onsemi-KSC2383OTA

Part #onsemi-KSC2383OTA
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onsemi-KSC2383OTA
NPN Epitaxial Silicon  
Transistor  
KSC2383  
ABSOLUTE MAXIMUM RATINGS  
(Values are at T
 
= 25
°
C unless otherwise noted.)  
A
Symbol  
Parameter  
Collector
−
Base Voltage  
Collector
−
Emitter Voltage  
Emitter
−
Base Voltage  
Collector Current  
Value  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
160  
160  
V
6
V
I
C
1
0.5  
A
I
B
Base Current  
A
TO
−
92 3 LF  
CASE 135AM  
T
Junction
T
e
mperature  
Storage
T
e
mperature  
150  
°
C  
°
C  
J
T
−
55 to +150  
STG  
MARKING DIAGRAM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
AC2  
383X  
YWW  
(Values are at T
 
= 25
°
C unless otherwise noted.) (Note 1)  
A
Symbol  
Parameter  
Power Dissipation  
Value  
900  
7.2  
Unit  
mW  
P
D
Derate Above 25
_
C  
mW/
°
C  
°
C/W  
R
Thermal Resistance,  
138  
θ
JA  
Junction
−
to
−
Ambient  
1. PCB
 
size: FR
−
4, 76 mm
×
1
1
4 mm
×
1.57 mm (3.0 inch
×
4.5 inch
×
0.062 inch)  
with minimum land pattern size.  
1: Emitter  
2: Collector  
3: Base  
1
2
3
A
= Assembly Code  
= Device Code  
= O / Y  
C2383  
X
YWW  
= Date Code  
ORDERING INFORMATION  
Device  
Package  
Shipping  
KSC2383OTA  
TO
−
92 3 LF  
(Pb
−
Free)  
2000 /  
Fan
−
Fold  
KSC2383YTA  
TO
−
92 3 LF  
(Pb
−
Free)  
2000 /  
Fan
−
Fold  
©
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
March, 2021
−
Rev. 3  
KSC2383/D  

KSC2383  
ELECTRICAL CHARACTERISTICS  
(Values are at T
 
= 25
°
C unless otherwise noted.)  
A
Symbol  
Parameter  
Collector Cut
−
Off Current  
Emitter Cut
−
Off Current  
Conditions  
= 150
V
, I
 
= 0  
Min.  
−
Typ.  
−
Max.  
1
Unit  
m
A  
m
A  
V
I
V
V
CBO  
CB  
E
I
= 6
V
, I
 
= 0  
−
−
1
EBO  
EB  
C
BV  
h
Collector
−
Emitter Breakdown Voltage  
DC Current Gain  
I
C
= 10 mA, I
 
= 0  
160  
60  
−
−
−
CEO  
B
V
CE  
= 5
V
, I
 
= 200 mA  
−
320  
1.5  
0.75  
−
FE  
C
V
CE  
(sat)  
Collector
−
Emitter Saturation Voltage  
Base
−
Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
C
= 500 mA, I
 
= 50 mA  
−
V
V
B
V
BE  
(on)  
V
CE  
V
CE  
V
CB  
= 5
V
, I
 
= 5 mA  
0.45  
20  
−
−
C
f
T
= 5
V
, I
 
= 200 mA  
100  
−
MHz  
pF  
C
C
= 10 V, I
 
= 0, f = 1 MHz  
20  
ob  
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
h

FE

CLASSIFICATION  
Classification  
R
O
Y
h
FE  
60 ~ 120  
100 ~ 200  
160 ~ 320  
TYPICAL PERFORMANCE CHARACTERISTICS  
1000  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Emitter Common  
T =
 
25
°
C  
Emitter Common  
A
V
CE  
= 10 V  
I
B
= 15 mA  
I
B
= 10 mA  
100  
10  
1
I
B
= 6 mA  
V
CE  
= 5 V  
I
B
= 4 mA  
I
B
= 3 mA  
I
B
= 2.5 mA  
I
= 2 mA  
B
I
= 1.5 mA  
B
I
= 1 mA  
= 0.5 mA  
B
I
B
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
10  
100  
1000  
V
CE  
, Collector
−
Emitter Voltage (V)  
I ,
 
Controller Current (mA)  
C
Figure 1. Static Characteristic  
Figure 2. DC Current Gain  
1000  
100  
1
Emitter Common  
T =
 
25
°
C  
Emitter Common  
T =
 
25
°
C  
A
A
0.1  
I
I
/ I
 
= 10  
B
C
V
V
= 10 V  
= 5 V  
CE  
/ I
 
= 5  
B
C
0.01  
CE  
V
CE  
= 1 V  
10  
0.001  
1
10  
100  
1000  
100  
1000  
I ,
 
Controller Current (mA)  
C
I ,
 
Controller Current (mA)  
C
Figure 3. DC Current Gain  
Figure 4. Collector
−
Emitter Saturation Voltage  
2

KSC2383  
TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1000  
Emitter Common  
Emitter Common  
f = 1 MHz  
T =
 
25
°
C  
A
I
C
/ I
 
= 10  
B
100  
10  
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1
10  
100  
1000  
V
BE  
, Base
−
Emitter Voltage (V)  
V
CB  
, Collector Base Voltage (V)  
Figure 5. Base
−
Emitter On Voltage  
Figure 6. Collector Output Capacitance  
1000  
100  
10  
10  
1
Emitter Common  
T =
 
25
°
C  
I
Max. (Pulse)  
1 ms  
C
A
10 ms  
100 ms  
0.1  
I
Max. = 1 A  
C
DC T
 
= 25
°
C  
A
0.01  
1
0.001  
1
10  
100  
1000  
1
10  
100  
1000  
V
CE  
, Collector
−
Emitter Voltage (V)  
I ,
 
Collector Current (A)  
C
Figure 7. Current Gain Bandwidth Product  
Figure 8. Safe Operating Area  
3

MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO
−
92 3 8.0×4.9 (LEADFORMED)  
CASE 135AM  
ISSUE B  
DATE 14 JAN 2021  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions
 
are uncontrolled
 
except when stamped
 
“CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON14058G  
TO
−
92 3 8.0X4.9 (LEADFORMED)  
PAGE 1 OF 1  
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−
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