onsemi-LA1193V-TRM-E

Part #onsemi-LA1193V-TRM-E
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onsemi-LA1193V-TRM-E
Ordering number : EN4715B  
Monolithic Linear IC  
LA1193M  
LA1193V  
Overview  
For Car Radios  
High-Performance FM Front End  
The LA1193M and LA1193V are front-end ICs developed for use in car radios. It incorporates an extremely wide dynamic  
range mixer and a new AGC system consisting of a dual-system wide-band AGC and a new keyed AGC to provide  
excellent interference suppression characteristics.  
Features  
•
Improved interference characteristics  
— Expanded mixer input dynamic range  
Mixer input usable sensitivity :
 
15dB
µ  
Mixer input I.M. QS :  
90dB
µ  
(The dynamic range has been increased by 6dB over the earlier LA1175M.)  
— Development of a new wide-band AGC circuit  
Improved interference characteristics for both nearchannel interference and far-channel interference Improved  
interference characteristics for the TV band  
— Development of a 3D-AGC system  
The adjacent channel two-signal interference characteristics can be effectively improved without degrading the  
strong-field three-signal interference characteristics during keyed AGC operation.  
•
Improved stability design  
— AGC circuit local oscillator isolation  
Measures were taken to prevent the deterioration of AMR, noise level, THD and other characteristics during AGC  
operation.  
— AGC circuit incorrect operation measures  
The LA1193M provides methods to prevent incorrect operation due to local oscillator injection and loss of DC balance.  
•
Improved temperature characteristics  
— Conversion gain  
— AGC sensitivity  
— Antenna damping drive output current  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
“standard application”, intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any “special application” (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer
‘
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
‘
s products or  
equipment.  
52808 MS JK/31097HA (OT)/61094TH(OT) A8-9997 No. 4715-1/22  

LA1193M, 1193V  
Functions  
•
Double-balance mixer  
•
Pin diode drive output  
•
Differential IF amplifier  
•
Dual-system wide-band AGC circuit  
•
Local buffer output  
•
3D-AGC system  
•
FET gate drive AGC output  
•
IF amplifier gain control pin  
Specifications  
Maximum Ratings
at Ta = 25
°
C  
Parameter  
Symbol  
Conditions  
for pins 5 and 17  
Ratings  
Unit  
V
Maximum supply voltage  
V
max  
V
V
9
15  
CC  
max mix  
CC  
V
for pins 10 and 11  
V
CC  
CC  
Allowable power dissipation  
Pd max  
LA1193M : (Ta
≤
70
°
C)  
Mounted on a 41
×
30
×
1.1mm

3

glass-Epoxy board  
500  
mW  
Pd max  
LA1193V : (Ta
≤
70
°
C)  
500  
mW  
Mounted on a 23
×
36
×
1.6mm

3

glass-Epoxy board  
*
Operating temperature  
Storage temperature  
Topr  
Tstg  
−
40 to
+
85  
°
C  
°
C  
−
40 to
+
125  
Note :
*
Connect a resistor (up to 10k
Ω
) between pins 17 and 19.  
Operating Conditions
at Ta = 25
°
C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Recommended supply voltage  
Operating supply voltage range  
V
8.0  
CC  
V
op  
7.6 to 9  
V
CC  
Electrical Characteristics
at Ta = 25
°
C, V  
= 8.0
V
,
i
n the specified test circuit, f = 88MHz, f  
= 77.3MHz  
OSC  
CC  
Ratings  
Parameter  
Symbol  
Conditions  
= 0V  
CONT  
Unit  
min  
typ  
max  
29  
Current drain  
I
No input, V  
19  
7.0  
7.6  
24  
mA  
mA  
V
CCO  
Antenna damping current  
AGC high voltage  
ANT-DI  
88MHz, 100dB
µ
, V  
= 4.0V  
9.5  
7.9  
0.4  
110  
85  
12.5  
CONT  
V
88MHz, 0dB
µ
, V
 
= 4.0V  
CONT  
AGC-H  
AGC low voltage  
V
88MHz, 100dB
µ
, V  
88MHz, 110dB
µ
, V  
88MHz, 110dB
µ
, V  
= 4.0V  
= 4.0V  
= 4.0V  
0.9  
V
AGC-L  
CONT  
CONT  
CONT  
Saturation output voltage  
−
3dB limiting sensitivity  
Conversion gain  
V
97  
78  
98  
dB
µ  
dB
µ  
dB
µ  
dB
µ  
dB
µ  
OUT  
Vi-Limit  
92  
A. V  
88MHz, 75dB
µ
, V  
CONT  
= 4.0V  
101  
109  
104  
Local buffer output  
V
-Buff  
OSC  
No input, no modulation  
105  
Narrow V  
V-NAGC  
V-WAGC  
V3D-AGC  
88MHz, V  
= 4.0V, at an input level  
is 2V or less  
73  
80  
87  
AGC-ON  
CONT  
such that V  
(76)  
(83)  
(90)  
AGC-OUT  
Wide V  
88MHz, V  
CONT  
= 0V, at an input level  
is 2V or less  
97  
101  
0.6  
105  
0.8  
dB
µ  
AGC-ON  
such that V  
AGC-OUT  
3D-AGC-ON  
88MHz, V  
variable, with 95dB
µ  
0.4  
V
CONT  
being the V  
voltage input such that  
CONT  
V
switches from high to low and  
AGC-OUT  
2.0V as the V  
threshold value.  
AGC  
Note : Values in parenthesis are for LA1193V.  
No.4715-2/22  

LA1193M, 1193V  
Package Dimensions  
unit : mm (typ)  
Package Dimensions  
unit : mm (typ)  
3179C  
[LA1193V]  
3036C  
[LA1193M]  
Block Diagram and Test Circuit Diagram  
V-AGCOUT  
SFE-10.7MS3A10-A  
V
CC  
SFE-10.7MS3A10-A  
TO FMIF INPUT  
150
Ω
 
LA1193-OUTPUT  
0.047
µ
F  
0.022
µ
F  
330
Ω  
47pF  
+
IF GND  
V
DD  
10
µ
F  
510
Ω  
0.022
µ
F  
VCL  
IF V  
CC  
17  
MIX OUT(2)  
11  
20  
19  
18  
16  
15  
14  
13  
12  
KEYED  
AGC  
IF  
SUMIDA  
2136-023  
LD  
ANT D  
24
Ω  
0.022
µ
F  
BUFF  
OSC  
BUFF  
MIX  
V
CC  
1
2
3
4
5
6
7
8
IN W-AGC  
9
10  
MIX OUT(1)  
1000pF  
-BUFFER  
OSC  
BUFF  
OSC  
B
OSC  
GND  
OSC  
E
OSC  
V
ANT  
D
MIX IN
 
MIX  
(1)  
(2)  
5pF  
IN  
4pF  
5pF  
CC  
V
OSC  
1000pF  
30k
Ω  
+
15pF  
22
µ
F  
1k
Ω  
SVC203  
1000pF  
22pF  
68pF  
V
100k
Ω  
T
A
I-AN
T
.
D  
V
CC  
51/2
Ω  
51
Ω  
SVC203  
V
T
30k
Ω  
51
Ω  
+
SG  
FREQ  
No.4715-3/22  

LA1193M, 1193V  
Application Circuit Example : USA and Europe  
Application Circuit Example : Japan  
SFE-10.7MS3A10-A  
V
CC  
FM IF  
SFE-10.7MS3A10-A  
150
Ω  
0.022
µ
F 0.022
µ
F  
+
47pF  
IF GND  
SMETER  
1
µ
F  
100k
Ω  
20k
Ω  
0.022
µ
F  
VCL  
20  
IF V  
CC  
17  
510
Ω  
13  
MIX OUT(2)  
11  
19  
18  
16  
15  
14  
12  
KEYED  
AGC  
IF  
SUMIDA  
2136-023  
LD  
ANT D  
24
Ω  
0.022
µ
F  
BUFF  
1
OSC  
BUFF  
4
MIX  
V
CC  
2
3
5
6
7
8
9
10  
MIX OUT(1)  
OSC  
GND  
OSC  
E
OSC  
IN W-AGC  
ANT  
D
MIX IN
 
MIX  
V
(2)  
IN  
100pF  
(1)  
5pF  
5pF  
SVC203  
4pF  
CC  
OSC OSC  
BUFF  
30k
Ω  
B
PLL  
15pF  
16pF  
10pF  
SUMIDA  
SA-125  
22pF  
62pF  
V
CC  
V
T
SUMIDA  
SA-129  
1000pF  
10pF  
SUMIDA  
SA-123  
3SK263  
10pF  
V
CC  
6pF  
220
Ω  
ANT  
SVC203  
V
T
Only the secondary  
side is used.  
V
CC  
30k
Ω  
100k
Ω  
The primary side is  
left open.  
SVC203  
1000pF  
V
T
1SV234  
No.4715-4/22  

LA1193M, 1193V  
Coil Specifications  
Coils Manufactured by Sumida Electronics  
Japan band RF coil SA-129 or SA-143  
Japan oscillator coil SA-125  
Japan antenna coil SA-123 or SA-144  
US band RF coil SA-142 or SA-250  
US band antenna coil SA-140 or SA-231  
US band oscillator coil SA-278  
S
3
4
3
2
1
4
4-6  
1-3  
T
1
2
2
T
6
S
Mixer coil (for both bands) SA-266  
No.4715-5/22  

LA1193M, 1193V  
Pin Functions  
Pin No.  
Function  
Equivalent circuit  
Note  
1
OSC BUFF  
2
3
4
5
OSC Tr. base  
OSC GND  
Colpitts oscillator  
OSC Tr. emitter  
OSC V  
CC  
6
7
Mix input (1)  
Mix input (2)  
Mix out (1)  
Mix out (2)  
Mixer input usable sensitivity  
15dB
µ  
Mixer input I.M. QS  
10  
11  
90.5dB
µ  
(6.5dB higher than previous products)  
Conversion gain  
15dB  
Input impedance  
25
Ω  
9
Antenna damping  
drive output  
I
= 10mA  
ANTD  
12  
IF GND  
Continued on next page.  
No.4715-6/22  

LA1193M, 1193V  
Continued from preceding page.  
Pin No.  
Function  
Equivalent circuit  
Note  
8
W-AGC input  
Since the DC cut capacitor is provided on-chip in the  
pin internal circuit, we have taken steps to prevent  
incorrect AGC operation due to inter-pin leakage  
currents.  
13  
N-AGC input  
Since the DC cut capacitor is provided on-chip in the  
pin internal circuit, we have taken steps to prevent  
incorrect AGC operation due to inter-pin leakage  
currents.  
14  
15  
18  
19  
IF AMP bypass  
IF AMP input  
IF gain : 25dB  
Input and output impedances of 330
Ω  
The IF gain can be adjusted by inserting a resistor  
between pins 17 and 19.  
IF AMP output  
IF AMP gain adjust  
The gain is at its maximum when there is no resistor  
inserted.  
16  
RF AGC  
OUTPUT  
MOSFET  
Second gate control  
Continued on next page.  
No.4715-7/22  

LA1193M, 1193V  
Continued from preceding page.  
Pin No.  
Function  
Equivalent circuit  
Note  
17  
IF, AGC, V  
CC  
20  
Keyed AGC input  
Controls the narrow AGC.  
1. Oscillator Circuit  
Steps were taken to prevent AMR degradation during earlier product type  
AGC operation, since the local oscillator block in this IC has independent  
Vd (pin 5) and ground (pin 3) connections.  
This is a Colpitts oscillator and has the same structure as that used in  
earlier circuits. The oscillation level and intensity are changed by  
capacitors C
 
, C
 
and C
 
.  
2-4  
4
P
2. Local Oscillator Buffer Output  
This buffer is an emitter follower circuit.  
If desired, the buffer efficiency can be increased by inserting a resistor  
between pin 1 and ground to pass more current through the buffer  
transistor. However, this current must be limited so that Pdmax for the  
package is not exceeded.  
No.4715-8/22  

LA1193M, 1193V  
3. Interference Characteristics  
The LA1193M incorporates a newly developed 3D-AGC (triple dimension) circuit. This circuit allows three-signal  
interference characteristics (inter-modulation characteristics) and two-signal sensitivity suppression characteristics to  
be provided at the same time, a combination of characteristics previously thought difficult to achieve.  
•
Inter-Modulation Characteristics  
The LA1193M prevents inter-modulation distortion by applying two wide-band AGC circuits.  
This double wide-band AGC system consists of two AGC circuits and a narrow AGC (pin 13 input, mixer input  
detection type) as shown in Figure 1. Figure 2 shows the antenna input frequency characteristics.  
No.4715-9/22  

LA1193M, 1193V  
Features of the Double Wide AGC System  
— Since this is a mixer input detection wide-band AGC, it prevents the occurrence of intermodulation due to  
interfering stations with
∆
f > 1MHz. (TV band interference prevention)  
— Since this system uses a narrow AGC at the same time, the wide AGC sensitivity can be lowered, thus preventing  
incorrect operation due to local oscillator injection.  
— Optimal sensitivities for any field conditions can be set, since the sensitivities of both the wide and narrow AGC  
systems can be set by changing the values of external components.  
— The input level of the desired station is limited by the narrow AGC. As a result, excessive levels are no longer input  
to the stages that follow the mixer and the beats at multiples of 10.7
×
A are reduced.  
•
Two-Signal Sensitivity Suppression Characteristics  
Previously, keyed AGC systems were used to provide good intermodulation distortion and two signal sensitivity  
suppression characteristics at the same time. However, in previous keyed AGC systems, when the desired station  
would fade or drop out, the wide band AGC level would become essentially zero. As a result, the automatic station  
selection function would malfunction and blocking oscillation would occur in the presence of strong interfering  
stations. Thus keyed AGC systems were extremely hard to use in actual practice. Sanyo has developed a new AGC  
system (3D-AGC) that solves these problems and allows the construction of extremely simple application circuits.  
The LA1193M/V incorporates this AGC system.  
What is the 3D-AGC system?  
It is a system that determines the wide-band AGC level by using information that has the following three frequency  
characteristics.  
RF and antenna circuit information
 
Mixer input AGC  
Three  
Mixer circuit information  
C, F and selectivity information  
Mixer output AGC  
S-meter output  
dimensions  
3D-AGC Features  
Feature  
Merit  
The narrow AGC sensitivity, which operates for
∆
f of less than 1.5MHz, is  
controlled independently according to the field strength of the desired  
station.  
•
This is effective as a measure for mitigating two signal sensitivity  
suppression.  
The narrow AGC sensitivity is controlled at V
 
values under 2V.  
20  
•
This allows two signal sensitivity suppression to be mitigated without  
deterioration in the three signal characteristics.  
The wide AGC operates even when V
 
is zero, i.e., when the desired  
20  
station does not exist.  
•
This allows the prevention of incorrect stopping on intermodulation  
signals during search.  
•
This allows the prevention of intermodulation occurring in the  
antenna and RF modulation circuits in the presence of strong  
interfering stations. Prevention of blocking oscillation due to AGC  
operation is also possible.  
The N-AGC and the W-AGC sensitivities can be set independently.  
The system has two AGC systems, the N-AGC and the W-AGC.  
•
This allows optimal settings to match the reception field conditions.  
•
Since the narrow AGC operates at the desired station and at  
adjacent stations, it is possible to reduce the wide AGC sensitivity.  
This prevents incorrect AGC operation due to local oscillator  
injection.  
No.4715-10/22  

LA1193M, 1193V  
3D-AGC Sensitivity,
∆
f and V
 
Characteristics  
20  
AGC sensitivity  
W-AGC sensitivity  
∆
F  
Two signal sensitivity  
suppression improvement  
N-AGC sensitivity  
Desired station  
AGC sensitivity  
V
(desired station  
20  
field strength)  
Figure 3
 
3D-AGC Sensitivity,
∆
f and V
 
Characteristics  
20  
— The W-AGC sensitivity is determined by the antenna RF circuit selectivity independently of V  
20  
.
— The N-AGC sensitivity is determined by the antenna, RF and mixer circuit total selectivity when V
 
is 0.6V or  
20  
greater. It is determined by that selectivity and V
 
when V
 
is over 0.6V.  
20 20  
— The improvement in two-signal sensitivity suppression is the shaded area in the total AGC sensitivity and  
corresponds to the section occupied by the N-AGC.  
4. Mixer  
The mixer circuit used in this IC is a balanced input/balanced output double balance mixer circuit.  
•
Input Format  
Emitter input  
Input impedance : 25
Ω  
MIX  
Optimization of the component geometry, emitter  
current and bias allow this circuit to achieve the  
following performance.  
OSC  
Mixer input usable sensitivity : 15dB
µ  
Mixer input IMQS* : 90.5dB
µ  
Figure 4
 
Mixer Circuit  
Note : *Mixer input IMQS is defined as follows :  
(Improved by 6.0dB
µ
over previous products.)  
IMQS is the interference 1 and 2 input levels such that when an  
interference signal with the same level is input to the mixer and  
distortion occurs at the mixer, the generated IM output has a S/N  
ratio of 30dB.  
f =
 
98.8MHz, no input  
r
f
f
= 98.8MHz, 1kHz, 30% modulation  
= 99.6MHz, no modulation  
u1  
u2  
No.4715-11/22  

LA1193M, 1193V  
5. IF Amplifier  
This IF amplifier is a single stage differential amplifier.  
Specifications  
Input impedance :
 
330
Ω  
Output impedance : 330
Ω  
Gain :  
25dB  
Gain adjustment can be provided using either of the methods shown.  
IF Gain adj  
Temperature Characteristics  
The LA1193M/V uses Vref temperature characteristics correction to hold the gain temperature characteristics to the  
low level of about 1dB over the range
−
30 to
+
80
°
C.  
6. AGC Circuit  
The LA1193M/V uses pin diode antenna damping (pin 9) and MOSFET second gate voltage control (pin 16) for AGC.  
The AGC operating sequence is as follows :  
Antenna damping (pin diode)
→
MOSFET second gate voltage control  
(attenuation) 20dB  
(attenuation) dB  
The above AGC sequence is used for the following reasons.  
•
Intermodulation distortion can occur if a signal of 110dBµ or larger is input to the antenna circuit varactor diode.  
In such situations, if the AGC sequence was MOSFET second gate voltage control followed by pin diode antenna  
damping, as long as the receiver was not in a strong field where the 60dB or higher AGC attenuation operates, input  
limitation due to the antenna circuit varactor diode would operate. Therefore, we feel that the AGC operating  
sequence employed is appropriate.  
•
Consider the problem of AGC loop stability. If the two AGC loops (the antenna damping AGC loop and the MOSFET  
second gate control AGC loop) operate, the AGC system would become unstable and have an excessively large  
influence on the transient response. Therefore the following structure cannot be used.  
MOSFET second gate control
→
antenna damping
→
MOSFET second gate control  
The AGC operating conditions are the same as those for the LA1175M.  
•
Narrow AGC circuit  
Since the LA1193M/V’s N-AGC (which detects the mixer output) is set to have a high sensitivity, care is required to  
avoid incorrect operation. In particular, there must be adequate separation from the local oscillator block on the  
printed circuit board pattern. Also, a resistor of at least 500
Ω
must be inserted at the pin 13 input. A low-pass filter is  
formed by the insertion of this resistor. This low-pass filter prevents incorrect AGC operation due to the local  
oscillator.  
•
The AGC sensitivity setting can be changed by adjusting the  
value of the capacitor connected at pin 13. Although the AGC  
sensitivity can be lowered by increasing the value of the series  
resistor, caution is required since the AGC has its own frequency  
characteristics.  
No.4715-12/22  

LA1193M, 1193V  
•
Wide AGC circuit  
The wide AGC sensitivity is set by the value of the capacitor on pin 8. However, since incorrect operation due to the  
local oscillator signal may occur if this capacitor is too large, its value must be chosen carefully.  
•
3D-AGC  
If the difference in sensitivity between the N-AGC and the W-AGC systems is too large during 3D-AGC operation,  
the S/N ratio can be degraded in the vicinity of the input where the AGC switches. Therefore, the 3D-AGC setting  
values must be selected carefully. Although this problem can be ameliorated by applying a time constant to pin 20, in  
principle, this S/N ratio degradation should be prevented by limiting the sensitivity difference between the two AGC  
systems.  
Pd max —
T
a  
[LA1193V]  
[LA1193M]  
Pd max —
T
a  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
When mounted on a 23
×
36
×
1.6mm

3

glass epoxy  
When mounted on a 41
×
30
×
1.1mm

3

glass epoxy  
printed circuit board  
printed circuit board  
-40  
-20  
0
20  
40  
60  
80 85  
100  
-40  
-20  
0
20  
40  
60  
80 85  
100  
Ambient temperature, Ta —
°
C  
Ambient temperature, Ta —
°
C  
JK119329  
JK119330  
I/O characteristics  
3SK251
+
LA1193M or 1193V
+
LA1145M  
S
+
N  
I/O characteristics  
0
-20  
40  
20  
14  
13  
V
f
fm  
=
fr  
8.0V  
=
CC  
D
510
Ω  
51pF  
=
=
83MHz  
1kHz  
22.5kHz  
12  
10  
8
f
V
SM  
8
V
= 8.0
V
,
f
r = 83MHz  
fm = 1kHz, dev22.5kHz  
Audio Filter, IHF-BPF T/200  
D
CC  
Mix  
dev  
=
0
f
S
+
N  
D
-40  
6
4
V
fuD S  
+
N
SM  
-20  
-40  
-60  
30%mod  
fm
=
1kHz  
6
AM OUT  
-60  
fuD N  
fuD V  
4
SM  
-80  
2
0
N
f
N
D
-80  
2
0
fuD V  
AGC  
THD  
-100  
-20  
-100  
-20  
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
100  
120  
140  
160  
Antenna input level — dB
µ  
Antenna input level — dB
µ  
JK119331  
JK19332  
Two-signal interference characteristics  
Two-signal interference characteristics  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
3SK251  
+
LA1193M or 1193V  
+
LA1145M  
3SK251  
+
LA1193M or 1193V  
+
LA1145M  
V
fr  
fm  
dev  
fuD  
=
8.0V  
V
fr  
fm  
dev  
fuD  
=
8.0V  
CC  
83MHz  
1kHz  
22.5kHz  
CC  
83MHz  
1kHz  
22.5kHz  
=
=
=
=
=
=
=
f
∆
f  
=
f
∆
f  
r
r
non dev  
non dev  
Dummy two – signal input  
Dummy two – signal input  
75
Ω
24
Ω  
24
Ω  
75
Ω
24
Ω  
75
Ω
24
Ω  
75Ω  
ANT  
input  
ANT  
input  
75
Ω
24
Ω  
50  
60  
70  
80  
90  
100  
110  
120  
130  
50  
60  
70  
80  
90  
100  
110  
120  
130  
Interfering station input level — dB
µ  
Interfering station input level — dB
µ  
JK119333  
JK119334  
No.4715-13/22  

LA1193M, 1193V  
Three-signal interference characteristics  
Three-signal interference characteristics  
70  
60  
50  
40  
30  
20  
70  
60  
50  
40  
30  
20  
3SK251
+
LA1193M or 1193V
+
LA1145M  
= 8.0V  
3SK251
+
LA1193M or 1193V
+
LA1145M  
V
V
fr  
dev  
=
8.0V  
CC  
CC  
83MHz  
22.5kHz  
1kHz  
fr = 83MHz  
dev = 22.5kHz  
fm = 1kHz  
=
=
fm  
=
fuD1 = f  
non dev  
fuD2 = f  
dev = 22.5kHz  
fm = 400Hz  
∆
f  
fuD1  
non dev  
=
f
∆
f  
r
r
2
∆
f  
fuD2  
=
2
∆
f  

f

r  
r
dev  
fm  
=
22.5kHz  
=
400Hz  
Dummy  
three – signal input  
Dummy three – signal input  
75
Ω
36
Ω  
75
Ω
36
Ω  
75
Ω
36
Ω
36
Ω  
75
Ω
36
Ω  
75
Ω
36
Ω
36
Ω  
ANT  
input  
ANT  
input  
10  
0
10  
0
75
Ω
36
Ω  
50  
60  
70  
80  
90  
100  
110  
120  
130  
50  
60  
70  
80  
90  
100  
110  
120  
130  
Interfering station input level — dB
µ  
Interfering station input level — dB
µ  
JK119335  
JK119336  
Two-signal interference characteristics  
LA1193M or 1193V
+
LA1145M (Mute-off)  
S
+
N  
20  
0
-20  
-40  
-60  
V
= 8.0
V
, f
 
=
f
r = 83MHz  
D
CC  
fm = 1kHz, dev = 22.5kHz  
-80  
f D
 
= 83.4MHz, non dev  
u
∗
The antenna actual input level is shown, with the pad  
loss subtracted.  
-100  
40  
50  
60  
70  
80  
90  
100  
110  
120  
130  
Interference antenna input — dB
µ  
JK119337  
Vo  
, antenna dump, FET Source — V  
AGC IN
 
ANT  
10  
V
OUT  
V
W
= 0V  
AGC only  
AGC  
CL  
8
6
4
47pF  
510
Ω  
−
13  
10  
N-AGC-IN  
Mix-OUT  
11  
3
2
47000pF  
24
Ω  
V
9
V
CC  
V
= 8.0V  
CC  
2
0
1
0
fr = 83MHz  
fm = 1kHz  
dev = 22.5kHz  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
Antenna input — dB
µ  
JK119338  
Vo  
, I  
AGC ANT-D  
— V
 
MIX  
IN  
10  
8
20  
16  
12  
8
fr = 83MHz  
V
V
= 0V  
= 0V  
CC  
CL  
V
OUT  
OUT  
V
V
= 8.0V  
= 7.0V  
5pF  
AGC  
CC  
36
Ω  
75
Ω  
150
Ω  
to IF  
6
10  
11  
V
AGC  
CC  
75
Ω  
Mix  
SG  
6
7
V
= 8.0V  
5pF  
CC  
IAN
T
–
D  
4
V
= 7.0V  
CC  
V
V
T
11  
T
IANP-D  
W-AGC-INPUT  
2
0
4
0
0
20  
40  
60  
80  
100  
120  
140  
Mixer input — dB
µ  
JK119340  
No.4715-14/22  

LA1193M, 1193V  
Vo  
, I  
AGC ANT-D  
— V
 
M
IX  
IN  
10  
8
20  
fr = 83MHz  
V
V
= 5V  
= 8.0V  
CL  
CC  
V
V
OUT  
OUT  
V
V
= 8.0V  
= 7.0V  
AGC  
CC  
16  
12  
8
1000pF  
36
Ω  
5pF  
5pF  
150
Ω  
510
Ω  
to IF  
6
7
10  
11  
AGC  
CC  
75
Ω  
Mix  
6
75
Ω  
SG  
V
V
= 8.0V
 
IAN
T
–
D  
= 7.0V
 
IAN
T
–
D  
CC  
4
13  
N-AGC-INPUT  
V
CC  
CC  
V
T
4
0
2
0
0
20  
40  
60  
80  
100  
120  
140  
Mixer input — dB
µ  
JK119342  
Vo  
, I  
AGC ANT-D  
— V
 
AGC  
IN  
Vo  
, I  
AGC ANT-D  
— V
 
AGC  
IN  
10  
8
10  
8
V
=
8.0V  
V
= 8.0V  
CC  
CC  
fr
=
10.7MHz  
fr = 83MHz  
V
OUT  
V
OUT  
AGC  
V
=
V  
AGC  
V
= 0V  
CL  
SM  
CL  
16  
12  
8
N-AGC  
13  
I-ANT-Dump  
W-AGC-IN I-ANT-Dump  
6
9
6
8
9
12  
8
OUT  
510
Ω  
47F  
ImA  
A
ImA  
A
4pF  
I-AN
T
–
D  
I-AN
T
–
D  
A
A
Pin Di  
Pin Di  
4
4
36
Ω  
36
Ω  
1SV234  
1SV234  
75
Ω  
75
Ω  
1000pF  
1000pF  
75
Ω  
75
Ω  
SG  
60  
SG  
f = 83MHz  
4
0
4
0
2
0
2
0
0
0
20  
40  
80  
100  
120  
140  
20  
40  
60  
80  
100  
120  
140  
Pin 13 AGC input — dB
µ
(the input value at point A)

JK119344  

Pin 8 AGC input — dB
µ
(the input value at point A)

JK119345  

Mixer input —
∆
f  
110  
V
= 0V  
CL  
W-AGC only  
100  
90  
1000pF  
36
Ω  
5pF  
5pF  
6
7
10  
11  
75
Ω  
Mix  
47pF  
75
Ω  
SG  
N-AGC  
510
Ω  
V
=
4V  
CL  
13  
N-AGC-INPUT  
V
CC  
80  
V
=
8.0V  
CC  
8
V
T
fr
=
83MHz  
70  
60  
W-AGC-INPUT  
A mixer input level such  
that the V
 
pin 16  
AGC  
output is under 2V  
-6  
-5  
-4  
-3  
-2  
-1  
0
1
2
3
4
5
6
∆
f — MHz  
JK119346  
AGC frequency response  
AGC frequency response  
130  
130  
V
=
8.0V  
V
=
8.0V  
CC  
CC  
N-AGC INPUT  
AGC INPUT  
120  
110  
100  
90  
120  
110  
100  
90  
R
36
Ω
75
Ω  
47pF  
13  
N-AGC  
INPUT  
C
36
Ω  
75
Ω  
7
75
Ω  
SG  
2
13  
SG  
75
Ω  
80  
80  
N-AGC-INPUT  
70  
70  
3
5
7
2
3
5
7
2
3
5
7
100  
2
3
5 7  
3
5
7
2
3
5
7
2
3
5
3
5 7  
1.0  
10  
1.0  
10  
100  
AGC input frequency — MHz  
AGC input frequency — MHz  
JK119348  
JK119349  
No.4715-15/22  

LA1193M, 1193V  
V
— V  
V
— V  
CL20  
AGC  
CL20  
AGC20  
140  
130  
120  
110  
100  
140  
f
C
= 10.7MHz  
V
=
8.0V  
=
10.7MHz  
CC  
W-AGC-OFF  
f
C
Cannot be measured  
for values higher than  
126dB
µ  
130  
120  
110  
100  
V
CC  
20  
510
Ω
36
Ω  
75
Ω  
7.5V  
7.0V  
8.0V  
V
CC  
= 8.5V  
13  
47pF  
SG  
75
Ω  
25
°
C  
Ta = 80
°
C  
90  
80  
90  
80  
−
40
°
C  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
JK119350  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Pin 20 voltage, V  
CL20  
— V  
Pin 20 voltage, V  
CL  
— V  
JK119351  
AGC ON Level —
T
a  
AGC ON Level —
T
a  
1.0  
0.8  
0.6  
0.4  
98  
94  
90  
86  
82  
78  
V
CC  
=
8.0V  
V
f
=
8.0V  
CC  
C
AGC pin input  
=
10.7MHz  
W-AGC-OFF (With pin 8 open)  
20  
510
Ω
36
Ω  
75
Ω  
22000pF  
36
Ω  
75
Ω  
13  
47pF  
0.2  
0
8pin  
or  
SG  
75
Ω  
74  
70  
75
Ω  
SG  
13pin  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
100  
7
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature, Ta —
°
C  
Ambient temperature, Ta —
°
C  
JK119352  
JK119353  
AGC ON Level —
T
a  
110  
106  
102  
98  
V
= 8.0V  
CC  
N-AGC-IN  
13  
fr = 83MHz  
47pF  
5pF  
5pF  
150
Ω  
75
Ω
35
Ω  
75
Ω  
1IF  
94  
Mix  
90  
SG  
86  
100k
Ω  
30k
Ω  
0.022
µ
F  
24
Ω  
82  
V
T
3pF  
8
78  
W-AGC-IN  
74  
70  
-60  
-40  
-20  
0
20  
40  
60  
80  
JK119354  
Ambient temperature, Ta —
°
C  
V
— f  
AGC  
130  
120  
110  
100  
90  
V
=
8.0V  
CC  
AGC pin input  
22000pF  
36
Ω  
N-AGC13pin 75
Ω  
75
Ω  
W-AGC8pin  
SG  
W-AG  
C
90  
70  
3
5
7
2
3
5
7
2
3
5
7
100  
2
3
5
1.0  
10  
AGC input frequency — MHz  
JK119356  
No.4715-16/22  

LA1193M, 1193V  
V
— V  
CL  
AGC OUT  
10  
8
V
= 8.0V  
CC  
fr = 83MHz  
N-AGC-IN  
13  
V
= 100dB
µ  
IN  
W-AGC OFF  
(With pin 8  
47pF  
connected to ground)  
MIX input  
1000pF  
75
Ω
36
Ω  
5pF  
5pF  
150
Ω  
IF  
6
Mix  
75
Ω  
4
100k
Ω  
30k
Ω  
0.022
µ
F  
24
Ω  
V
V
CC  
CC  
2
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Pin 20 voltage, V  
— V  
CL  
JK119357  
I
— V  
ANT-D  
CL  
2
f
V
=
10.7MHz  
=
100dB
µ  
C
I-AN
T
–
D  
10  
7
5
IN  
(Pin 13 input)  
N-AGC-only  
W-AGC off  
3
2
1.0  
7
13  
9
5
510
Ω  
47pF  
I
A
3
2
36
Ω  
75
Ω  
75
Ω  
0.1  
7
5
1000pF  
SG  
3
2
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
Pin 20 voltage, V  
— V  
CL  
JK119359  
Vo MIX — V
 
MIX  
IN  
130  
120  
110  
100  
90  
fr = 83MHz  
f
f
= 72.3MHz  
= 10.7MHz  
OSC  
IF  
Vin-Mix  
5pF  
1000pF  
V
-IF  
O
75
Ω
36
Ω  
Mix  
330
Ω  
5pF  
SG  
75
Ω  
100k
Ω  
30k
Ω  
1000pF  
24
Ω  
V
V
CC  
80  
T
70  
60  
60  
70  
80  
90  
100  
110  
120  
JK119360  
Mixer input — dB
µ  
Vo IF — V
 
IF  
IN  
130  
120  
110  
100  
90  
f
= 10.7MHz  
C
OPEN  
19  
75
Ω
36
Ω  
15  
14  
22000pF  
IF OUTPUT  
1IF  
22000pF  
75
Ω  
AMP  
SG  
330
Ω  
22000pF  
80  
70  
60  
50  
60  
70  
80  
90  
100  
110  
120  
130  
IF input voltage — dB
µ  
JK119362  
No.4715-17/22  

LA1193M, 1193V  
Vo IF — Ta  
130  
120  
110  
100  
90  
V
= 8.0V  
CC  
fr = 83MHz  
A
1000pF  
5pF  
150
Ω  
24
Ω  
18  
6
10  
11  
15  
14  
22000pF  
36
Ω  
IF  
IF OUTPUT  
Mix  
330
Ω  
75
Ω  
22000pF  
7
80  
22000pF  
V
V
T
CC  
70  
60  
40  
50  
60  
70  
80  
90  
100  
110  
120  
IF input voltage — dB
µ  
JK119364  
IF AMP — f  
130  
120  
110  
100  
V
V
= 8.0V  
= 100dB
µ
(pin 15)  
CC  
IN  
OPEN  
19  
36
Ω  
15  
22000pF  
IF OUTPUT  
330
Ω  
22000pF IF
 
AMP  
14  
75
Ω  
22000pF  
90  
80  
3
5
7
2
3
5
7
2
3
5
7
100  
2
3
5 7  
1.0  
10  
IF input frequency — MHz  
JK119366  
V
— Ta  
OSC  
90  
86  
82  
78  
V
= 8.0V  
CC  
3
4
V
15pF  
OSC Buff  
1
22pF  
SVC203  
V
62pF  
8pF  
10pF  
30k
Ω  
74  
70  
V
T
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
Ambient temperature, Ta —
°
C  
JK119368  
∆
f  
OSC  
— Ta  
400  
300  
200  
100  
0
V
= 8.0V  
= 72.3MHz  
CC  
f
OSC  
3
4
Ta = 25
°
C  
15pF  
22pF  
SVC203  
62pF  
10pF 8pF  
-100  
-200  
30k
Ω  
-300  
-400  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
Ambient temperature, Ta —
°
C  
JK119370  
No.4715-18/22  

LA1193M, 1193V  
Vo IF — Ta  
100  
96  
92  
88  
84  
80  
76  
72  
68  
V
f
= 8.0V  
CC  
= 10.7MHz  
120dB
µ  
C
90dB
µ  
80dB
µ  
22000pF  
SG  
19  
22000pF  
300
Ω  
15  
36
Ω  
75
Ω  
75
Ω  
V
14  
IF  
O
AC  
22000pF  
56
Ω
51
Ω  
70dB
µ  
60dB
µ  
64  
60  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature, Ta —
°
C  
JK119372  
V
IF — Ta  
IN  
100  
98  
92  
88  
84  
80  
76  
72  
68  
V
f
= 8.0V  
CC  
= 10.7MHz  
C
−
3dB limit  
22000pF  
15  
22000pF  
18  
36
Ω  
75
Ω  
75
Ω  
V
IF  
14  
O
Vo
I
F = 78dB
µ  
V
51
Ω  
56
Ω  
64  
60  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature, Ta —
°
C  
JK119374  
Vo IF — Ta  
110  
100  
90  
V
= 8.0V  
CC  
fr = 83MHz  
120dB
µ  
100dB
µ  
V
-Mix  
IN  
22000pF  
IF  
1000pF  
75
Ω  
150
Ω  
22000pF  
36
Ω  
5pF  
5pF  
AMP  
IF OUTPUT  
Mix  
330
Ω  
22000pF  
SG  
75
Ω  
80  
1000pF  
24
Ω  
60dB
µ  
70  
V
T
V
CC  
60  
50  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
Ambient temperature, Ta —
°
C  
JK119376  
MIX — Ta  
96  
92  
88  
84  
80  
76  
72  
68  
V
= 8.0V  
CC  
fr = 83MHz  
V
-Mix  
IN  
22000pF  
1000pF  
75
Ω  
150
Ω  
22000pF  
IF  
AMP  
36
Ω  
5pF  
5pF  
IF OUTPUT  
Mix  
330
Ω  
22000pF  
SG  
75
Ω  
1000pF  
24
Ω  
V
V
T
CC  
64  
60  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
Ambient temperature, Ta —
°
C  
JK119378  
No.4715-19/22  

LA1193M, 1193V  
No.4715-20/22  

LA1193M, 1193V  
No.4715-21/22  

LA1193M, 1193V  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s  
intellctual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of May, 2008. Specifications and information herein are subject to  
change without notice.  
PS No. 4715-22/22