onsemi-MAC15A8G
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MAC15 Series
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid
−
state relays, motor controls, heating controls and power
supplies; or wherever full
−
wave silicon gate controlled solid
−
state
devices are needed. Triac type thyristors switch from a blocking to a
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering.
TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
Features
•
Blocking
V
o
ltage to 800 V
•
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2
MT1
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or
Four Modes (MAC15A Series)
G
MARKING
DIAGRAM
•
These Devices are Pb
−
Free and are RoHS Compliant*
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
4
Rating
Symbol
Value
Unit
TO
−
220AB
CASE 221A
STYLE 4
MAC15xxG
AYWW
V
V
DRM,
RRM
(T =
−
40 to +125
°
C, Sine Wave 50 to 60 Hz,
V
J
Gate Open)
MAC15A6G
400
600
800
MAC15
−
8G, MAC15A8G
MAC15
−
10G, MAC15A10G
1
2
Peak Gate Voltage
V
10
V
A
3
GM
(Pulse Width
v
1.0
m
sec; T
= 90
°
C)
C
On
−
State Current RMS; Full Cycle Sine
I
T(RMS)
15
MAC15xx = Specific Device Code
Wave 50 to 60 Hz (T
= +90
°
C)
C
xx
A
Y
= Assembly Location (Optional)*
= Year
2
2
Circuit Fusing Consideration (t = 8.3 ms)
I t
93
A s
WW
G
= Work Week
= Pb
−
Free Package
Peak Non
−
Repetitive Surge Current (One
I
150
A
TSM
Full Cycle Sine Wave, 60 Hz, T
= +80
°
C)
C
Preceded and Followed by Rated Current
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
Peak Gate Power
P
20
W
GM
(T =
+80
°
C, Pulse Width = 1.0
m
s)
C
Average Gate Power (T
= +80
°
C, t = 8.3 ms)
P
0.5
2.0
W
A
C
G(AV)
Peak Gate Current
I
GM
PIN ASSIGNMENT
(Pulse Width
v
1.0
m
sec; T
= 90
°
C)
C
1
2
3
4
Main
T
e
rminal 1
Main
T
e
rminal 2
Gate
Operating Junction
T
e
mperature Range
Storage
T
e
mperature Range
T
−
40 to +125
°
C
−
40 to +150
°
C
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Main
T
e
rminal 2
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012
−
Rev. 5
MAC15A4/D
MAC15 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
2.0
Unit
°
C/W
°
C/W
°
C
Thermal Resistance, Junction
−
to
−
Case
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JC
R
q
JA
62.5
260
Maximum Lead
T
e
mperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Blocking Current
T =
25
°
C
J
I
−
−
−
−
10
2.0
m
A
mA
J
DRM,
RRM
(V =
Rated V
, V
; Gate Open)
T =
125
°
C
I
D
DRM RRM
ON CHARACTERISTICS
V
TM
−
1.3
1.6
V
TM
Gate Trigger Current (Continuous dc) (V
= 12 Vdc, R
= 100
W
)
I
mA
D
L
GT
MT2(+), G(+)
−
−
−
−
−
−
−
−
50
50
50
75
MT2(+), G(
−
)
MT2(
−
), G(
−
)
MT2(
−
), G(+) “A’’ SUFFIX ONLY
Gate Trigger Voltage (Continuous dc) (V
= 12 Vdc, R
= 100
W
)
V
V
V
D
L
GT
MT2(+), G(+)
−
−
−
−
0.9
0.9
1.1
1.4
2
2
MT2(+), G(
−
)
MT2(
−
), G(
−
)
MT2(
−
), G(+) “A’’ SUFFIX ONLY
2
2.5
Gate Non
−
Trigger Voltage (V
= 12 V, R
= 100
W
) T
= 110
°
C)
V
GD
D
L
J
MT2(+), G(+); MT2(
−
), G(
−
); MT2(+), G(
−
)
MT2(
−
), G(+) “A’’ SUFFIX ONLY
0.2
0.2
−
−
−
−
Holding Current (V
= 12 Vdc, Gate Open, Initiating Current =
“
200 mA)
I
−
−
6.0
1.5
40
mA
D
H
Turn-On Time (V
= Rated V
, I
= 17 A)
t
gt
−
m
s
D
DRM TM
(I =
120 mA, Rise Time = 0.1
m
s, Pulse Width = 2
m
s)
GT
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (V
= Rated V
, I
= 21 A,
DRM TM
dv/dt(c)
−
5.0
−
V/
m
s
D
Commutating di/dt = 7.6 A/ms, Gate Unenergized, T
= 80
°
C)
C
2. Pulse
T
e
st: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
ORDERING INFORMATION
Device
Device Marking
Package
Shipping
MAC15
−
8G
MAC15
−
10G
MAC15A6G
MAC15A8G
MAC15A10G
TO
−
220AB
(Pb
−
Free)
MAC15
−
8
TO
−
220AB
(Pb
−
Free)
MAC1510
MAC15A6
MAC15A8
MAC15A10
TO
−
220AB
(Pb
−
Free)
500 Units Bulk
TO
−
220AB
(Pb
−
Free)
TO
−
220AB
(Pb
−
Free)
2
MAC15 Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
Main
T
e
rminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
DRM
off state
TM
I
H
I
at V
DRM
I
H
Quadrant 3
Main
T
e
rminal 2
−
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(
−
) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(
−
) MT2
(
−
) MT2
Quadrant III
Quadrant IV
(+) I
(
−
) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in
−
phase signals (using standard AC lines) quadrants I and III are used.
3
MAC15 Series
130
120
110
100
20
α
= 180
°
α
= 30
°
α
= 60
°
α
= 90
°
120
°
90
°
16
12
T
≈
125
°
J
dc
α
60
°
α
30
°
α
= 180
°
α
= CONDUCTION ANGLE
8
dc
α
90
80
4
0
α
T
≈
125
°
J
α
= CONDUCTION ANGLE
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
RMS ON-STATE CURRENT (AMP)
I
ON-STATE CURRENT (AMP)
T(RMS),
T(RMS),
Figure 2. On
−
State Power Dissipation
Figure 1. RMS Current Derating
1.8
1.6
1.4
1.2
1.0
0.8
50
OFF-STATE VOLTAGE = 12 V
QUADRANT 4
OFF-STATE VOLTAGE = 12 V
30
20
1
2
3
10
1
2
3
QUADRANTS
QUADRANT
0.6
0.4
7.0
5.0
4
-60 -40 -20
0
20
40
60
80 100
120 140
-60 -40 -20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 4. Typical Gate Trigger Current
Figure 3. Typical Gate Trigger Voltage
4
MAC15 Series
100
70
20
GATE OPEN
MAIN TERMINAL #1
POSITIVE
50
T =
25
°
C
J
10
7.0
5.0
125
°
C
30
20
MAIN TERMINAL #2
POSITIVE
3.0
2.0
10
7
-60 -40 -20
0
20
40
60
80
100 120 140
T , JUNCTION TEMPERATURE (
°
C)
J
5
Figure 6. Typical Holding Current
3
2
300
200
1
0.7
0.5
100
70
0.3
0.2
T
= 80
°
C
Tꢀ
f = 60 Hz
C
50
Surge is preceded and followed by rated current
0.1
30
0.4 0.8
1.2 1.6
2
2.4 2.8 3.2
3.6
4
4.4
1
2
3
5
7
10
v
TM
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES
Figure 5. On
−
State Characteristics
Figure 7. Maximum Non
−
Repetitive
Surge Current
1
0.5
0.2
0.1
Z
•
R
q
JC
q
JC(t) = r(t)
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1 k
2 k
5 k
10 k
t, TIME (ms)
Figure 8. Thermal Response
5
MAC15 Series
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AG
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−
T
−
C
S
B
F
T
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.28
4.82
0.91
4.09
2.66
4.10
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.405
0.190
0.036
0.161
0.105
0.161
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
J
V
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
4. MAIN
TERMINAL 2
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
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copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf.
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reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLIC
A
T
ION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
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Phone: 421 33 790 2910
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Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
P
.
O. Box 5163, Denver, Colorado 80217 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
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o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MAC15A4/D
