onsemi-J109
| Part # | onsemi-J109 |
Download  | onsemi-J109 |
N-Channel JFET
J109, MMBFJ108
Features
•
This Device is Designed for Digital Switching Applications where
V
e
ry Low On Resistance is Mandatory
•
Sourced from Process 58
•
These are Pb
−
Free Devices
A
Symbol
Parameter
Drain
−
Gate Voltage
Value
25
Unit
V
V
V
DG
GS
GF
Gate
−
Source Voltage
−
25
V
1
I
Forward Gate Current
10
mA
°
C
TO
−
92 3 4.825×4.76
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to 150
J
STG
CASE 135AN
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These
ratings are based on a maximum junction temperature of 150
°
C.
2. These
are steady
−
state limits. ON Semiconductor should be consulted on
applications involving pulsed or low
−
duty
−
cycle operations.
1
THERMAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
A
TO
−
92 3 4.83×4.76
LEADFORMED
CASE 135AR
Max
J109
MMBFJ108
Symbol
Parameter
Unit
mW
P
D
T
o
tal Device Dissipation
Derate Above 25
°
C
625
5.0
350
2.8
−
3
mW/
°
C
°
C/W
1
R
Thermal Resistance,
Junction
−
to
−
Case
125
q
JC
JA
2
SOT
−
23/SUPERSOT
t
−
23,
R
Thermal Resistance,
Junction
−
to
−
Ambient
200
357
°
C/W
q
3 LEAD, 1.4×2.9
CASE 527AG
3. PCB
size: FR
−
4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
1. Drain, 2. Source, 3. Gate
4. Device
mounted on FR
−
4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for
2
the collector lead minimum 6 cm
.
MARKING DIAGRAM
$Y&Z&3&K
J109
$Y&Z&3
J109
&Y
I8 &G
J109
J109
−
D26Z
MMBFJ108
J109, I8
= Specific Device Code
$Y
&Y
&G
&Z
&3
&K
= ON Semiconductor Logo
=
Y
ear Coding
= Weekly Date Code
= Assembly Plant Code
= Date Code Format
= Lot Run Traceability Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
December, 2020
−
Rev. 4
J109/D
J109, MMBFJ108
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Max
Unit
OFF CHARACTERISTICS
V
Gate
−
Source Breakdown Voltage
I
=
−
10
m
A, V
= 0
−
25
−
−
V
(BR)GSS
G
DS
I
Gate Reverse Current
V
V
V
=
−
15
V
, V
= 0
−
3.0
−
200
−
10.0
−
6.0
nA
GSS
GS
GS
DS
DS
=
−
15
V
, V
=
0
, T
= 100
°
C
−
DS
A
V
(off)
Gate
−
Source Cut
−
Off Voltage
= 15 V, I
= 10 nA
MMBFJ108
J109
−
3.0
−
2.0
V
GS
D
ON CHARACTERISTICS
I
V
V
= 15
V
, V
= 0
MMBFJ108
J109
80
40
−
−
−
mA
DSS
DS
GS
r
(on)
Drain
−
Source On Resistance
≤
0.1
V
, V
= 0
MMBFJ108
J109
8.0
12
W
DS
DS
GS
−
SMALL SIGNAL CHARACTERISTICS
C (on)
dg
C (off)
sg
Drain
−
Gate & Source
−
Gate On Capacitance
V
DS
= 0, V
= 0, f = 1.0 MHz
−
85
pF
GS
C (off)
dg
C (off)
sg
Drain
−
Gate Off Capacitance
Source
−
Gate Off Capacitance
V
V
= 0, V
=
−
10
V
, f =
1
.0 MHz
−
−
15
15
pF
pF
DS
GS
= 0, V
=
−
10
V
, f =
1
.0 MHz
DS
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse
test: pulse width
≤
300
m
s, duty cycle
≤
2%.
TYPICAL PERFORMANCE CHARACTERISTICS
300
V
= 10 mV
GS
Unit with Typical
V
= 500 mV
= 1.0 V
GS
V
(off) =
−
7.8 V
GS
V
V
V
V
T
A
= 25
°
C
GS
GS
GS
GS
250
200
150
100
50
= 1.5 V
= 2.0 V
= 2.5 V
= 3.0 V
V
GS
V
= 3.5 V
= 4.0 V
= 4.5 V
GS
V
GS
GS
V
V
= 5.0 V
GS
V
= 5.5 V
GS
V
= 6.5 V
GS
V
V
= 6.0 V
= 7.0 V
GS
GS
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 1. Common Drain
−
Source, MMBFJ108
2
J109, MMBFJ108
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
200
180
160
140
120
100
80
V
=
−
0.01 V
GS
−
0.5 V
−
1.0 V
−
1.5 V
−
2.0 V
−
2.5 V
−
3.5 V
60
40
Unit with Typical
VGS(off) =
−
4.8 V
20
T
A
= 25
°
C
0
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 2. Common Drain
−
Source,MMBFJ108, J109
250
200
150
100
50
Unit with Typical
VGS(off) =
−
2.9 V
T
A
= 25
°
C
V
=
−
0.1 V
GS
−
0.5 V
−
1.0 V
−
1.5 V
−
2.0 V
3
0
0
1
2
4
5
6
7
8
9
10
11
12
13
14
15
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 3. Common Drain
−
Source, J109
3
J109, MMBFJ108
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
1000
100
10
1
V
V
V
= 0 PULSED
= 5 V
V
I
V
= 100 mV
= 100 mA
GS
GS
DS
D
@ V
= 15
V
, I
=
1
0 nA
@ V
= 15
V
, I
=
1
0 nA
GS(off)
DS
D
GS(off)
DS
D
100
10
−
1
−
1
−
10
100
25
−
10
V
, GATE CUTOFF VOLTAGE (V)
V
, GATE CUTOFF VOLTAGE (V)
GS(off)
GS(off)
Figure 4. Drain ON Resistance
Figure 5. Drain Current vs.
Gate
−
Source Cut
−
Off Voltage
100
50
10
8
V
= 10 V
T =
25
°
C
A
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
V
V
= 1.5 V
=
−
12 V
DD
= 0.21 @ f
≥
1.0 kHz
GS
6
I
D
= 30 mA
10
5
4
I
D
= 10 mA
I
D
= 1.0 mA
I
= 10 mA
D
2
1
0
0.01
0.03
0.1
0.5
1
2
10
0
−
2
−
4
−
6
−
8
−
10
f, FREQUENCY (Hz)
V
GS(off)
, GATE CUTOFF VOLTAGE (V)
Figure 6. Noise Voltage vs. Frequency
Figure 7. Switching Turn
−
On Time vs.
Gate
−
Source Cut
−
Off Voltage
100
50
40
30
20
10
0
VGS = 0 V
V
V
=
−
8.5 V
=
−
5.5 V
GS(off)
GS(off)
T
A
= 125
°
C
25
°
C
VGS(off) =
−
2.9 V
V
=
−
3.5 V
10
GS(off)
−
55
°
C
VGS(off) =
−
4.0 V
T
= 25
°
C
= 1.5 V
=
−
12 V
A
V
V
DD
GS
1
1
10
100
0
5
10
15
20
I ,
DRAIN CURRENT (mA)
D
I ,
DRAIN CURRENT (mA)
D
Figure 8. Switching Turn
−
On Time vs. Drain Current
Figure 9. On Resistance vs. Drain Current
4
J109, MMBFJ108
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
1000
100
10
100
T
= 25
°
C
T
= 25
°
C
A
A
f = 1.0 kHz
V
V
f = 1.0 kHz
VGS(off) =
−
4.0 V
= 10 V
GS
GS(off)
=
−
3.0 V @ V
= 15
V
, I
=
1
0 nA
DS
D
10
1
0,1
1
0,1
1
10
0,1
1
10
I ,
DRAIN CURRENT (mA)
D
I ,
DRAIN CURRENT (mA)
D
Figure 10. Output Conductance vs. Drain Current
Figure 11. Output Conductance vs. Drain Current
700
600
TO
−
92
500
SUPERSOT
−
3
400
300
200
100
0
0
20
40
60
80
100
120
140
160
T,
A
MBIENT TEMPERATURE (
°
C)
Figure 12. Power Dissipation vs. Ambient Temperature
ORDERING INFORMATION
†
Part Number
Top Mark
Package
Shipping
J109
J109
TO
−
92 3L
(Pb
−
Free)
10000 Units / Bulk
2000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
J109
−
D26Z
J109
I8
TO
−
92 3L
(Pb
−
Free)
MMBFJ108
SSOT 3L
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
92 3 4.825×4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO
−
92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
92 3 4.83×4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO
−
92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23/SUPERSOT
t
−
23, 3 LEAD, 1.4×2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX =
Specific Device Code
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXM
G
G
= Pb
−
Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT
−
23/SUPERSOT
−
23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi’s
product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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