onsemi-KSC2883YTF
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November 2006
KSC2883
tm
NPN Epitaxial Silicon Transistor
Low Frequency Power Amplifier
•
•
•
3W Output Application
Collector Dissipation : P
C
=1~2W in Mounted on Ceramic Board
Complement to KSA1203
Marking
2 8
P Y
8 3
W W
SOT-89
1. Base
2. Collector
3. Emitter
1
Weekly code
Year code
h
FE
grage
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
30
5
V
V
V
A
A
V
CEO
V
EBO
I
C
1.5
0.3
I
B
Base Current
P
C
P
C
*
Collector Power Dissipation
500
1,000
mW
mW
T
J
Junction
T
e
mperature
Storage
T
e
mperature
150
°
C
°
C
T
STG
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Mounted on Ceramic Board (250mm
2
x0.8mm)
Electrical Characteristics *
T
a
= 25
°
C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
30
Typ.
Max.
Units
I
C
= 10
µ
A, I
B
= 0
V
V
I
E
= 1mA, I
C
= 0
5
V
CB
= 30
V
,
I
E
= 0
100
100
320
2.0
nA
nA
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
h
FE
DC Current Gain
V
CE
= 2V, I
C
= 500mA
I
C
= 1.5A, I
B
= 30mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 500mA
V
CB
= 10
V
,
I
E
= 0, f = 1MHz
100
V
CE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
1.0
Current Gain Bandwidth Product
Output Capacitance
120
40
MHz
pF
C
ob
* Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%
©2006 Fairchild Semiconductor Corporation
KSC2883 Rev. B3
1
h
FE
Classification
Classification
O
Y
h
FE
100 ~ 200
160 ~ 320
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2883
KSC2883
SOT-89
13”
—
4,000
2
KSC2883 Rev. B3
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. Base-Emitter On Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
I
B
= 8mA
I
B
= 10mA
V
CE
= 2V
I
B
= 6mA
1.2
I
B
= 5mA
I
B
= 4mA
0.8
I
B
= 3mA
I
B
= 2mA
0.4
I
B
= 1mA
0.0
0.0
0.4
0.8
1.2
1.6
0
2
4
6
8
10
12
14
16
V
BE
[V], Turn On VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
10000
V
CE
= 2V
Ic=10*Ib
1
1000
100
10
0.1
0.01
1
10
100
1000
1
10
100
1000
10000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 5. Safe Operating Area
Figure 6. Power Derating
1.6
10
I
C
MAX. (Pulse)
I
C
MAX. (DC)
10ms
1.2
0.8
0.4
0.0
100ms
1ms
1
1s
0.1
Ta = 25
o
C
Single Pulse
0.01
0.1
0
50
100
150
200
1
10
100
T
A
[
o
C], AMBIENT TEMPERATURE
V
CE
[V], COLLECTOR-EMITTER VOLATGE
3
KSC2883 Rev. B3
Mechanical Dimensions
SOT-89
1.50
0.20
4.50
0.20
1.65
0.10
(0.40)
C0.2
0.50
0.10
0.40
0.10
+0.10
–0.05
0.40
1.50 TYP
1.50 TYP
Dimensions in Millimeters
4
KSC2883 Rev. B3
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
®
®
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
ACEx™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
SILENT SWITCHER
SMART START™
SPM™
UltraFET
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
DOME™
UniFET™
VCX™
®
HiSeC™
Stealth™
Wire™
2
I C™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
i-Lo
™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
EcoSPARK™
2
E CMOS™
®
PowerTrench
EnSigna™
®
®
QFET
FACT
FAST
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µ
SerDes™
FASTr™
FPS™
FRFET™
TinyPWM™
TinyPower™
®
TinyLogic
TINYOPTO™
Across the board. Around the world.™
The Power Franchise
TruTranslation™
®
®
ScalarPump™
UHC
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I21
5
KSC2883 Rev. B3
