onsemi-KSA1013OTA
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October 2014
KSA1013
PNP Epitaxial Silicon Transistor
Features
• Color
TV Audio Output
• Color
TV Vertical Deflection Output
TO-92L
1. Emitter
2. Collector 3. Base
1
Ordering Information
Part Number
KSA1013YBU
KSA1013OBU
KSA1013YTA
KSA1013OTA
Top Mark
Package
Packing Method
Bulk
A1013
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-160
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-160
V
-6
V
-1
A
I
B
Base Current
-0.5
A
T
J
Junction
T
e
mperature
Storage
T
e
mperature
150
°
C
°
C
T
STG
-55 to +150
© 2002 Fairchild Semiconductor Corporation
KSA1013 Rev. 1.1.1
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Parameter
Value
900
Unit
mW
Power Dissipation
Derate Above T
A
= 25°C
7.2
mW/°C
°
C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
139
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
I
CBO
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
Conditions
V
CB
= -150
V
, I
E
= 0
V
EB
= -6 V, I
C
= 0
Min.
Typ.
Max.
-1
Unit
μ
A
μ
A
V
I
EBO
-1
BV
CEO
h
FE
Collector-Emitter Breakdown Voltage
I
C
= -10 mA, I
B
= 0
DC Current Gain
V
CE
= -5
V
, I
C
= -200 mA
-160
60
320
-1.5
V
CE
(sat) Collector-Emitter
Saturation Voltage
I
C
= -500 mA, I
B
= -50 mA
V
V
V
BE
(on)
f
T
Base-Emitter On Voltage
V
CE
=- 5 V, I
C
= -5 mA
-0.45
15
-0.75
Current Gain Bandwidth Product
V
CE
= -5
V
, I
C
= -200 mA
50
MHz
V
CB
= -10
V
,
I
E
= 0,
f = 1 MHz
C
ob
Output Capacitance
35
pF
h
FE
Classification
Classification
R
O
Y
h
FE
60 ~ 120
100 ~ 200
160 ~ 320
© 2002 Fairchild Semiconductor Corporation
KSA1013 Rev. 1.1.1
2
Typical Performance Characteristics
-1.0
1000
100
10
EMITTER COMMON
EMITTER COMMON
Ta=25
o
C
I
B
= -12mA
I
B
= -10mA
Ta=25
o
C
I
B
= -15mA
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
I
B
= -8mA
V
CE
= -10V
V
CE
= -5V
I
B
= -6mA
I
B
= -4.5mA
V
CE
= -2V
I
B
= -3mA
I
B
= -2mA
I
B
= -1mA
1
-10
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1000
100
10
-10
EMITTER COMMON
Ta=25
o
C
EMITTER COMMON
—–V
CE
=-10V
– – -V
CE
= -5V
-1
I
C
/I
B
=10
-0.1
-0.01
I
C
/I
B
=5
-10
-100
-1000
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
100
EMITTER COMMON
V
CE
=-5V
10
1
-0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-10
-100
V
BE
(sat)[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
KSA1013 Rev. 1.1.1
3
Typical Performance Characteristics
(Continued)
1000
-10
-1
EMITTER COMMON
Ta=25
o
C
I
C
MAX. (PULSE)
100
V
CE
=-5V
-0.1
V
CE
=-2V
10
-0.01
-1E-3
1
-1
-10
-100
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 8. Safe Operating Area
Figure7. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
KSA1013 Rev. 1.1.1
4
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Datasheet contains the design specifications for product development. Specifications may change
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The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
