onsemi-KSC838COBU
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KSC838
FM Radio RF AMP, MIX, CONV, OSC, IF AMP
•
•
High Current Gain Bandwidth Product : f
=250MHz (TYP.)
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
T
TO-92
1. Emitter
2. Base
3. Collector
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
a
Symbol
Parameter
Value
35
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
30
V
CEO
EBO
4
V
I
30
mA
mW
°
C
C
P
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
250
C
T
T
150
J
-55 ~ 150
°
C
STG
Electrical Characteristics
T =25
°
C unless otherwise noted
a
Symbol
Parameter
T
e
st Condition
Min.
35
30
4
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =100
µ
A, I
=0
V
V
CBO
CEO
EBO
C
E
BV
BV
I =5mA,
I =0
C B
I =10
µ
A, I
=0
V
E
C
I
I
V
=30
V
, I
=
0
0.1
0.1
µ
A
µ
A
CBO
EBO
CB
EB
CE
CE
E
Emitter Cut-off Current
V
V
V
=4
V
, I
=
0
C
h
DC Current Gain
=12
V
, I
=
2mA
40
240
0.75
0.4
FE
C
V
V
(on)
Base-Emitter On Voltage
=6
V
, I
=
1mA
0.65
0.70
0.1
V
V
BE
C
(sat)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I =10mA,
I =1mA
C B
CE
f
V
=10
V
, I
=
1mA
100
250
2.0
MHz
pF
T
CE
CB
C
C
V
=10
V
, I
=
0, f=1MHz
3.2
ob
E
h
Classification
FE
Classification
R
O
Y
h
40 ~ 80
70 ~ 140
120 ~ 240
FE
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
I
B
= 90
µ
A
I
B
= 80
µ
A
V
CE
=12V
I
B
= 70
µ
A
I
B
= 60
µ
A
I
B
= 50
µ
A
I
B
= 40
µ
A
I
B
= 30
µ
A
I
B
= 20
µ
A
I
B
= 10
µ
A
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
32
28
24
20
16
12
8
10
I
C
=10I
B
V
CE
=12V
1
V
BE(sat)
0.1
V
CE(sat)
4
0
0.0
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
10
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
1000
100
10
f = 1MHz
I
E
=0
V
CE
=10V
1
1
10
1
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-92
+0.25
–0.15
4.58
0.46
±
0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27
±
0.20
]
[1.27
±
0.20
]
3.60
±
0.20
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
POP™
STAR*POWER™
Stealth™
A
CEx™
Bottomless™
CoolFET™
CROSSVOLT
™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
Power247™
PowerTrench
®
QFET™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
UltraFET
®
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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KSC838
NPN Epitaxial Silicon Transistor
Contents
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|
Product
status/pricing/packaging
Features
●
●
High Current Gain Bandwidth Product :
f =250MHz
(TYP.)
T
Print version
Suffix “-C” means Center Collector (1.
Emitter 2. Collector 3. Base)
Design tools
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Applications
FM Radio RF AMP, MIX CONV,OSC,IF
AMP
company
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Product status/pricing/packaging
Product
KSC838COTA
KSC838CYTA
KSC838YBU
KSC838OBU
KSC838YTA
KSC838CYBU
KSC838OTA
KSC838COBU
Product status
Full Production
Full Production
Full Production
Full Production
Full Production
Full Production
Full Production
Full Production
Pricing*
Leads
Packing method
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TO-92
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