onsemi-KSB798GTF

Part #onsemi-KSB798GTF
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onsemi-KSB798GTF
July 2005  
KSB798  
PNP Epitaxial Silicon Transistor  
Audio Frequency Power Amplifier  
•
•
Collector Current : I

C

= -1A  
Collector Power Dissipation : P

C

= 2W  
Marking  
7 9  
P Y  
8
W W  
SOT-89  
1
Weekly code  
Y
e
ar code  
h

FE

grage  
1. Base
 
2. Collector
 
3. Emitter  
Absolute Maximum Ratings
 
T

a

= 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
-30  
Units  
V

CBO  

Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
V
V

CEO  

V

EBO  

I

C  

-25  
V
-5  
V
-1.0  
A
I

CP  

Collector Current (Pulse) *  
Collector Power Dissipation  
Junction
T
e
mperature  
-1.5  
A
P

C  

2.0  
W
°
C  
°
C  
T

J  

150  
T

STG  

Storage
T
e
mperature  
-55 ~ 150  
* PW
≤
10ms, Duty cycle
≤
50%  
Electrical Characteristics
T

a

= 25
°
C unless otherwise noted  
Symbol  
BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
I

C

= -100
µ
A, I

E

= 0  
-30  
-25  
-5  
V
I

C

= -1mA, I

B

= 0  
I

E

= -100
µ
A, I

C

= 0  
V

CB

= -30
V
,
I

E

= 0  
V

EB

= -5
V
,
I

C

= 0  
V

CE

= -1
V
,
I

C

= -0.1A  
V
V
-0.1  
-0.1  
400  
µ
A  
µ
A  
I

EBO  

Emitter Cut-off Current  
h

FE1  

h

FE2  

DC Current Gain  
90  
50  
V

CE

= -1
V
,
I

C

= -1.0A  
V

CE

(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I

C

= -1.0A, I

B

= -0.1A  
I

C

= -1.0A, I

B

= -0.1A  
V

CE

= -6
V
,
I

C

= -10mA  
V

CE

= -6
V
,
I

C

= -10mA  
-0.4  
-1.2  
-0.7  
V
V
V
V

BE

(sat)  

BE

(on)  
-0.6  
V
f

T  

Current Gain Bandwidth Product  
Output Capacitance  
110  
18  
MHz  
pF  
C

ob  

V

CB

= -6
V
,
I

E

= 0, f = 1MHz  
©2005 Fairchild Semiconductor Corporation  
KSB798 Rev. B1  
1

h

FE

Classification  
Classification  
O
Y
G
h

FE1  

90 ~ 180  
135 ~ 270  
200 ~ 400  
Package Marking and Ordering Information  
Device Marking  
Device  
KSB798  
Package  
SOT-89  
Reel Size  
Tape Width  
Quantity  
4,000  
798  
13”  
—  
2
KSB798 Rev. B1  

Typical Performance Characteristics  
Figure 1. Static Characteristic  
Figure 2. DC Current Gain  
-1.0  
-0.9  
-0.8  
-0.7  
1000  
V

CE

= -1V  
I

B

= -8mA  
I

B

= -7mA  
I

B

= -6mA  
I

B

= -5mA  
100  
10  
1
-0.6  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
0.0  
I

B

= -4mA  
I

B

= -3mA  
I

B

= -2mA  
I

B

= -1mA  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
-10  
-100  
-1000  
I

C

[mA], COLLECTOR CURRENT  
V

CE

[V], COLLECTOR-EMITTER VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Figure 4. Collector Output Capacitance  
Collector-Emitter Saturation Voltage  
100  
-10  
I

C

= 10 I

B  

f = 1MHz  
I

E

=0  
-1  
V

BE

(sat)  
V

CE

(sat)  
10  
-0.1  
-0.01  
1
-1  
-10  
-100  
-1  
-10  
-100  
-1000  
V

CB

[V], COLLECTOR-BASE VOLTAGE  
I

C

[mA], COLLECTOR CURRENT  
Figure 5. Current Gain Bandwidth Product  
Figure 6. Safe Operating Area  
-10  
V

CE

= -6V  
1.T

C

=25

o

C  
2.Single pulse  
100  
-1  
-0.1  
-0.01  
10  
1
-1  
-10  
-100  
10  
100  
V

CE

[V], COLLECTOR-EMITTER VOLTAGE  
I

C

[mA], COLLECTOR CURRENT  
3
KSB798 Rev. B1  

Mechanical Dimensions  
SOT-89  
1.50
0.20  
4.50
0.20  
1.65
0.10  
(0.40)  
C0.2  
0.50
0.10  
0.40
0.10  
+0.10  
–0.05  
0.40  
1.50 TYP
 
1.50 TYP  
Dimensions in Millimeters  
4
KSB798 Rev. B1  

TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to  
be an exhaustive list of all such trademarks.  
ACEx™  
FAST

®  

ISOPLANAR™  
LittleFET™  
PowerSaver™  
PowerTrench

®  

QFET

®  

SuperSOT™-8  
SyncFET™  
TinyLogic

®  

TINYOPTO™  
TruTranslation™  
UHC™  
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
FASTr™  
FPS™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
FRFET™  
GlobalOptoisolator™  
GTO™  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µ
SerDes™  
CROSSVOLT
™  
DOME™  
HiSeC™  
UltraFET

®  

UniFET™  
EcoSPARK™  
E

2

CMOS™  
EnSigna™  
I

2

C™  
MSXPro™  
i-Lo
™  
OCX™  
VCX™  
Wire™  
ImpliedDisconnect™  
IntelliMAX™  
OCXPro™  
SILENT SWITCHER

®  

SMART START™  
SPM™  
FACT™  
OPTOLOGIC

®  

OPTOPLANAR™  
PACMAN™  
POP™  
FACT Quiet Series™  
Stealth™  
Across the board. Around the world.™  
SuperFET™  
The Power Franchise

®  

Power247™  
PowerEdge™  
SuperSOT™-3  
SuperSOT™-6  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY  
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT  
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support  
or sustain life, or (c) whose failure to perform when properly used  
in accordance with instructions for use provided in the labeling,  
can be reasonably expected to result in significant injury to the  
user.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I16  
5
KSB798 Rev. B1  

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PNP Epitaxial Silicon Transistor  
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•
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z
z
Collector Current : I
 
= -1A  
C
Collector Power Dissipation : P
 
= 2W  
e-mail this datasheet  
C
back to top  
This page  
Print version  
Applications  
Audio Frequency Power Amplifier  
back to top  
Product status/pricing/packaging  
Product  
Product status  
Pb-free Status  
Pricing*  
Package type  
Leads  
Packing method  
Package Marking Convention**  
KSB798GTF  
Full Production  
$0.128  
SOT-89  
3
TAPE REEL  
Line 1: 798 Line 2: G&3  
KSB798YTF  
Full Production  
$0.128  
SOT-89  
3
TAPE REEL  
Line 1: 798 Line 2: Y&3  
* Fairchild 1,000 piece Budgetary Pricing  
** A sample button will appear if the part is available through Fairchild’s on-line samples program. If there is no sample button, please  

contact a
Fairchild distributor
to obtain samples  
Indicates product with Pb-free second-level interconnect. For more information
click here.  
Package marking information for product KSB798 is available.
Click here for more information
.  
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Qualification Support  
Click on a product for detailed qualification data  
Product  
KSB798GTF  
KSB798YTF  
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