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April 2015  

KSH45H11  

PNP Epitaxial Silicon Transistor  

Features  

Description  

General-purpose power and switching such as output or  

driver stages in applications D-PAK for surface mount  

applications.  

• Lead

 

Formed for Surface Mount Application (No Suffix)  

• Straight

 

Lead (I-PAK, “- I” Suffix)  

• Electrically

 

Similar to Popular KSE45H  

• Fast

 

Switching Speeds  

• Low

 

Collector Emitter Saturation Voltage  

Applications  

• Switching

 

Regulators  

• Converters  

D-PAK  

I-PAK  

1

1

1.Base 2.Collector 3.Emitter  

• Power

 

Amplifiers  

Ordering Information  

Part Number  

KSH45H11TF  

KSH45H11TM  

KSH45H11ITU  

Top Mark  

KSH45H11  

KSH45H11  

KSH45H11-I  

Package  

Packing Method  

T

a

pe and Reel  

T

a

pe and Reel  

Rail  

TO-252 3L (DPAK)  

TO-252 3L (DPAK)  

TO-251 3L (IPAK)  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

– 80  

Unit  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

– 5  

V

Collector Current (DC)  

Collector Current (Pulse)  

– 8  

A

I

CP  

– 16  

A

Collector Dissipation (T

C

= 25°C)  

Collector Dissipation (T

A

= 25°C)  

Junction

T

e

mperature  

20  

P

C  

W

1.75  

T

J  

150  

°

C  

°

C  

T

STG  

Storage

T

e

mperature  

– 55 to +150  

© 2002 Fairchild Semiconductor Corporation  

KSH45H11 Rev. 2.7  

1

Electrical Characteristics

(1)  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Conditions  

I

C

= – 30 mA, I

B

= 0  

V

CE

= – 80 V, I

B

= 0  

V

EB

= – 5

V

, I

C

= 0  

Min.  

Typ.  

Max.  

Unit  

V

V

CEO

(sus) Collector-Emitter

 

Sustaining Voltage  

– 80  

I

CEO  

I

EBO  

Collector Cut-Off Current  

Emitter Cut-Off Current  

– 10  

– 50  

μ

A  

μ

A  

V

CE

= – 1 V, I

C

= – 2 A  

V

CE

= – 1 V, I

C

= – 4 A  

I

C

= – 8 A, I

B

= – 0.4 A  

I

C

= – 8 A, I

B

= – 0.8 A  

V

CE

= – 10

V

,

I

C

= – 0.5 A  

V

CB

= – 10 V, f = 1 MHz  

60  

40  

h

FE  

DC Current Gain  

V

CE

(sat) Collector-Emitter

 

Saturation Voltage  

V

BE

(sat) Base-Emitter

 

Saturation Voltage  

– 1  

V

V

– 1.5  

f

T  

C

ob  

t

ON  

t

STG  

t

F  

Current Gain Bandwidth Product  

Collector Capacitance  

Turn-On Time  

40  

MHz  

pF  

ns  

230  

135  

500  

100  

I

C

= – 5 A,  

Storage Time  

ns  

I

B1

= – I

B2

= – 0.5 A  

Fall Time  

ns  

Note:  

1. Pulse test: pulse width

≤

300

μ

s, duty cycle

≤

2%.  

© 2002 Fairchild Semiconductor Corporation  

KSH45H11 Rev. 2.7  

2

Typical Performance Characteristics  

-100  

-10  

1000  

V

CE

= -1V  

I

CP

(max)  

I

C

(max)  

100  

10  

1

-1  

-0.1  

-0.01  

-1  

-10  

-100  

-1000  

-0.01  

-0.1  

-1  

-10  

I

C

[A], COLLECTOR CURRENT  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 1. DC Current Gain  

Figure 2. Safe Operating Area  

25  

20  

15  

10  

5

0

0

25  

50  

75  

100  

125  

150  

175  

T

C

[

o

C], CASE TEMPERATURE  

Figure 3. Power Derating  

© 2002 Fairchild Semiconductor Corporation  

KSH45H11 Rev. 2.7  

3

Physical Dimensions  

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Figure 4. 3-LEAD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)  

© 2002 Fairchild Semiconductor Corporation  

KSH45H11 Rev. 2.7  

4

Physical Dimensions

(Continued)  

Figure 5. TO-251 (IPAK) MOLDED, 3-LEAD  

© 2002 Fairchild Semiconductor Corporation  

KSH45H11 Rev. 2.7  

5

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