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September 2015  

KSP44 / KSP45  

NPN Epitaxial Silicon Transistor  

Features  

• High-Voltage

 

Transistor  

• Collector-Emitter

 

Voltage: V

CEO

= KSP44: 400 V  

KSP45: 350 V  

TO-92  

1. Emitter  

2. Base  

1

1

3. Collector  

2

2

3

3

Straight Lead  

Bulk Packing  

Bent Lead  

Tape & Reel  

Ammo Packing  

Ordering Information  

Part Number  

KSP44BU  

KSP44TA  

Top Mark  

KSP44  

Package  

TO-92 3L  

TO-92 3L  

TO-92 3L  

TO-92 3L  

Packing Method  

Bulk  

KSP44  

Ammo  

KSP44TF  

KSP44  

T

a

pe and Reel  

Ammo  

KSP45TA  

KSP45  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Value  

500  

Unit  

KSP44  

KSP45  

KSP44  

KSP45  

V

CBO  

Collector-Base Voltage  

Collector-Emitter Voltage  

V

400  

400  

V

CEO  

V

350  

V

EBO  

I

C  

Emitter-Base Voltage  

Collector Current  

6

V

300  

mA  

°

C  

°

C  

T

J  

Junction

T

e

mperature  

Storage

T

e

mperature  

150  

T

STG  

-55 to 150  

© 2002 Fairchild Semiconductor Corporation  

KSP44 / KSP45 Rev. 1.6  

Thermal Characteristics

(1)  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Value  

625  

Unit  

mW  

W

T

A

= 25

°

C  

T

C

= 25

°

C  

P

D  

Power Dissipation  

1.5  

R

θ

JC  

R

θ

JA  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

83.3  

200  

°

C/W  

°

C/W  

Note:  

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

Parameter  

Conditions  

Min.  

500  

400  

400  

350  

6

Max.  

Unit  

KSP44  

KSP45  

KSP44  

KSP45  

Collector-Base Breakdown  

Voltage  

BV

CBO  

I

C

= 100

μ

A, I

E

= 0  

V

Collector-Emitter  

BV

CEO  

BV

EBO  

I

CBO  

I

C

= 1 mA, I

B

= 0  

V

V

Breakdown Voltage

(2)  

Emitter-Base Breakdown Voltage  

I

E

= 100

μ

A, I

C

= 0  

KSP44 V

CB

= 400 V, I

E

= 0  

KSP45 V

CB

= 320 V, I

E

= 0  

KSP44 V

CE

= 400 V, I

B

= 0  

KSP45 V

CE

= 320 V, I

B

= 0  

V

EB

= 4

V

,

I

C

= 0  

0.1  

0.1  

0.5  

0.5  

0.1  

Collector Cut-Off Current  

μ

A  

I

CES  

I

EBO  

Collector Cut-Off Current  

Emitter Cut-Off Current  

μ

A  

μ

A  

V

CE

= 10 V, I

C

= 1 mA  

V

CE

= 10 V, I

C

= 10 mA  

V

CE

= 10 V, I

C

= 50 mA  

V

CE

= 10 V, I

C

= 100 mA  

I

C

= 1 mA, I

B

= 0.1 mA  

40  

50  

45  

40  

200  

h

FE  

DC Current Gain

(2)  

0.40  

0.50  

0.75  

0.75  

V

Collector-Emitter Saturation Voltage

(2)

I

C

= 10 mA, I

B

= 1 mA  

V

I

C

= 50 mA, I

B

= 5 mA  

V

BE

(sat)  

C

ob  

Base-Emitter Saturation Voltage

(2)  

Output Capacitance  

I

C

= 10 mA, I

B

= 1 mA  

V

V

7

pF  

f = 1 MHz  

Note:  

2. Pulse test: pulse width

≤

300

μ

s, duty cycle

≤

2%.  

© 2002 Fairchild Semiconductor Corporation  

KSP44 / KSP45 Rev. 1.6  

2

Typical Performance Characteristics  

160  

10  

V

CE

=10V  

V

CC

=150V  

I

C

/I

B

=10  

140  

T

a

=25

℃

 

V

BE

(off)=4V  

120  

100  

80  

60  

1

40  

20  

0

tf  

-20  

-40  

td  

0.1  

1

10  

100  

1000  

10000  

1

10  

100  

I

C

[mA], COLLECTOR CURRENT  

I

C

[mA], COLLECTOR CURRENT  

Figure 1. DC Current Gain  

Figure 2. Turn-On Switching Times  

1000  

100  

10  

100  

10  

1

T

a

=25

℃

 

f=1MHz  

V

CC

=150V  

I

C

/I

B

=10  

T

a

=25

℃  

C

ib  

ts  

tf  

Cob  

1

0.1  

0.1  

1

10  

100  

1000  

1

10  

100  

V

CB

[V], COLLECTOR-BASE VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

Figure 3. Turn-Off Switching Times  

Figure 4. Capacitance  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

T

a

=25

℃  

T

a

=25

℃  

I

C

=1mA  

I

C

=10mA  

I

C

=50mA  

V

BE

(sat) @I

C

/I

B

=10  

V

BE

(on) @V

CE

=10V  

V

CE

(sat)@I

C

/I

B

=10  

10  

100  

1000  

10000  

100000  

0.1  

1

10  

100  

1000  

I

C

[mA], COLLECTOR CURRENT  

I

C

[mA], COLLECTOR CURRENT  

Figure 5. On Voltage  

Figure 6. Collector Saturation Region  

© 2002 Fairchild Semiconductor Corporation  

KSP44 / KSP45 Rev. 1.6  

3

Typical Performance Characteristics

(Continued)  

100000  

10000  

1000  

100  

100  

Valid for Duty Cycle

≤

10%  

V

CE

=10V  

f=10MHz  

T

a

=25

℃

 

10  

100us  

1ms  

1s  

1

10  

MSPA44  

1

0.1  

0.1  

1

10  

100  

1000  

10000  

1

10  

100  

1000  

I

C

[mA], COLLECTOR CURRENT  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 7. High-Frequency Current Gain  

Figure 8. Safe Operating Area  

© 2002 Fairchild Semiconductor Corporation  

KSP44 / KSP45 Rev. 1.6  

4

Physical Dimensions  

Figure 9. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type  

© 2002 Fairchild Semiconductor Corporation  

KSP44 / KSP45 Rev. 1.6  

5

Physical Dimensions

(Continued)  

Figure 10. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type  

© 2002 Fairchild Semiconductor Corporation  

KSP44 / KSP45 Rev. 1.6  

6

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