onsemi-KSA643YTA

September 2015  

KSA643  

PNP Epitaxial Silicon Transistor  

Features  

• Low

 

Frequency Power Amplifier  

• Collector

 

Power Dissipation : P

C

= 500 mW  

• Complement

 

to KSD261  

TO-92  

1. Emitter  

2. Base  

3. Collector  

• Suffix

 

“-C” means Center Collector (1. Emitter 2. Collector 3. Base)  

• Non

 

Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)  

1

1

2

2

3

3

Straight Lead  

Bulk Packing  

Bent Lead  

Tape & Reel  

Ammo Packing  

Ordering Information  

Part Number  

Top Mark  

Package  

TO-92 3L  

Packing Method  

Ammo  

KSA643YTA  

A643  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

-40  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current (DC)  

-20  

V

-5  

V

-500  

mA  

mA  

°

C  

°

C  

I

CP  

Collector Current (Pulse)

(1)  

Junction

T

e

mperature  

Storage

T

e

mperature  

-700  

T

J  

150  

T

STG  

-55 to 150  

Note:  

1. PW

≤

10 ms, duty cycle

≤

50%  

© 2001 Fairchild Semiconductor Corporation  

KSA643 Rev. 1.3  

Thermal Characteristics

(2)  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

P

C  

Parameter  

Value  

500  

Unit  

mW  

Collector Power Dissipation  

R

θ

JA  

Thermal Resistance, Junction-to-Ambient  

250  

°

C/W  

Note:  

2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

Parameter  

Conditions  

Min.  

-40  

-20  

-5  

Typ.  

Max.  

Unit  

V

Collector-Base Breakdown Voltage  

I

C

= -100

μ

A, I

E

= 0  

Collector-Emitter Breakdown Voltage

 

I

C

= -10 mA, I

B

= 0  

V

Emitter-Base Breakdown Voltage  

Collector Cut-Off Current  

Emitter Cut-Off Current  

DC Current Gain

(3)  

Collector-Emitter Saturation Voltage

(3)

I

C

= -500 A, I

B

= -50 mA  

Base-Emitter Saturation Voltage

(3)  

I

E

= -10

μ

A, I

C

= 0  

V

CB

= -25 V, I

E

= 0  

V

EB

= -3 V, I

C

= 0  

V

-200  

-200  

400  

-0.4  

-1.3  

nA  

nA  

I

EBO  

h

FE  

V

CE

= -1

V

,

I

C

= -100 mA  

40  

V

CE

(sat)  

V

BE

(sat)  

-0.3  

-1.0  

V

V

I

C

= -500 A, I

B

= -50 mA  

Note:  

3. Pulse

T

e

st: PW

≤

350

μ

s, duty cycle

≤

2%  

h

FE

Classification  

Classification  

R

O

Y

G

h

FE  

40 ~ 80  

70 ~ 140  

120 ~ 240  

200 ~ 400  

© 2001 Fairchild Semiconductor Corporation  

KSA643 Rev. 1.3  

2

Typical Performance Characteristics  

-500  

1000  

100  

10  

V

CE

= -1V  

-450  

I

B

= -1.6mA  

-400  

I

B

= -1.4mA  

-350  

I

B

= -1.2mA  

I

B

= -1.0mA  

I

B

= -0.8mA  

-300  

-250  

-200  

-150  

-100  

-50  

I

B

= -0.6mA  

I

B

= -0.4mA  

I

B

= -0.2mA  

0

0

-2  

-4  

-6  

-8  

-10  

-12  

-14  

-16  

-18  

-20  

-1  

-10  

-100  

-1000  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

Figure 1. Static Characteristic  

Figure 2. DC Current Gain  

-1000  

-100  

-10  

-10  

V

CE

= -1V  

I

C

= 10 I

B  

V

BE

(sat)  

-1  

-0.1  

V

CE

(sat)  

-1  

0.0  

-0.01  

-0.2  

-0.4  

-0.6  

-0.8  

-1.0  

-1.2  

-1  

-10  

-100  

-1000  

V

BE

[V], BASE-EMITTER VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

Figure 3. Base-Emitter Saturation Voltage and  

Collector-Emitter Saturation Voltage  

Figure 4. Base-Emitter On Voltage  

100  

I

E

= 0  

f = 100KHz  

10  

1

-1  

-10  

V

CB

[V], COLLECTOR-BASE VOLTAGE  

Figure 5. Collector Output Capacitance  

© 2001 Fairchild Semiconductor Corporation  

KSA643 Rev. 1.3  

3

Physical Dimensions  

Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type  

© 2001 Fairchild Semiconductor Corporation  

KSA643 Rev. 1.3  

4

TRADEMARKS  

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  

intended to be an exhaustive list of all such trademarks.  

OPTOPLANAR

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Saving our world, 1mW/W/kW at a time™  

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SPM

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Ultra FRFET

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* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  

DISCLAIMER  

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  

RELIABILITY, FUNCTION, OR DESIGN. T

O OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR  

WEBSITE AT

HTTP://WWW.FAIRCHILDSEMI.COM.

FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF  

ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF  

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WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.  

AUTHORIZED USE  

Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary  

levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive  

or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product  

reasonably would be expected to result in personal injury, death or property damage. Customer’s use of this product is subject to agreement of this Authorized Use  

policy. In the event of an unauthorized use of Fairchild’s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be  

subject to Fairchild’s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties.  

ANTI-COUNTERFEITING POLICY  

under Terms of Use  

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their  

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed  

applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect oursel

v

e

s and our customers from the  

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild  

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PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Datasheet contains the design specifications for product development. Specifications may change  

in any manner without notice.  

Advance Information  

Formative / In Design  

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  

Semiconductor reserves the right to make changes at any time without notice to improve design.  

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make  

changes at any time without notice to improve the design.  

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  

The datasheet is for reference information only.  

Preliminary  

No Identification Needed  

Obsolete  

First Production  

Full Production  

Not In Production  

Rev. I77  

© Fairchild Semiconductor Corporation