onsemi-KSC5024RTU
| Part # | onsemi-KSC5024RTU |
Download  | onsemi-KSC5024RTU |
October 2008
KSC5024
NPN Silicon Transistor
•
•
•
High Voltage and High Reliabilty
High Speed Switching
Wide SOA
TO-3P
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
Units
V
V
CBO
V
CEO
V
EBO
I
C
Collector-Base Voltage
800
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
500
V
7
V
10
A
I
CP
20
A
I
B
3
90
A
P
C
Collector Dissipation (T
C
=25
°
C)
Junction Temperature
W
°
C
°
C
T
J
150
T
STG
Storage Temperature
– 55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
T
a
=25
°
C unless otherwise noted
Symbol
BV
CBO
Parameter
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
Min.
Typ.
Max.
Units
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
800
500
7
V
V
V
V
BV
CEO
BV
EBO
V
CEX
(sus)
I
C
= 3.5A, I
B1
=-I
B2
=1.4A
500
L = 500
m
H, Clamped
I
CBO
I
EBO
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
10
10
50
m
A
m
A
h
FE1
h
FE2
V
CE
= 5V, I
C
= 0.8A
V
CE
=5V, I
C
= 4A
15
8
V
CE
(Sat)
V
BE
(Sat)
C
ob
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
I
C
= 4A, I
B
= 0.8A
I
C
= 4A, I
B
= 0.8A
1
V
V
1.5
V
CB
= 10V, I
E
=0, f =
1MHz
120
18
pF
f
T
t
on
t
s
Current Gain Bandwidth Product
Turn On Time
V
CE
= 10V, I
C
=0.8A
MHz
m
s
V
CC
= 200V
I
C
= 5I
B1
=-2.5I
B2
=5A
R
L
= 40
W
0.5
3
Storage Time
m
s
t
f
Time Fall Time
0.3
m
s
* Pulse Test: Pulse Width
£
300
m
s, Duty Cycle
£
2%
© 2007 Fairchild Semiconductor Corporation
KSC5024 Rev. 1.0.0
1
Typical Characteristics
12
10
8
1000
100
10
V
CE
= 5V
I
B
= 1.6A
I
B
= 1.4A
I
B
= 1.2A
I
B
= 1A
I
B
= 800mA
I
B
= 600mA
6
I
B
= 500mA
I
B
= 400mA
I
B
= 300mA
I
B
= 200mA
4
I
B
= 100mA
I
B
= 50mA
I
B
= 0
2
0
1
0
2
4
6
8
10
12
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
4
3
2
1
0
V
CE
= 5V
I
C
= 5 I
B
V
BE
(sat)
1
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
10
I
C
=5.I
B
50
m
s
I
C
(max).(Pulse)
I
C
(max)
t
STG
1
1
t
F
t
ON
0.1
0.1
0.01
0.01
0.1
1
10
100
1000
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 5. Switching Time
Figure 6. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
KSC5024 Rev. 1.0.0
2
Typical Characteristics
(Continued)
100
10
100
90
80
70
60
50
40
30
20
10
0
1
0.1
0.01
10
100
1000
10000
0
25
50
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[
o
C], CASE TEMPERATURE
Figure 1. Reverse Bias Safe Operating Area
Figure 2. Power Derating
© 2007 Fairchild Semiconductor Corporation
KSC5024 Rev. 1.0.0
3
Package Dimension (TO-3P)
5.00
4.60
15.80
15.40
1.65
1.45
5.20
4.80
(R0.50)
20.10
19.70
18.90
18.50
3.70
3.30
(1.85)
2.20
1.80
2.60
2.20
20.30
19.70
3.20
2.80
1.20
0.55
0.80
1
3
0.75
0.55
5.45
5.45
(R0.50)
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING PER
ASME14.5 1973.
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
E) DRAWING FILE NAME: TO3P03AREV2.
© 2007 Fairchild Semiconductor Corporation
KSC5024 Rev. 1.0.0
4
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx
®
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo
™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Power247
®
SuperSOT™-8
SyncFET™
Build it Now™
CorePLUS™
CROSSVOLT
™
CTL™
Current Transfer Logic™
EcoSPARK
®
POWEREDGE
®
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC
®
FAST
®
FastvCore™
FPS™
FRFET
®
OPTOPLANAR
®
®
UniFET™
VCX™
PDP-SPM™
Power220
®
Global Power Resource
SM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
KSC5024 Rev. A1
5
