onsemi-KSE13003H2ASTU

Is Now Part of  

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March 2008  

KSE13003  

NPN Silicon Transistor  

High Voltage Switch Mode Applications  

•

•

•

High Voltage Capability  

High Speed Switching  

Suitable for Switching Regulator and Motor Control  

TO-126  

1

1. Emitter

 

2.Collector 3.Base  

Absolute Maximum Ratings*  

T

= 25°C unless otherwise noted

(notes_1)  

C

Symbol  

Parameter  

Value  

700  

Units  

V

CBO  

Collector-Base Voltage  

V

V

V

CEO  

V

EBO  

I

C  

Collector-Emitter Voltage  

Emitter-Base Voltage  

400  

9

V

Collector Current (DC)  

Collector Current (Pulse)  

Base Current  

1.5  

A

I

CP  

3

A

I

B  

0.75  

20  

A

P

C  

Collector Dissipation (T

C

= 25

°

C)  

Junction Temperature  

Storage Temperature Range  

W

°

C  

°

C  

T

J  

150  

T

STG  

-65 ~ 150  

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  

NOTES_1:  

1) These ratings are based on a maximum junction temperature of 150

°

C.  

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  

h

Classification  

FE  

Classification  

H1  

H2  

H3  

h

FE  

*

9 ~ 16  

14~ 21  

19 ~ 26  

* Test on V

 

= 2V, I

 

= 0.5A.  

CE  

C

© 2007 Fairchild Semiconductor Corporation  

KSE13003 Rev. 1.0.0  

1

Electrical Characteristics  

T =

 

25°C unless otherwise noted  

C

Symbol  

BV

CEO  

I

EBO  

Parameter  

Conditions  

Min.  

Typ.  

Max Units  

Collector-Emitter Breakdown Voltage  

Emitter Cut-off Current  

I

C

= 5mA, I

B

= 0  

400  

V

V

EB

= 9V, I

C

= 0  

10  

40  

m

A  

h

FE  

*DC Current Gain  

V

CE

= 2V, I

C

= 0.5A  

V

CE

= 2V, I

C

=1A  

8

5

V

CE

(sat)  

V

BE

(sat)  

*Collector Emitter Saturation Voltage  

*Base Emitter Saturation Voltage  

I

C

= 0.5A, I

B

= 0.1A  

I

C

= 1A, I

B

= 0.25A  

I

C

= 1.5A, I

B

= 0.5A  

0.5  

1

3

V

V

V

I

C

= 0.5A, I

B

= 0.1A  

I

C

= 1A, I

B

= 0.25A  

1

1.2  

V

V

C

ob  

f

T  

Output Capacitance  

Current Gain Bandwidth Product  

Turn On Time  

V

CB

= 10V , f = 0.1MHz  

V

CE

= 10V, I

C

= 0.1A  

21  

pF  

MHz  

ms  

4

t

ON  

t

STG  

t

F  

V

CC

=125V, I

C

= 1A  

I

B1

= 0.2A, I

B2

= – 0.2A  

R

L

= 125W  

1.1  

4.0  

0.7  

Storage Time  

ms  

Fall Time  

ms  

* Pulse Test: Pulse Width=5ms, Duty Cycle

£

10%  

Package Marking and Ordering Information  

Device Item

(notes_2)  

KSE13003H1ASTU  

KSE13003H2ASTU  

KSE13003H3ASTU  

Notes_2 :  

Device Marking  

1 E13003  

Package  

TO-126  

Packing Method  

Remarks  

TUBE  

TUBE  

TUBE  

2 E13003  

TO-126  

3 E13003  

TO-126  

1) The Affix “-H1/-H2/-H3”

 

means the hFE classification.  

2) The Sufix “-STU”

 

© 2007 Fairchild Semiconductor Corporation  

KSE13003 Rev. 1.0.0  

2

Typical Performance Characteristics  

100  

10  

1

2.0  

V

CE

= 2V  

I

B

= 500mA  

1.6  

I

B

= 450mA  

I

B

= 350mA  

I

B

= 400mA  

I

B

= 300mA  

I

B

= 250mA  

I

B

= 200mA  

I

B

= 150mA  

I

B

= 100mA  

1.2  

0.8  

0.4  

0.0  

I

B

= 50mA  

I

B

= 0mA  

0.1  

0.01  

0.1  

1

10  

0

1

2

3

4

5

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

I

C

[A], COLLECTOR CURRENT  

Figure 1. Static Characteristic  

Figure 2. DC current Gain  

10  

10  

I

C

= 4 I

B  

t

STG  

V

BE

(sat)  

1

1

t

F  

0.1  

0.1  

V

C

E

(sat)  

0.01  

0.01  

0.01  

0.1  

0.1  

1

10  

1

I

C

[A], COLLECTOR CURRENT  

I

C

[A], COLLECTOR CURRENT  

Figure 3. Base-Emitter Saturation Voltage  

Collector-Emitter Saturation Voltage  

Figure 4. Switching Time  

30  

25  

20  

15  

10  

5

10  

I

C

MAX. (pulse)  

I

C

MAX. (DC)  

1

0.1  

0

0.01  

0

25  

50  

75  

100  

125  

150  

175  

1

10  

100  

1000  

T

C

[

o

C], CASE TEMPERATURE  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 5. Safe Operating Area  

Figure 6. Power Derating  

© 2007 Fairchild Semiconductor Corporation  

KSE13003 Rev. 1.0.0  

3

© 2007 Fairchild Semiconductor Corporation  

KSE13003 Rev. 1.0.0  

4

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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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