onsemi-KSC1009YTA-ON

September 2015  

KSC1009  

NPN Epitaxial Silicon Transistor  

Features  

• High

 

Voltage Amplifier  

• High

 

Collector-Base Voltage : V

CBO

= 160 V  

• Collector

 

Current : I

C

= 700 mA  

TO-92  

1. Emitter  

2. Base  

3. Collector  

• Collector

 

Power Dissipation : P

C

= 800 mW  

• Complement

 

to KSA709  

1

1

2

• Suffix

 

“-C” means Center Collector (1. Emitter 2. Collector 3. Base)  

• Non

 

Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)  

2

3

3

Straight Lead  

Bulk Packing  

Bent Lead  

Tape & Reel  

Ammo Packing  

Ordering Information  

Part Number  

Top Mark  

Package  

TO-92 3L  

Packing Method  

Ammo  

KSC1009YTA  

C1009

Y

–  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

160  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

140  

V

8

V

700  

mA  

°

C  

°

C  

T

J  

Junction

T

e

mperature  

Storage

T

e

mperature  

150  

T

STG  

-55 to 150  

© 2001 Fairchild Semiconductor Corporation  

KSC1009 Rev. 1.3  

Thermal Characteristics

(1)  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

P

C  

Parameter  

Value  

800  

Unit  

mW  

Collector Power Dissipation  

R

θ

JA  

Thermal Resistance, Junction-to-Ambient  

150  

°

C/W  

Note:  

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

Parameter  

Conditions  

Min.  

160  

140  

8

Typ.  

Max.  

Unit  

V

Collector-Base Breakdown Voltage  

I

C

= 100

μ

A, I

E

= 0  

Collector-Emitter Breakdown Voltage

 

I

C

= 10 mA, I

B

= 0  

V

Emitter-Base Breakdown Voltage  

Collector Cut-Off Current  

I

E

= 10

μ

A, I

C

= 0  

V

V

CB

= 60 V, I

E

= 0  

0.1  

0.1  

μ

A  

μ

A  

I

EBO  

Emitter Cut-Off Current  

V

EB

= 5

V

, I

C

= 0  

h

FE  

DC Current Gain  

V

CE

= 2 V,

I

C

= 50 mA  

I

C

= 200 mA, I

B

= 20 mA  

I

C

= 200 mA, I

B

= 20 mA  

40  

30  

400  

0.7  

V

CE

(sat)  

V

BE

(sat)  

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

0.2  

V

V

0.86  

1.00  

f

T  

Current Gain Bandwidth Product  

50  

MHz  

V

CE

= 10

V

,

I

C

= 50 mA  

V

CB

= 10

V

,

I

E

= 0,  

f = 1 MHz  

C

ob  

Output Capacitance  

8

pF  

h

FE

Classification  

Classification  

R

O

Y

G

h

FE  

40 ~ 80  

70 ~ 140  

120 ~ 240  

200 ~ 400  

© 2001 Fairchild Semiconductor Corporation  

KSC1009 Rev. 1.3  

2

Typical Performance Characteristics  

100  

1000  

100  

10  

I

B

=0.8mA  

V

CE

= 5V  

90  

I

B

=0.6mA  

80  

I

B

=0.4mA  

70  

60  

50  

40  

30  

I

B

=0.2mA  

20  

10  

0

1

0

2

4

6

8

10  

1

10  

100  

1000  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

Figure 1. Static Characteristic  

Figure 2. DC Current Gain  

1000  

100  

10  

10  

V

CE

=2V  

I

C

=10I

B  

V

BE

(sat)  

1

V

CE

(sat)  

0.1  

1

0.0  

0.01  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1

10  

100  

1000  

V

BE

[V], BASE-EMITTER VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

Figure 3. Base-Emitter Saturation Voltage and  

Collector-Emitter Saturation Voltage  

Figure 4. Base-Emitter On Voltage  

100  

f=1MHz  

I

E

=0  

10  

1

1

10  

100  

V

CB

[V], COLLECTOR-BASE VOLTAGE  

Figure 5. Collector Output Capacitance  

© 2001 Fairchild Semiconductor Corporation  

KSC1009 Rev. 1.3  

3

Physical Dimensions  

Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type  

© 2001 Fairchild Semiconductor Corporation  

KSC1009 Rev. 1.3  

4

TRADEMARKS  

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  

intended to be an exhaustive list of all such trademarks.  

OPTOPLANAR

®  

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¥

 

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®

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*  

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®  

QS

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Making Small Speakers Sound Louder  

and Better™  

MegaBuck

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TRUECURRENT

®

*  

P

SerDes

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Saving our world, 1mW/W/kW at a time™  

SignalWise

¥  

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ESBC

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MicroPak

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SMART START

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Solutions for Your Success

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SPM

®  

®

UHC

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MicroPak2

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MillerDrive

¥  

MotionMax

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MotionGrid

®  

Ultra FRFET

¥  

UniFET

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VCX

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VisualMax

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¥  

XS™  

Fairchild

®  

Fairchild Semiconductor

®  

FACT Quiet Series

¥  

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STEALTH

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SuperFET

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MTi

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SuperSOT

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MTx

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FastvCore

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FETBench

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SyncFET

¥  

Sync-Lock™  

OPTOLOGIC

®  

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  

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RELIABILITY, FUNCTION, OR DESIGN. T

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AUTHORIZED USE  

Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary  

levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive  

or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product  

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under Terms of Use  

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their  

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v

e

s and our customers from the  

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PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Datasheet contains the design specifications for product development. Specifications may change  

in any manner without notice.  

Advance Information  

Formative / In Design  

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  

Semiconductor reserves the right to make changes at any time without notice to improve design.  

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make  

changes at any time without notice to improve the design.  

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  

The datasheet is for reference information only.  

Preliminary  

No Identification Needed  

Obsolete  

First Production  

Full Production  

Not In Production  

Rev. I77  

© Fairchild Semiconductor Corporation