onsemi-ISL9V3040P3
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DATA SHEET
ECOSPARK
ꢀ
Ignition IGBT
COLLECTOR
300 mJ, 400
V
, N
−
Channel Ignition IGBT
R
1
GATE
ISL9V3040D3S,
ISL9V3040S3S,
ISL9V3040P3
R
2
EMITTER
General Description
The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the
next generation ignition IGBTs that offer outstanding SCIS capability
in the space saving D
−
Pak (TO
−
252), as well as the industry standard
2
D
−
Pak (TO
−
263), and TO
−
262 and TO
−
220 plastic packages. This
device is intended for use in automotive ignition circuits, specifically
as a coil driver. Internal diodes provide voltage clamping without the
need for external components.
2
DPAK3
CASE 369AS
D PAK
−
3
CASE 418AJ
ECOS
P
A
RK devices can be custom made to specific clamp
voltages. Contact your nearest
onsemi
sales office for more
information.
Formerly Developmental Type 49362.
Features
•
Space Saving D
−
Pak Package Availability
TO
−
220
−
3LD
CASE 340AT
•
SCIS Energy = 300 mJ at T
= 25
°
C
J
•
Logic Level Gate Drive
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
These are Pb
−
Free Devices
MARKING DIAGRAMS
AYWW
XXX
XXXXXG
Applications
•
Automotive Ignition Coil Driver Circuits
•
Coil
−
On Plug Application
AYWWZZ
XXXXX
A
= Assembly Location
Y
=
Y
e
ar
WW
XXXX
ZZ
= Work Week
= Device Code
= Assembly Lot Number
= Pb
−
Free Package
G
ORDERING INFORMATION
of this data sheet.
©
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
November, 2021
−
Rev. 4
ISL9V3040P3/D
ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I
= 1 mA)
Rating
430
Unit
V
BV
CER
ECS
C
BV
Emitter to Collector Voltage
−
Reverse Battery Condition (I
= 10 mA)
24
V
C
E
At Starting T
= 25
°
C, I
= 14.2 A, L = 3.0 mHy
SCIS
300
mJ
mJ
A
SCIS25
J
E
At Starting T
= 150
°
C, I
= 10.6 A, L = 3.0 mHy
SCIS
170
SCIS150
J
I
Collector Current Continuous, At T
= 25
°
C, See Fig 9
21
C25
C
I
Collector Current Continuous, At T
= 110
°
C, See Fig 9
17
A
C110
C
V
GEM
Gate to Emitter Voltage Continuous
10
V
P
D
Power Dissipation
T
o
tal T
= 25
°
C
150
W
C
Power Dissipation Derating T
> 25
°
C
1.0
W/
°
C
°
C
°
C
°
C
°
C
kV
C
T
J
Operating Junction
T
e
mperature Range
−
40 to 175
−
40 to 175
300
T
STG
Storage Junction
T
e
mperature Range
T
L
Max Lead
T
e
mp for Soldering (Leads at 1.6 mm from Case for 10 s)
Max Lead
T
e
mp for Soldering (Package Body for 10 s)
Electrostatic Discharge Voltage at 100 p
F
,
1
500
W
T
pkg
260
ESD
4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Units
Thermal Resistance Junction Case
R
1.0
°
C/W
q
JC
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
OFF CHARACTERISTICS
BV
BV
BV
Collector to Emitter Breakdown
Voltage
I
= 2 mA, V
= 0
V
,
GE
G
370
390
30
400
430
450
−
V
CER
C
R
= 1 k
W
, See Figure 15
T =
−
40 to 150
°
C
J
Collector to Emitter Breakdown
Voltage
I
= 10 mA, V
G
= 0
V
,
420
V
V
CES
C
GE
R
= 0, See Figure 15
T =
−
40 to 150
°
C
J
Emitter to Collector Breakdown
Voltage
I
=
−
75 mA, V
= 0
V
,
GE
−
ECS
C
T
= 25
°
C
C
BV
I
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
=
2 mA
12
14
−
V
GES
GES
V
R
= 250 V
T
T
= 25
°
C
−
−
25
m
A
CER
CER
C
= 1 k
W
G
= 150
°
C
−
−
1
mA
mA
C
I
Emitter to Collector Leakage Current
V
= 24 V,
T
T
= 25
°
C
−
−
−
−
1
40
−
ECS
EC
C
= 150
°
C
C
R
R
Series Gate Resistance
−
70
−
W
W
1
2
Gate to Emitter Resistance
10K
26K
ON CHARACTERISTICS
V
V
V
Collector to Emitter Saturation
Voltage
I
= 6 A,
GE
T
= 25
°
C,
−
−
−
1.25
1.58
1.90
1.60
1.80
2.20
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
C
C
V
= 4 V
Collector to Emitter Saturation
Voltage
I
= 10 A,
T =
150
°
C,
C
T =
150
°
C
C
C
V
= 4.5 V
GE
Collector to Emitter Saturation
Voltage
I
= 15 A,
C
V
= 4.5 V
GE
2
ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
A
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
= 10 A, V
= 12
V
, V
= 5 V
−
17
−
nC
V
G(ON)
C
CE
GE
V
Gate to Emitter Threshold Voltage
I
= 1.0 mA
T
T
= 25
°
C
1.3
0.75
−
−
−
2.2
1.8
−
GE(TH)
C
C
V
= V
GE
CE
= 150
°
C
C
V
Gate to Emitter Plateau Voltage
V
= 12 V, I
= 10 A
3.0
V
GEP
CE
C
SWITCHING CHARACTERISTICS
t
Current Turn
−
On Delay
Time
−
Resistive
V
V
J
= 14
V
, R
= 1
W
,
−
0.7
4
m
s
d(ON)R
CE
GE
L
= 5
V
, R
= 1
k
W
,
G
t
rR
Current Rise Time
−
Resistive
−
−
2.1
4.8
7
td
Current Turn
−
Off Delay
Time
−
Inductive
V
CE
V
GE
= 300
V
, L =
5
00
m
H,
15
m
s
(OFF)L
= 5
V
, R
= 1
k
W
,
G
J
t
fL
Current Fall Time
−
Inductive
−
−
2.8
15
SCIS
Self Clamped Inductive Switching
T =
25
°
C, L = 3.0 mH,
−
300
mJ
J
V
GE
= 5
V
, R
= 1
k
W
,
G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3
TYPICAL CHARACTERISTICS
Figure 2. Self Clamped Inductive Switching
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Current vs. Inductance
Figure 3. Collector to Emitter On
−
State Voltage
Figure 4. Collector to Emitter On
−
State Voltage
vs. Junction Temperature
vs. Junction Temperature
Figure 5. Collector to Emitter On
−
State Voltage
Figure 6. Collector to Emitter On
−
State Voltage
vs. Collector Current
vs. Collector Current
4
ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3
TYPICAL CHARACTERISTICS
(continued)
Figure 7. Collector to Emitter On
−
State Voltage
Figure 8. Transfer Characteristics
vs. Collector Current
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
Figure 12. Switching Time vs. Junction
Temperature
Figure 11. Leakage Current vs. Junction
Temperature
5
ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3
TYPICAL CHARACTERISTICS
(continued)
Figure 13. Capacitance vs. Collector to Emitter Voltage
Figure 14. Gate Charge
Figure 15. Breakdown Voltage vs. Series Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
6
ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3
TEST CIRCUIT AND WAVEFORMS
Figure 17. Inductive Switching Test Circuit
Figure 18. t
ON
and t
OFF
Switching Test Circuit
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
7
ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Package
Shipping
ISL9V3040D3ST
DPAK
2500 Units/
T
a
pe & Reel
800 Units/
T
a
pe & Reel
50 Units/Tube
(Pb
−
Free)
ISL9V3040S3ST
ISL9V3040P3
D2PAK
(Pb
−
Free)
TO220
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or subsidiaries in the United States
and/or other countries.
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
220
−
3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO
−
220
−
3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO
−
252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO
−
252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
=
Y
e
ar
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb
−
Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D
2
PAK
−
3 (TO
−
263, 3
−
LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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For additional information, please contact your local Sales Representative
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