onsemi-KSH210TF

Part #onsemi-KSH210TF
Download 
onsemi-KSH210TF
KSH210  
D-PAK for Surface Mount Applications  
•
•
•
•
High DC Current Gain  
Low Collector Emitter Saturation Voltage  
Lead Formed for Surface Mount Applications (No Suffix)  
Straight Lead (I-PAK, “ – I “ Suffix)  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings

T =25
°
C unless otherwise noted  

C
Symbol  
Parameter  
Value  
– 40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
CBO  
CEO  
EBO  
– 25  
V
– 8  
V
I
I
I
– 5  
A
C
Collector Peck Current (Pulse)  
Base Current  
– 10  
A
CP  
B
– 1  
A
P
Collector Dissipation (T
 
= 25
°
C)  
12.5  
1.4  
W
W
°
C  
°
C  
C
C
Collector Dissipation (T
 
= 25
°
C)  
a
T
T
Junction
T
e
mperature  
Storage
T
e
mperature  
150  
J
– 65 ~ 150  
STG  
Electrical Characteristics

T =25
°
C unless otherwise noted  

C
Symbol  
Parameter  
* Collector-Emitter Sustaining Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
I
= – 10mA, I
 
= 0  
-25  
V
CEO  
CBO  
EBO  
C
B
I
I
V
V
= – 40
V
, I
 
= 0  
-100  
-100  
nA  
nA  
CB  
E
= – 8
V
, I
 
= 0  
EBO  
C
h
* DC Current Gain  
V
V
V
= – 1
V
, I
 
= –
5
00mA  
70  
45  
10  
FE  
CE  
CE  
CE  
C
= – 1
V
, I
 
= –
2
A  
180  
C
= – 2
V
, I
 
= –
5
A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
I
I
I
= – 500mA, I
 
= – 50mA  
-0.3  
-0.75  
-1.8  
V
V
V
CE  
C
C
C
B
= – 2A, I
 
= – 200mA  
B
= – 5A, I
 
= – 1A  
B
V
V
(sat)  
(on)  
* Base-Emitter Saturation Voltage  
* Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
= – 5A, I
 
= – 1A  
-2.5  
-1.6  
V
V
BE  
BE  
C
B
V
= – 1
V
, I
 
= –
2
A  
C
CE  
CE  
f
V
= – 10V, I
 
= – 100mA  
65  
MHz  
pF  
T
C
C
V
= – 10
V
, I
 
=
0
, f = 0.1MHz  
120  
ob  
CB  
E
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

Typical Characteristics  
1000  
100  
10  
-10  
I

C

=10I

B  

V

B
E

(sat)  
-1  
V

CE

=-2V  
V

CE

=-1V  
-0.1  
V

CE

(sat)  
1
-0.01  
-0.01  
-0.01  
-0.1  
-1  
-10  
-0.1  
-1  
-10  
I

C

[A], COLLECTOR CURRENT  
I

C

[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
1000  
10  
V

CC

=-30V  
I

C

=10I

B  

100  
10  
1
1
t

R  

0.1  
t

D  

0.01  
-0.01  
-0.1  
-1  
-10  
-100  
-0.1  
-1  
-10  
V

CB

[V], COLLECTOR BASE VOLTAGE  
I

C

[A], COLLECTOR CURRENT  
Figure 3. Collector Output Capacitance  
Figure 4. Turn On Time  
1000  
-100  
V

CC

=-30V  
I

C

=10I

B  

I

B1

=-I

B2  

-10  
-1  
t

STG  

100  
t

F  

-0.1  
-0.01  
-0.1  
10  
-0.01  
-1  
-10  
-100  
-0.1  
-1  
-10  
V

CE

[V], COLLECTOR-EMITTER VOLTAGE  
I

C

[A], COLLECTOR CURRENT  
Figure 5. Turn Off Time  
Figure 6. Safe Operating Area  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

Typical Characteristics
 

(Continued)  

20.0  
17.5  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0.0  
0
25  
50  
75  
100  
125  
150  
175  
T

C

[

o

C], CASE TEMPERATURE  
Figure 7. Power Derating  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

Package Dimensions  
D-PAK  
6.60
±
0.20  
5.34
±
0.30  
2.30
±
0.10  
0.50
±
0.10  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76
±
0.10  
0.50
±
0.10  
1.02
±
0.20  
2.30
±
0.20  
2.30TYP  
2.30TYP  
[2.30
±
0.20]  
[2.30
±
0.20]  
6.60
±
0.20  
(5.34)  
(5.04)  
(1.50)  
(2XR0.25)  
0.76
±
0.10  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

Package Dimension
s

(Continued)  

I-PAK  
2.30
±
0.20  
0.50
±
0.10  
6.60
±
0.20  
5.34
±
0.20  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76
±
0.10  
0.50
±
0.10  
2.30TYP  
2.30TYP  
[2.30
±
0.20]  
[2.30
±
0.20]  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
Rev. A4, October 2002  

TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FACT™  
ImpliedDisconnect™ PACMAN™  
SPM™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT
™ FRFET™  
DOME™  
FACT Quiet series™
 
ISOPLANAR™  
POP™  
Stealth™  
FAST

®  

LittleFET™  
MicroFET™  
MicroPak™  
Power247™  
PowerTrench

®  

QFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
FASTr™  
GlobalOptoisolator™ MICROWIRE™  
QS™  
EcoSPARK™  
E

2

CMOS™  
EnSigna™  
Across the board. Around the world.™  
The Power Franchise™  
GTO™  
HiSeC™  
I

2

C™  
MSX™  
MSXPro™  
OCX™  
OCXPro™  
OPTOLOGIC

®  

OPTOPLANAR™  
QT Optoelectronics™
 
TinyLogic™  
Quiet Series™  
TruTranslation™  
RapidConfigure™  
RapidConnect™  
UHC™  
UltraFET

®  

SILENT SWITCHER

®

VCX™  
SMART START™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2002 Fairchild Semiconductor Corporation  
Rev. I1