onsemi-KSA1625KTA
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KSA1625
High Voltage Switch
•
•
High Breakdown Voltage
High Speed Switching
TO-92
1. Emitter
2. Collector
3. Base
1
PNP Silicon Transistor
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
a
Symbol
Parameter
Ratings
-400
-400
-7
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
CBO
V
CEO
EBO
V
I
I
I
-0.25
-0.5
A
B
Collector Current (DC)
Collector Current (Pulse)
A
C
-1.0
A
CP
P
P
Collector Power Dissipation (T =25
°
C)
0.75
2
W
W
°
C
°
C
C
a
Collector Power Dissipation (T
=25
°
C)
C
C
T
T
Junction
T
e
mperature
Storage
T
e
mperature
150
J
-55 ~ 150
STG
Electrical Characteristics
T =25
°
C unless otherwise noted
a
Symbol
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Dc Current Gain
Test Condition
Min.
Max.
Units
BV
I =
-1mA, I
=0
-400
V
CEO
CBO
EBO
C
B
I
I
V
= -400
V
, I
=0
-1
-1
µ
A
µ
A
CB
EB
CE
E
V
V
= -5
V
, I
=
0
C
h
= -5
V
, I
=
–
50mA
40
10
200
-1
FE
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I =
-100mA, I
= -10mA
V
V
CE
C
B
I =
-100mA, I
= -10mA
-1.2
BE
C
B
f
V
= -10
V
, I
=
–
10mA
MHz
pF
µ
s
T
CE
CB
C
C
V
= -10
V
,
f
=1MHz
25
1
ob
t
t
t
Turn On Time
I =
-100mA, R
=1.5k
Ω
ON
C
L
I
=- I
= -10mA
Storage Time
B1
B2
5
µ
s
STG
F
V
= -150V
CC
Fall Time
1
µ
s
h
Classification
FE
Classification
M
L
K
h
40 ~ 80
60 ~ 120
100 ~ 200
FE
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
Typical Characteristics
-0.5
-0.4
-0.3
-0.2
-0.1
1000
100
10
V
CE
= – 5V
I
B
=-140mA
I
B
=-120mA
I
B
=-100mA
I
B
=-80mA
I
B
=-60mA
I
B
=-40mA
I
B
=-20mA
1
-0.1
-1
-10
-100
-1000
-0
-2
-4
-6
-8
-10
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
1000
100
10
I
C
= – 10 I
B
f=1.0MHz
-1
V
BE
(sat)
V
CE
(sat)
-0.1
-0.01
-0.1
1
-0.1
-1
-10
-100
-1000
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
1000
-10
V
CE
= -10V
Ta=25
o
C
Single Pulse
I
C
MAX(Pulse)
-1
100
10
1
DC
-0.1
-0.01
-0.001
-1
-10
-100
-1000
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
Package Demensions
TO-92
+0.25
–0.15
4.58
0.46
±
0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27
±
0.20
]
[1.27
±
0.20
]
3.60
±
0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
VCX™
ACEx™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
SMART START™
SPM™
Stealth™
Bottomless™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
POP™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
HiSeC™
Power247™
I
2
C™
PowerTrench
®
QFET™
ISOPLANAR™
LittleFET™
MicroFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
FACT Quiet series™
MicroPak™
FAST
®
MICROWIRE™
UltraFET
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H7
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KSA1625
PNP Silicon Transistor
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Features
High Voltage Switch
●
●
High Breakdown Voltage
High Speed Switching
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Product
KSA1625KTA
KSA1625KBU
Product status
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Full Production
Full Production
$0.153
$0.109
3
3
TO-92
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
