onsemi-KSB596YTU

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KSB596  
Power Amplifier Applications  
•
Complement to KSD526  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings

T =25
°
C unless otherwise noted  

C
Symbol  
Parameter  
Value  
– 80  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
– 80  
V
CEO  
EBO  
– 5  
V
I
– 4  
A
C
I
– 0.4  
30  
A
B
P
Collector Dissipation (T
 
=25
°
C)  
W
°
C  
°
C  
C
C
T
T
Junction
T
e
mperature  
Storage
T
e
mperature  
150  
J
– 55 ~ 150  
STG  
Electrical Characteristics

T =25
°
C unless otherwise noted  

C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
– 80  
– 5  
Typ.  
Max.  
Units  
BV  
I
I
= – 50mA, I
 
= 0  
V
V
CEO  
EBO  
C
E
B
BV  
= – 10mA, I
 
= 0  
C
I
I
V
V
= – 80
V
, I
 
= 0  
– 70  
– 100  
240  
µ
A  
µ
A  
CBO  
EBO  
CB  
EB  
E
= – 5
V
, I
 
= 0  
C
h
h
DC Current Gain  
V
V
= – 5
V
, I
 
= –
0
.5A  
40  
15  
FE1  
FE2  
CE  
CE  
C
= – 5
V
, I
 
= –
3
A  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
I
= – 3A, I
 
= – 0.3A  
– 1  
– 1  
– 1.7  
– 1.5  
V
V
CE  
C
B
V
V
V
= – 5
V
, I
 
= –
3
A  
C
BE  
CE  
CE  
CB  
f
Current Gain Bandwidth Product  
Output Capacitance  
= – 5
V
, I
 
= –
0
.5A  
3
MHz  
pF  
T
C
C
= – 10
V
, I
 
= 0  
130  
ob  
E
f = 1MHz  
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

Typical Characteristics  
-4.0  
1000  
100  
10  
V

CE

= -5V  
I

B

= -140mA  
I

B

= -160mA  
-3.2  
-2.4  
-1.6  
-0.8  
0
I

B

= -180mA  
I

B

= -60mA  
I

B

= -40mA  
I

B

= -20mA  
I

B

= 0mA  
1
-1  
-2  
-3  
-4  
-5  
-0.001  
-0.01  
-0.1  
-1  
-10  
V

CE

[V], COLLECTOR-EMITTER VOLTAGE  
I

C

[A], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
-10  
-4  
-3  
-2  
-1  
0
V

CE

= -5V  
I

C

= 10 I

B  

-1  
-0.1  
-0.01  
-0.001  
-0.01  
-0.1  
-1  
-10  
-0.4  
-0.8  
-1.2  
-1.6  
V

BE

[V], BASE-EMITTER VOLTAGE  
I

C

[A], COLLECTOR CURRENT  
Figure 3. Base-Emitter Saturation Voltage  
Figure 4. Collector-Emitter Saturation Voltage  
-10  
-200  
V

CE

= -5V  
Ic Max(Pulse)  
-160  
-120  
-80  
-40  
0
Ic Max(Continuous)  
-1  
-0.1  
-1  
-10  
-100  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
V

CE

[V], COLLECTOR-EMITTER VOLTAGE  
V

BE

[V], BASE-EMITTER VOLTAGE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Safe Operating Area  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

Typical Characteristics

(Continued)  

40  
35  
30  
25  
20  
15  
10  
5
0
25  
50  
75  
100  
125  
150  
175  
200  
T

C

[

o

C], CASE TEMPERATURE  
Figure 1. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

SUPPLIER “B” PACKAGE  
SHAPE  
‘ꢀꢁꢂꢂ  
3.50  
10.67  
9.65  
SUPPLIER “A” PACKAGE  
SHAPE  
E
3.40  
2.50  
16.30  
13.90  
IF PRESENT, SEE NOTE “D”  
E
16.51  
15.42  
9.40  
8.13  
E
1
2
3
4.10  
2.70  
[2.46]  
C
14.04  
12.70  
2.13  
2.06  
FRONT VIEWS  
H
4.70  
4.00  
1.62  
1.42  
1.62  
1.10  
2.67  
2.40  
“A1”  
8.65  
7.59  
1.00  
0.55  
SEE NOTE “F”  
ꢃƒ  
ꢄƒ  
ꢃƒ  
ꢄƒ  
6.69  
6.06  
OPTIONAL  
CHAMFER  
E
14.30  
11.50  
NOTE “I”  
BOTTOM VIEW  
NOTES:  
A) REFERENCE
 
JEDEC, TO-220, VARIATION AB  
B) ALL
 
DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS
 
COMMON TO ALL PACKAGE  
SUPPLIERS EXCEPT WHERE NOTED [
 
].  
D) LOCATION
 
OF MOLDED FEATURE MAY VARY  
(LOWER LEFT CORNER, LOWER CENTER  
AND CENTER OF THE PACKAGE)  
3
2
1
E DOES
 
NOT COMPLY JEDEC STANDARD VALUE.  
F) “A1” DIMENSIONS AS BELOW:  
SINGLE GAUGE = 0.51 – 0.61  
DUAL GAUGE
 
= 1.10 – 1.45  
G) DRAWING
 
FILE NAME: TO220B03REV9  
H
PRESENCE IS SUPPLIER DEPENDENT  
I) SUPPLIER
 
DEPENDENT MOLD LOCKING HOLES  
IN HEATSINK.  
0.60  
0.36  
2.85  
2.10  
BACK VIEW  
SIDE VIEW  

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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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