onsemi-KSC1845PTA

February 2015  

KSC1845  

NPN Epitaxial Silicon Transistor  

Features  

• Audio

 

Frequency Low-Noise Amplifier  

• Complement

 

to KSA992  

TO-92  

1

1. Emitter

 

2. Collector

 

3. Base  

Ordering Information  

Part Number  

KSC1845PBU  

KSC1845PTA  

KSC1845FBU  

KSC1845FTA  

KSC1845EBU  

KSC1845ETA  

Top Mark  

C1845  

C1845  

C1845  

C1845  

C1845  

C1845  

Package  

TO-92 3L  

TO-92 3L  

TO-92 3L  

TO-92 3L  

TO-92 3L  

TO-92 3L  

Packing Method  

Bulk  

Ammo  

Bulk  

Ammo  

Bulk  

Ammo  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

120  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

120  

V

5

V

50  

mA  

mA  

°

C  

°

C  

I

B  

Base Current  

10  

T

J  

Junction

T

e

mperature  

Storage

T

e

mperature  

150  

T

STG  

-55 to 150  

© 2002 Fairchild Semiconductor Corporation  

KSC1845 Rev. 1.5  

Thermal Characteristics

(1)  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

P

D  

Parameter  

Value  

500  

4

Unit  

mW  

Power Dissipation  

Derate Above 25

°

C  

mW/

°

C  

°

C/W  

R

θ

JA  

Thermal Resistance, Junction-to-Ambient  

250  

Note:  

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

Parameter  

Conditions  

Min.  

120  

120  

5

Typ.  

Max.  

Unit  

V

Collector-Base Breakdown Voltage  

I

C

= 100

μ

A, I

E

= 0  

Collector-Emitter Breakdown Voltage

 

I

C

= 1 mA, I

B

= 0  

V

Emitter-Base Breakdown Voltage  

Collector Cut-Off Current  

Emitter Cut-Off Current  

DC Current Gain  

I

E

= 100

μ

A, I

C

= 0  

V

CB

= 120

V

, I

E

= 0  

V

EB

= 5

V

, I

C

= 0  

V

50  

50  

nA  

nA  

I

EBO  

h

FE1  

V

CE

= 6 V, I

C

= 0.1 mA  

V

CE

= 6 V, I

C

= 1 mA  

V

CE

= 6 V, I

C

= 1 mA  

150  

200  

0.55  

580  

600  

h

FE2  

DC Current Gain  

1200  

0.65  

0.30  

V

BE

(on)  

V

CE

(sat)  

Base-Emitter On Voltage  

0.59  

0.07  

V

V

Collector-Emitter Saturation Voltage

 

I

C

= 10 mA, I

B

= 1 mA  

f

T  

Current Gain Bandwidth Product  

50  

110  

MHz  

V

CE

= 6 V, I

C

= 1 mA  

V

C

ob  

Output Capacitance  

1.6  

2.5  

40  

pF  

f = 1 MHz  

V

CE

= 5.0

V

,

I

C

= 1.0 mA,  

R

G

= 100k

Ω

, G

V

= 80 dB,  

f = 10 Hz to 1.0 kHz  

NL  

Noise Level  

25  

mV  

h

FE

Classification  

Classification  

P

F

E

U

h

FE2  

200 ~ 400  

300 ~ 600  

400 ~ 800  

600 ~ 1200  

© 2002 Fairchild Semiconductor Corporation  

KSC1845 Rev. 1.5  

2

Typical Performance Characteristics  

10  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

I

B

=16

μ

A  

I

B

=1.4

μ

A  

I

B

=1.2

μ

A  

I

B

=14

μ

A  

I

B

=1.0

μ

A  

I

B

=0.8

μ

A  

8

I

B

=12

μ

A  

I

B

=10

μ

A  

6

I

B

=0.6

μ

A  

I

B

=8

μ

A  

I

B

=0.4

μ

A  

I

B

=0.2

μ

A  

4

I

B

=6

μ

A  

I

B

=4

μ

A  

2

I

B

=2

μ

A  

0

0

1

2

3

4

5

0

20  

40  

60  

80  

100  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 1. Static Characteristic  

Figure 2. Static Characteristic  

1000  

900  

800  

700  

600  

500  

400  

300  

200  

100  

0

100  

10  

V

CE

= 6V  

I

C

=10I

B  

Pule Test  

Pulse Test  

V

BE

(sat)  

1

0.1  

0.01  

V

CE

(sat)  

0.01  

0.1  

1

10  

100  

0.1  

1

10  

100  

I

C

[mA], COLLECTOR CURRENT  

I

C

[mA], COLLECTOR CURRENT  

Figure 3. DC Current Gain  

Figure 4. Base-Emitter Saturation Voltage and  

Collector-Emitter Saturation Voltage  

10  

10k  

f=1MHz  

I

E

=0  

V

CE

=6V  

1k  

100  

10  

1

0.1  

1

10  

100  

0.1  

1

10  

100  

V

CB

[V], COLLECTOR-BASE VOLTAGE  

I

E

[mA], EMITTER CURRENT  

Figure 5. Collector Output Capacitance  

Figure 6. Current Gain Bandwidth Product  

© 2002 Fairchild Semiconductor Corporation  

KSC1845 Rev. 1.5  

3

Typical Performance Characteristics

(Continued)  

100  

800  

700  

600  

500  

400  

300  

200  

100  

0

V

CE

= 6V  

Pulse Test  

10  

1

0.1  

0.01  

0.4  

0.5  

0.6  

0.7  

0.8  

0.9  

0

25  

50  

75  

100  

125  

150  

175  

V

BE

[V], BASE-EMITTER VOLTAGE  

T

a

[

o

C], CASE TEMPERATURE  

Figure 7. Collector Current vs. Base-Emitter Voltage  

Figure 8. Power Derating  

© 2002 Fairchild Semiconductor Corporation  

KSC1845 Rev. 1.5  

4

Physical Dimensions  

D

Figure 9. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type  

© 2002 Fairchild Semiconductor Corporation  

KSC1845 Rev. 1.5  

5

Physical Dimensions

(Continued)  

Figure 10. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type  

© 2002 Fairchild Semiconductor Corporation  

KSC1845 Rev. 1.5  

6

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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  

intended to be an exhaustive list of all such trademarks.  

OPTOPLANAR

®  

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¥

 

AttitudeEngine™  

Awinda

®  

F-PFS

¥  

®*  

FRFET

®  

Global Power Resource

SM  

GreenBridge

¥  

Green FPS

¥  

Green FPS

¥

e-Series

¥  

G

max

¥  

TinyBoost

®  

TinyBuck

®  

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¥  

TinyLogic

®  

TINYOPTO

¥  

TinyPower

¥  

TinyPWM

¥  

TinyWire

¥  

TranSiC

¥  

®

AX-CAP

®

*  

PowerTrench

®  

PowerXS™  

Programmable Active Droop

¥  

QFET

®  

BitSiC

¥  

Build it Now

¥  

CorePLUS

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¥  

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CTL

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GTO

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Making Small Speakers Sound Louder  

and Better™  

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¥  

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MicroFET

¥  

Current Transfer Logic

¥  

DEUXPEED

®  

Dual Cool™  

EcoSPARK

®  

EfficientMax

¥  

TriFault Detect

¥  

TRUECURRENT

®

*  

μ

SerDes

¥  

Saving our world, 1mW/W/kW at a time™  

SignalWise

¥  

SmartMax

¥  

SMART START

¥  

Solutions for Your Success

¥  

SPM

®  

ESBC

¥  

MicroPak

¥  

®

UHC

®  

MicroPak2

¥  

MillerDrive

¥  

MotionMax

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MotionGrid

®  

Ultra FRFET

¥  

UniFET

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VCX

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VisualMax

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XS™  

Fairchild

®  

STEALTH

¥  

Fairchild Semiconductor

®  

FACT Quiet Series

¥  

FACT

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SuperFET

®  

SuperSOT

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MTi

®  

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SupreMOS

®  

MTx

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FAST

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MVN

®  

FastvCore

¥  

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®  

Xsens™  

SyncFET

¥  

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OptoHiT

¥  

௝❺  

™

OPTOLOGIC

®  

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2. A

 

critical component in any component of a life support, device, or  

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Definition of Terms  

Datasheet Identification  

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Definition  

Datasheet contains the design specifications for product development. Specifications may change  

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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  

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First Production  

Full Production  

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Rev. I73  

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