onsemi-KSB834YTU

KSB834  

Low Frequency Power Amplifier  

•

Complement to KSD880  

TO-220  

1.Base 2.Collector 3.Emitter  

1

PNP Silicon Epitaxial Transistor  

Absolute Maximum Ratings

T =25

°

C unless otherwise noted  

C

Symbol  

Parameter  

Value  

– 60  

Units  

V

V

V

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

CBO  

– 60  

V

CEO  

EBO  

– 7  

V

I

– 3  

A

C

I

Base Current  

– 0.5  

30  

A

B

P

Collector Dissipation (T

 

=25

°

C)  

W

W

°

C  

°

C  

C

C

P

T

T

Collector Dissipation (T =25

°

C)  

1.5  

C

a

Junction

T

e

mperature  

Storage

T

e

mperature  

150  

J

– 55 ~ 150  

STG  

Electrical Characteristics

T =25

°

C unless otherwise noted  

C

Symbol  

Parameter  

Collector Cut-off Current  

Emitter Cut-off Current  

Test Condition  

Min.  

Typ.  

Max.  

– 100  

– 100  

Units  

I

V

V

= – 60

V

, I

 

= 0  

µ

A  

µ

A  

V

CBO  

EBO  

CB  

E

I

= – 7

V

, I

 

= 0  

C

EB  

BV  

Collector-Emitter Breakdown Voltage  

DC Current Gain  

I

= – 50mA, I

 

= 0  

– 60  

CEO  

C

B

h

h

V

V

= – 5

V

, I

 

= –

0

.5A  

60  

20  

200  

FE1  

FE2  

CE  

CE  

C

= – 5

V

, I

 

= –

3

A  

C

V

V

(sat)  

(on)  

Collector-Emitter Saturation Voltage  

Base-Emitter ON Voltage  

I

= – 3A, I

 

= – 0.3A  

– 0.5  

– 0.7  

9

– 1  

– 1  

V

V

CE  

C

B

V

V

V

= – 5

V

, I

 

= –

0

.5A  

C

BE  

CE  

CE  

CB  

f

Current Gain Bandwidth Product  

Output Capacitance  

= – 5

V

, I

 

= –

0

.5A  

MHz  

pF  

T

C

C

= – 10

V

, I

 

= 0  

150  

ob  

E

f = 1MHz  

t

Turn ON Time  

Storage Time  

Fall Time  

V

= -30V, I

 

= – 1A  

0.4  

1.7  

0.5  

µ

s  

µ

s  

µ

s  

ON  

CC  

C

I

= – I

 

= – 0.2A  

T

B1  

B2  

STG  

R =

 

30

Ω  

L

t

F

h

Classification  

FE  

Classification  

O

Y

h

60 ~ 120  

100 ~ 200  

FE1  

©2001 Fairchild Semiconductor Corporation  

Rev. A1, June 2001  

Typical Characteristics  

-5.0  

1000  

100  

10  

EMITTER COMMON  

EMITTER COMMON  

V

CE

=-5V  

-4.5  

-4.0  

-3.5  

-3.0  

-2.5  

-2.0  

-1.5  

-1.0  

-0.5  

-0.0  

TC=25

℃

 

I

B

=-60mA  

I

B

=-50mA  

I

B

=-40mA  

I

B

=-30mA  

I

B

=-20mA  

I

B

=-10mA  

1

-0.0  

-0.5  

-1.0  

-1.5  

-2.0  

-2.5  

-3.0  

-3.5  

-4.0  

-4.5  

-5.0  

-0.01  

-0.1  

-1  

V

CE

(V), COLLECTOR-EMITTER VOLTAGE  

I

C

(A), COLLECTOR CURRENT  

Figure 1. Static Characteristic  

Figure 2. DC current Gain  

-4.0  

-3.5  

-3.0  

-2.5  

-2.0  

-1.5  

-1.0  

-0.5  

-0.0  

-10  

EMITTER COMMON  

I

C

/I

B

=10  

EMITTER COMMON  

V

-1  

-0.1  

-0.01  

-0.01  

-0.0  

-0.2  

-0.4  

-0.6  

-0.8  

-1.0  

-1.2  

-1.4  

-1.6  

-0.1  

-1  

I

C

(A), COLLECTOR CURRENT  

V

BE

(V) BASE-EMITTER VOLTAGE  

Figure 3. Collector-Emitter Saturation Voltage  

Figure 4. Base-Emitter On Voltage  

-10  

40  

35  

30  

25  

20  

15  

10  

5

I

C

MAX. (Pulse)  

I

C

MAX. (Continous)  

-1  

-0.1  

0

-1  

-10  

-100  

0

25  

50  

75  

100  

125  

150  

175  

℃

T

C

( ),

 

CASE TEMPERATURE  

V

CE

(V), COLLECTOR-EMITTER VOLTAGE  

Figure 5. Safe Operating Area  

Figure 6. Power Derating  

©2001 Fairchild Semiconductor Corporation  

Rev. A1, June 2001  

Package Demensions  

TO-220  

4.50

±

0.20  

9.90

±

0.20  

(8.70)  

+0.10  

1.30  

–0.05  

ø3.60

±

0.10  

(45  

°

)

1.27

±

0.10  

1.52

±

0.10  

0.80

±

0.10  

+0.10  

–0.05  

0.50  

2.40

±

0.20  

2.54TYP  

2.54TYP  

[2.54

±

0.20  

]

[2.54

±

0.20

]  

10.00

±

0.20  

Dimensions in Millimeters  

©2001 Fairchild Semiconductor Corporation  

Rev. A1, June 2001  

TRADEMARKS  

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  

intended to be an exhaustive list of all such trademarks.  

FAST

®  

FASTr™  

FRFET™  

GlobalOptoisolator™  

GTO™  

OPTOPLANAR™  

PACMAN™  

POP™  

STAR*POWER™  

Stealth™  

A

CEx™  

Bottomless™  

CoolFET™  

CROSSVOLT

™  

DenseTrench™  

DOME™  

EcoSPARK™  

E

2

CMOS™  

EnSigna™  

SuperSOT™-3  

SuperSOT™-6  

SuperSOT™-8  

SyncFET™  

TruTranslation™  

TinyLogic™  

UHC™  

Power247™  

PowerTrench

®  

QFET™  

HiSeC™  

ISOPLANAR™  

LittleFET™  

MicroFET™  

MICROWIRE™  

OPTOLOGIC™  

QS™  

QT Optoelectronics™  

Quiet Series™  

SLIENT SWITCHER

®  

SMART START™  

UltraFET

®  

VCX™  

FACT™  

FACT Quiet Series™  

STAR*POWER is used under license  

DISCLAIMER  

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  

LIFE SUPPORT POLICY  

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  

CORPORATION.  

As used herein:  

1. Life support devices or systems are devices or systems  

which, (a) are intended for surgical implant into the body,  

or (b) support or sustain life, or (c) whose failure to perform  

when properly used in accordance with instructions for use  

provided in the labeling, can be reasonably expected to  

result in significant injury to the user.  

2. A critical component is any component of a life support  

device or system whose failure to perform can be  

reasonably expected to cause the failure of the life support  

device or system, or to affect its safety or effectiveness.  

PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Advance Information  

Formative or In  

Design  

This datasheet contains the design specifications for  

product development. Specifications may change in  

any manner without notice.  

Preliminary  

First Production  

This datasheet contains preliminary data, and  

supplementary data will be published at a later date.  

Fairchild Semiconductor reserves the right to make  

changes at any time without notice in order to improve  

design.  

No Identification Needed  

Obsolete  

Full Production  

This datasheet contains final specifications. Fairchild  

Semiconductor reserves the right to make changes at  

any time without notice in order to improve design.  

Not In Production  

This datasheet contains specifications on a product  

that has been discontinued by Fairchild semiconductor.  

The datasheet is printed for reference information only.  

©2001 Fairchild Semiconductor Corporation  

Rev. H3  

SEARCH |

Parametric

|

Cross Reference  

sp  

GO  

space  

Product Folders and  

Applica  

sp

a

s

pa  

Home

>>

Find products

>>  

sp

a

s

pa  

KSB834  

PNP Epitaxial Silicon Transistor  

Contents  

Features

|

Product status/pricing/packaging  

Features  

LOW Frequency Power Amplifier  

●

Complement to KSD880  

Print version  

Design tools  

back to top  

Product status/pricing/packaging  

Product  

KSB834Y  

Product status  

Pricing*  

Package type  

TO-220  

Leads  

Packing method  

BULK  

Full Production  

Full Production  

Full Production  

Full Production  

$0.363  

$0.363  

$0.363  

$0.363  

3

3

3

3

KSB834OTU  

KSB834YTU  

KSB834O  

TO-220  

RAIL  

TO-220  

RAIL  

TO-220  

BULK  

company  

* 1,000 piece Budgetary Pricing  

back to top  

|  

Support

|

Company

|

Contact us

|

Site index

|

Privacy policy  

© Copyright 2002 Fairchild Semiconductor