onsemi-KSD1408OTU
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KSD1408
Power Amplifier Applications
•
Complement to KSB1017
TO-220F
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
80
V
V
CBO
CEO
EBO
80
5
V
I
I
4
0.4
A
C
Base Current
A
B
P
Collector Dissipation (T
=25
°
C)
25
W
°
C
°
C
C
C
T
T
Junction
T
e
mperature
Storage
T
e
mperature
150
J
– 55 ~ 150
STG
Electrical Characteristics
T =25
°
C unless otherwise noted
C
Symbol
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Typ.
Max.
Units
V
BV
I
= 50mA, I
= 0
80
CEO
CBO
C
B
I
V
V
= 80V, I
= 0
30
µ
A
CB
EB
E
I
= 5V, I
= 0
100
240
µ
A
EBO
C
h
h
DC Current Gain
V
V
= 5V, I
= 0.5A
40
15
FE1
FE2
CE
CE
C
= 5V, I
= 3A
50
0.45
1
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
= 3A. I
= 0.3A
1.5
1.5
V
V
CE
C
B
V
V
V
= 5V, I
= 3A
C
BE
CE
CE
CB
f
Current Gain Bandwidth Product
Output Capacitance
= 5V, I
= 0.5A
8
MHz
pF
T
C
C
= 10V, f = 1MHz
90
ob
h
Classification
FE1
Classification
R
O
Y
h
40 ~ 80
70 ~ 140
120 ~ 240
FE1
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
1000
100
10
4.0
3.2
V
CE
= 5V
I
B
= 60mA
2.4
1.6
0.8
0.0
I
B
= 40mA
I
B
= 20mA
I
B
= 0mA
1
0.001
0.01
0.1
1
10
0
1
2
3
4
5
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
4
3
2
1
0
10
I
C
= 10 I
B
V
CE
= 5V
1
0.1
0.01
0.001
0.0
0.4
0.8
1.2
1.6
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
35
30
25
20
15
10
5
100
10
I
C
max(pulse)
I
C
(max)
1
0
0.1
0
25
50
75
100
125
150
175
1
10
100
1000
T
C
[
o
C], CASE TEMPERATURE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220F
2.54
±
0.20
10.16
±
0.20
(7.00)
ø3.18
±
0.10
(0.70)
(1.00×45
°
)
MAX1.47
0.80
±
0.10
(30
°
)
#1
0.35
±
0.10
+0.10
–0.05
0.50
2.76
±
0.20
2.54TYP
2.54TYP
[2.54
±
0.20
]
[2.54
±
0.20
]
9.40
±
0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST
®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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KSD1408
NPN Epitaxial Silicon Transistor
Contents
Features
|
Applications
|
Product
status/pricing/packaging
Features
●
Complement to KSB1017
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Power Amplifier
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Product status/pricing/packaging
company
Product
KSD1408GTU
KSD1408YTU
KSD1408OTU
Product status
Pricing*
Leads
Packing method
RAIL
Full Production
Full Production
Full Production
$0.336
$0.336
$0.336
3
3
3
RAIL
TO-220F
RAIL
* 1,000 piece Budgetary Pricing
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