I
= 250
A
µ
D
-75 -50 -25
0
25
50
75 100 125 150 175 200
-75 -50 -25
0
25
50
75 100 125 150 175 200
o
o
T ,
J
unction Temperature
[
C
]
T ,
J
unction Temperature
[
C
]
J
J
Fig 9.
Max. Safe Operating Area
Fig 10.
Max. Drain Current vs. Case Temperature
30
Operation in This Area
is Limited by R
DS(on)
2
24
18
12
6
10
100
s
µ
1
m
s
10 ms
1
10
DC
@
N
otes :
0
1. T
= 25
o
C
10
C
2. T
= 175
o
C
J
3. Single Pulse
-1
0
10
0
1
2
25
50
75
100
125
150
175
10
10
10
o
T ,
C
ase Temperature
[
C
]
V
D
S
,
D
rain-Source Voltage
[V]
c
Fig 11.
Thermal Response
10
0
10
–
1
10
–
2
D=0.5
0.2
@ Notes :
1. Z
J
C
(t)=1.24
o
C/W Max.
θ
2. Duty Factor, D=t
1
/t
2
0.1
3. T
J
M
-T
C
=P
D
M
*Z
J
C
(t)
θ
0.05
P
DM
0.02
0.01
t
1
t
2
single pulse
10
–
5
10
–
4
10
–
3
10
–
2
10
–
1
10
0
10
1
t
1
, Square Wave Pulse Duration
[sec]
N-CHANNEL
POWER MOSFET
IRLM110A
Fig 12.
Gate Charge Test Circuit
& Waveform
* Current Regulator ”
V
GS
Same Type
as DUT
50K
Ω
Q
g
12V
200nF
10V
300nF
V
DS
Q
gs
Q
gd
V
GS
DUT
R
2
3mA
R
1
Charge
Current Sampling (I
G
) Current
Sampling (I
D
)
Resistor
Resistor
Fig 13.
Resistive Switching Test Circuit
& Waveforms
R
L
V
out
V
in
V
out
90%
V
DD
( 0.5 rated V
DS
)
R
G
DUT
10%
V
in
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14.
Unclamped Inductive Switching Test Circuit
& Waveforms
BV
DSS
——————–
BV
DSS
— V
DD
1
2
2
L
L
I
D
—-
E
AS
=
L
L
I
AS
V
DS
BV
DSS
I
AS
Vary t
p
to obtain
required peak I
D
R
G
I
D
(t)
C
V
DD
DUT
V
DD
V
DS
(t)
5V
t
p
t
p
Time
N-CHANNEL
POWER MOSFET
IRLM110A
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
+
DUT
V
DS
—
I
S
L
Driver
V
GS
Same Type
as DUT
R
G
V
DD
V
GS
• dv/dt controlled by
＂
R
G
＂
• I
S
controlled by Duty Factor
＂
D
＂
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
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not intended to be an exhaustive list of all such trademarks.
â
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STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOL
T
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DenseTrench™
DOME™
POP™
Power247™
PowerTrenc
h
â
QFET™
EcoSPARK™
E
2
CMOS
TM
TinyLogic™
QS™
EnSigna
TM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILEN
T
S
WITCHE
R
â
FACT™
FACT Quiet Series™
UltraFE
T
â
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILIT
Y
A
RISING OUT OF THE APPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICE
S
O
R
S
YSTEM
S
W
ITHOU
T
T
H
E
E
XPRES
S
W
RITTE
N
A
PPROVA
L
O
F
F
AIRCHIL
D
S
EMICONDUCTO
R
C
ORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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IRLM110A
100V N-Channel Logic Level A-FET
Contents
Features
|
Product status/pricing/packaging
Features
●
●
●
●
●
●
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.)
This page
Print version
Design tools
@ V
= 100V
DS
●
Lower R
: 0.336
Ω
(Typ.)
DS
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Product status/pricing/packaging
Product
Product status
Full Production
Pricing*
$0.311
Package type
Leads
Packing method
company
IRLM110ATF
SOT-223
3
TAPE REEL
* 1,000 piece Budgetary Pricing
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