onsemi-KSP2222ATF
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November 2014
KSP2222A
NPN
General-Purpose Amplifier
Features
• Collector-Emitter
Voltage: V
CEO
= 40 V
• Available
as PN2222A
TO-92
1. Emitter
2. Base
3. Collector
1
2 3
Ordering Information
Part Number
KSP2222ABU
KSP2222ATA
KSP2222ATF
Marking
KSP2222
KSP2222
KSP2222
Package
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
T
a
pe and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
75
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
V
6.0
V
600
mA
°
C
°
C
T
J
Junction
T
e
mperature
Storage
T
e
mperature
150
T
STG
-55 to +150
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.1.0
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Value
625
5
Unit
mW
Power Dissipation by R
θ
JA
P
D
Derate Above 25
°
C
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
83.3
200
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
Parameter
Conditions
I
C
= 10
μ
A, I
E
= 0
Min.
75
Max.
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
40
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
I
E
= 10
μ
A, I
C
= 0
6.0
V
V
CB
= 60 V, I
E
= 0
0.01
10
μ
A
nA
I
EBO
V
EB
= 3.0
V
, I
C
= 0
V
CE
= 10 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 1 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 150 mA
(2)
V
CE
= 10 V, I
C
= 500 mA
(2)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
35
50
h
FE
DC Current Gain
75
100
40
300
0.3
1.0
1.2
2.0
V
CE
(sat) Collector-Emitter
Saturation Voltage
(2)
V
BE
(sat) Base-Emitter
Saturation Voltage
(2)
V
V
0.6
I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
f
T
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
300
MHz
pF
V
CB
= 10 V, I
E
= 0,
f = 1.0 MHz
C
ob
t
ON
t
OFF
NF
8
35
285
4
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA, V
BE(off)
= 0.5 V
ns
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
Turn-Off Time
ns
I
C
= 100
μ
A, V
CE
= 10 V,
R
S
= 1 k
Ω
, f = 1.0 kHz
Noise Figure
dB
Note:
2. Pulse test: Pulse width
≤
300
μ
s, duty cycle
≤
2%
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.1.0
2
Physical Dimensions
D
Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.1.0
3
Physical Dimensions
(Continued)
Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.1.0
4
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Rev. I72
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