onsemi-KSC2316OTA

Part #onsemi-KSC2316OTA
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onsemi-KSC2316OTA
KSC2316  
Audio Power Amplifier Applications  
•
•
Driver Stage Amplifier  
Complement to KSA916  
TO-92L  
1. Emitter
 
2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings

T =25
°
C unless otherwise noted  

a
Symbol  
Parameter  
Ratings  
120  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
120  
CEO  
EBO  
5
V
I
800  
mA  
mW  
°
C  
°
C  
C
P
Collector Power Dissipation  
Junction
T
e
mperature  
Storage
T
e
mperature  
900  
C
T
T
150  
J
-55 ~ +150  
STG  
Electrical Characteristics

T =25
°
C unless otherwise noted  

a
Symbol  
Parameter  
T
e
st Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =1mA,
 
I =0  
120  
120  
5
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =10mA,
 
I =0  
C B  
I =1mA,
 
I =0  
V
E
C
I
V
=120
V
, I
 
=
0  
0.1  
µ
A  
CBO  
CB  
E
h
h
DC Current Gain  
V
V
=5
V
, I
 
=
10mA  
60  
80  
FE1  
FE2  
CE  
CE  
C
=5
V
, I
 
=
100mA  
240  
1
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Collector Output Capacitance  
I =500mA,
 
I =50mA  
V
CE  
C
B
f
V
=5
V
, I
 
=
100mA  
120  
MHz  
pF  
T
CE  
CB  
C
C
V
=10
V
,
I =0,
 
f=1MHz  
30  
ob  
E
h
Classification  
FE  
Classification  
O
Y
h
80-160  
120-240  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, September 2002  

Typical Characteristics  
1000  
1000  
100  
10  
V

CE

= 5V  
I

B

= 15mA  
I

B

= 10mA  
800  
600  
400  
200  
0
I

B

= 7mA  
I

B

= 5mA  
I

B

= 4mA  
I

B

= 3mA  
I

B

= 2mA  
I

B

= 1mA  
I

B

= 0  
1
10  
100  
1000  
0
2
4
6
8
10  
12  
V

CE

[V], COLLECTOR-EMITTER VOLTAGE  
I

C

[mA], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
10000  
1000  
100  
10  
V

CE

= 5V  
I

C

= 10 I

B  

1
0.1  
1
0.0  
0.01  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1
10  
100  
1000  
V

BE

[V], BASE-EMITTER VOLTAGE  
I

C

[mA], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
10000  
*Single Pulse  
1000  
100  
10  
1
10  
100  
V

CE

[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Safe Operating Area  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, September 2002  

Package Dimensions  
TO-92L  
4.90
±
0.20  
0.70MAX.  
0.80
±
0.10  
1.00MAX.  
0.50
±
0.10  
1.27TYP  
[1.27
±
0.20  
]
0.45
±
0.10  
2.54 TYP  
3.90
±
0.20  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, September 2002  

TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT™  
ImpliedDisconnect™ PACMAN™  
SPM™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT
™ FRFET™  
DOME™  
FACT Quiet series™
 
ISOPLANAR™  
POP™  
Stealth™  
FAST

®  

LittleFET™  
MicroFET™  
MicroPak™  
Power247™  
PowerTrench

®  

QFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
FASTr™  
GlobalOptoisolator™ MICROWIRE™  
QS™  
EcoSPARK™  
E

2

CMOS™  
EnSigna™  
Across the board. Around the world.™  
The Power Franchise™  
GTO™  
HiSeC™  
I

2

C™  
MSX™  
MSXPro™  
OCX™  
OCXPro™  
OPTOLOGIC

®  

OPTOPLANAR™  
QT Optoelectronics™
 
TinyLogic™  
Quiet Series™  
TruTranslation™  
RapidConfigure™  
RapidConnect™  
UHC™  
UltraFET

®  

SILENT SWITCHER

®

VCX™  
SMART START™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2002 Fairchild Semiconductor Corporation  
Rev. I1