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KSA1142  

Audio Frequency Power Amplifier  

High Freqency Power Amplifier  

•

Complement to KSC2682  

TO-126  

1. Emitter

 

2.Collector 3.Base  

1

PNP Epitaxial Silicon Transistor  

Absolute Maximum Ratings

T =25

°

C unless otherwise noted  

C

Symbol  

Parameter  

Ratings  

– 180  

– 180  

– 5  

Units  

V

V

V

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

CBO  

V

CEO  

EBO  

V

I

– 100  

1.2  

mA  

W

C

P

P

Collector Dissipation (T =25

°

C)  

a

C

Collector Dissipation (T

 

=25

°

C)  

8

W

C

C

T

T

Junction

T

e

mperature  

Storage

T

e

mperature  

150  

°

C  

°

C  

J

– 55 ~ 150  

STG  

Electrical Characteristics

T =25

°

C unless otherwise noted  

C

Symbol  

Parameter  

Collector Cut-off Current  

Emitter Cut-off Current  

* DC Current Gain  

Test Condition  

Min.  

Typ.  

Max.  

Units  

µ

A  

I

I

V

V

= – 180V, I

 

= 0  

– 1  

– 1  

CBO  

EBO  

CB  

EB  

E

= – 3

V

, I

 

= 0  

µ

A  

C

h

h

V

V

= – 5

V

, I

 

= –

1

mA  

90  

100  

200  

200  

FE1  

FE2  

CE  

CE  

C

= – 5

V

, I

 

= –

1

0mA  

320  

– 0.5  

– 1.5  

C

V

V

(sat)  

(sat)  

* Collector-Emitter Saturation Voltage  

* Base-Emitter Saturation Voltage  

Current Gain Bandwidth Product  

Output Capacitance  

I

I

= – 50mA, I

 

= – 5mA  

– 0.16  

– 0.8  

180  

4.5  

V

V

CE  

C

C

B

= – 50mA, I

 

= – 5mA  

BE  

B

f

V

V

V

= – 10

V

, I

 

= –

2

0mA  

MHz  

pF  

T

CE  

CB  

CE  

C

C

= – 10

V

, I

 

=

0

, f=1MHz  

7

ob  

E

NF  

Noise Figure  

= – 10

V

, I

 

= –

1

mA  

4

dB  

C

R

= 10k

Ω

, f = 1MHz  

S

* Pulse Test: PW

≤

350

µ

s, Duty Cycle

≤

2% Pulsed  

h

Classification  

FE  

Classification  

O

Y

h

100 ~ 200  

160 ~ 320  

FE2  

©2000 Fairchild Semiconductor International  

Rev. A, February 2000  

Typical Characteristics  

-160  

-140  

1000  

100  

10  

Pulse Test  

V

CE

= -5V  

Pulse Test  

-120  

I

B

= -500

㎂

I

B

= -450

㎂  

I

B

= -400

㎂  

-100  

I

B

= -350

㎂  

-80  

-60  

-40  

I

B

= -100

㎂  

-20  

I

B

= -50

㎂  

I

B

= 0  

0

1

-0.1  

0

-20  

-40  

-60  

-80  

-100  

-120  

-140  

-160  

-1  

-10  

-100  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

I

C

[A], COLLECTOR CURRENT  

Figure 1. Static Characteristic  

Figure 2. DC current Gain  

100  

-10  

I

C

= 10 I

B  

Pulse Test  

f=1.0MHz  

I

E

=0(C

OB  

I

E

=0(C

IB  

)

)

C

ib  

V

BE

(sat)  

-1  

10  

-0.1  

V

CE

(sat)  

C

ob  

1

-0.01  

0.1  

-1  

-10  

-100  

-1000  

1

10  

100  

V

CB

(v), COLLECTOR-BASE VOLTAGE  

V

CB

(v), EMITTER-BASE VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

Figure 3. Base-Emitter Saturation Voltage  

Collector-Emitter Saturation Voltage  

Figure 4. Collector Output Capacitance  

1000  

-1000  

V

CE

= -10V  

I

C

(DC) Max.  

10ms  

-100  

-10  

-1  

100  

10  

-1  

-10  

-100  

-1  

-10  

-100  

-1000  

I

C

[mA], COLLECTOR CURRENT  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 5. Current Gain Bandwidth Product  

Figure 6. Safe Operating Area  

©2000 Fairchild Semiconductor International  

Rev. A, February 2000  

Typical Characteristic

s

(Continued)  

160  

140  

120  

100  

80  

10  

8

6

4

60  

40  

2

20  

0

0

0

50  

100  

150  

200  

0

50  

100  

150  

200  

250  

T

C

[

o

C], CASE TEMPERATURE  

T

C

[

o

C], CASE TEMPERATURE  

Figure 7. Derating Curve of Safe Operating Areas  

Figure 8. Power Derating  

©2000 Fairchild Semiconductor International  

Rev. A, February 2000  

8.30  

7.70  

3.45  

3.05  

4.00  

3.80  

11.20  

10.80  

14.20 MAX  

3.20  

1.35  

1.95  

1.55  

1.70  

1.50  

1.00  

E

D

0.85  

3X  

0.65  

#1  

0.60  

0.45  

M

3X  

0.254  

2.29  

TOP VIEW  

3°  

SIDE VIEW  

PRODUCTION  

CODE  

TERMINAL  

LENGTH “D”  

TERMINAL  

LENGTH “E”  

TSSTU  

TSTU  

NONE  

(STD LENGTH)  

3.45 – 4.05  

2.36 – 2.96  

6.45-7.45  

5.36-6.36  

FRONT VIEW  

12.76 – 13.36  

15.76-16.76  

NOTES:  

A. NO

 

INDUSTRY STANDARD APPLIES TO THIS  

PACKAGE  

B. ALL

 

DIMENSIONS ARE IN MILLIMETERS  

C. DIMENSIONS

 

ARE EXCLUSIVE OF BURRS, MOLD  

FLASH, AND TIE BAR PROTRUSIONS  

D

FOR TERMINAL LENGTH “D”, REFER TO TABLE  

FOR TERMINAL LENGTH “E”, REFER TO TABLE  

E

F. DRAWING

 

FILENAME: MKT-TO126AArev2  

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

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claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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