onsemi-J270

Part #onsemi-J270
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onsemi-J270
J270  
P-Channel Switch  
•
This device is designed for low level analog switching sample and hold  
circuits and chopper stabilized amplifiers.  
•
Sourced from process 88.  
TO-92  
1. Drain
 
2. Gate
 
3. Source  
1
Absolute Maximum Ratings*

T =25
°
C unless otherwise noted  

a
Symbol  
Parameter  
Ratings  
-30  
Units  
V
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
V
V
DG  
GS  
30  
I
50  
mA  
°
C  
GF  
T , T  
Operating and Storage Junction
T
e
mperature Range  
-55 ~ 150  
J
STG  
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These
 
rating are based on a maximum junction temperature of 150 degrees C.  
2) These
 
are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics

T =25
°
C unless otherwise noted  

a
Symbol  
Parameter  
Test Condition  
Min.  
30  
Max.  
Units  
Off Characteristics  
V
Gate-Source Breakdwon Voltage  
Gate Reverse Current  
I
= -1.0
µ
A, V
 
= 0  
V
pA  
V
(BR)GSS  
GSS  
G
DS  
I
V
V
= -20
V
, V
 
= 0  
200  
2.0  
GS  
DS  
DS  
V
Gate-Source Cutoff Voltage  
= -15
V
, I
 
=
1
.0nA  
0.5  
GS(off)  
D
On Characteristics  
Zero-Gate Voltage Drain Current *  
Small Signal Characteristics  
I
V
= -15
V
, V
 
= 0  
-2.0  
6000  
-15  
mA  
DSS  
DS  
GS  
gfs  
Forward Transferconductance  
Common- Source Output Conductance  
V
V
= 0
V
, V
 
=
1
5
V
, f =
1
.0kHz  
15000  
200  
µ
mhos  
µ
mhos  
GS  
GS  
DS  
goss  
= 0
V
, V
 
=
1
5
V
, f =
1
.0kHz  
DS  
Thermal Characteristics

T =25
°
C unless otherwise noted  

A
Symbol  
Parameter  
Max.  
Units  
mW  
mW/
°
C  
P
T
o
tal Device Dissipation  
350  
2.8  
D
Derate above 25
°
C  
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
125  
357  
°
C/W  
θ
JC  
θ
JA  
°
C/W  
©2003 Fairchild Semiconductor Corporation  
Rev. A, July 2003  

Package Dimensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46
±
0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27
±
0.20  
]
[1.27
±
0.20
]  
3.60
±
0.20  
(R2.29)  
Dimensions in Millimeters  
©2003 Fairchild Semiconductor Corporation  
Rev. A, July 2003  

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As used herein:  
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or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2003 Fairchild Semiconductor Corporation  
Rev. I3