onsemi-MAC15M

MAC15M, MAC15N  

Triacs  

Silicon Bidirectional Thyristors  

Designed for high performance full-wave AC control applications  

where high noise immunity and high commutating di/dt are required.  

Features  

•

Blocking

V

o

ltage to 800

V

o

lts  

TRIACS  

•

On-State Current Rating of 15 Amperes RMS at 80

°

C  

•

Uniform Gate Trigger Currents in Three Modes  

•

High Immunity to dv/dt − 250 V/

m

s minimum at 125

°

C  

•

Minimizes Snubber Networks for Protection  

•

Industry Standard TO−220 Package  

15 AMPERES RMS  

600 thru 800 VOLTS  

MT2  

MT1  

G

•

High Commutating di/dt − 9.0 A/ms minimum at 125

°

C  

•

Operational in Three Quadrants, Q1, Q2, and Q3  

•

These Devices are Pb−Free and are RoHS Compliant*  

MARKING  

DIAGRAM  

MAXIMUM RATINGS

(T =

 

25

°

C unless otherwise noted)  

J

Rating  

Symbol  

Value  

Unit  

MAC15xG  

AYWW  

Peak Repetitive Off−State Voltage (Note 1)  

V

V

V

DRM,  

RRM  

(

−

4

0 to 125

°

C, Sine Wave, 50 to 60 Hz,  

Gate Open)  

MAC15M  

MAC15N  

600  

800  

TO−220  

CASE 221A  

STYLE 4  

1

2

3

On−State RMS Current  

I

15  

A

A

T(RMS)  

(Full Cycle Sine Wave, 60 Hz, T

 

= 80

°

C)  

C

x

A

Y

= M or N  

Peak Non-repetitive Surge Current  

(One Full Cycle Sine Wave, 60 Hz,  

T =

 

125

°

C)  

J

I

150  

TSM  

= Assembly Location  

=

Y

e

ar  

WW =

 

Work Week  

2

2

Circuit Fusing Consideration (t = 8.3 ms)  

I t  

93  

20  

A s  

G

= Pb−Free Package  

Peak Gate Power  

P

W

W

GM  

(Pulse Width

≤

1.0

m

s, T

 

= 80

°

C)  

C

PIN ASSIGNMENT  

Main

T

e

rminal 1  

Main

T

e

rminal 2  

Gate  

Average Gate Power  

P

0.5  

G(AV)  

1

(t = 8.3 ms, T

 

= 80

°

C)  

C

2

3

4

Operating Junction

T

e

mperature Range  

Storage

T

e

mperature Range  

T

J

−40 to +125  

−40 to +150  

°

C  

°

C  

T

stg  

Main

T

e

rminal 2  

Stresses exceeding those listed in the Maximum Ratings table may damage the  

device. If any of these limits are exceeded, device functionality should not be  

assumed, damage may occur and reliability may be affected.  

1. V  

and V  

for all types can be applied on a continuous basis. Blocking  

DRM  

RRM  

ORDERING INFORMATION  

voltages shall not be tested with a constant current source such that the  

voltage ratings of the devices are exceeded.  

Device  

Package  

Shipping  

MAC15MG  

TO−220  

50 Units / Rail  

(Pb−Free)  

MAC15NG  

TO−220  

50 Units / Rail  

(Pb−Free)  

*For additional information on our Pb−Free strategy and soldering details, please  

download the ON Semiconductor Soldering and Mounting

T

e

chniques  

Reference Manual, SOLDERRM/D.  

©

Semiconductor Components Industries, LLC, 2014  

1

Publication Order Number:  

November, 2014 − Rev. 3  

MAC15M/D  

MAC15M, MAC15N  

THERMAL CHARACTERISTICS  

Characteristic  

Symbol  

Value  

Unit  

Thermal Resistance,

 

Junction−to−Case  

Thermal Resistanc

e

Junction−to−Ambient  

R

R

2.0  

62.5  

°

C/W  

q

q

JC  

JA  

Maximum Lead

T

e

mperature for Soldering Purposes 1/8

″

from Case for 10 Seconds  

T

L

260  

°

C  

ELECTRICAL CHARACTERISTICS

(T =

 

25

°

C unless otherwise noted; Electricals apply in both directions)  

J

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Peak Repetitive Blocking Current  

I

,

mA  

DRM  

(V =

 

Rated V  

, V  

RRM  

; Gate Open)  

T =

 

25

°

C  

T =

 

125

°

C  

J

I

RRM  

−

−

−

−

0.01  

2.0  

D

DRM  

J

ON CHARACTERISTICS  

Peak On-State Voltage (Note 2)  

(I 21

 

A Peak)  

Gate Trigger Current (Continuous DC) (V

 

= 12

V

, R

 

=

1

00

W

)  

V

V

TM  

=

−

1.2  

1.6  

TM  

I

mA  

D

L

GT  

MT2(+), G(+)  

MT2(+), G(−)  

MT2(−), G(−)  

5.0  

5.0  

5.0  

13  

16  

18  

35  

35  

35  

Hold Current  

I

mA  

mA  

H

(V =

 

12 Vdc, Gate Open, Initiating Current =

 

150 mA)  

D

−

20  

40  

Latching Current (V

 

= 24

V

, I

 

=

3

5 mA)  

I

D

G

L

MT2(+), G(+)  

MT2(+), G(−)  

MT2(−), G(−)  

−

−

−

33  

36  

33  

50  

80  

50  

Gate Trigger Voltage (V

 

= 12 V, R

 

= 100

W

)  

V

GT  

V

D

L

MT2(+), G(+)  

MT2(+), G(−)  

MT2(−), G(−)  

0.5  

0.5  

0.5  

0.75  

0.72  

0.82  

1.5  

1.5  

1.5  

DYNAMIC CHARACTERISTICS  

Rate of Change of Commutating Current; See Figure 10.  

(V =

 

400

V

, I

 

=

6

.0 A, Commutating dv/dt = 24 V/

m

s,  

(di/dt)  

9.0  

−

−

−

−

A/ms  

c

C =

 

10

m

F  

L =

 

40 mH  

L

D

TM  

L

Gate Open, T

 

= 125

°

C, f = 250 Hz, No Snubber)  

J

Critical Rate of Rise of Off-State Voltage  

dv/dt  

250  

V/

m

s  

(V =

 

Rated V  

, Exponential Waveform, Gate Open, T

 

= 125

°

C)  

J

D

DRM  

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  

performance may not be indicated by the Electrical Characteristics if operated under different conditions.  

2. Pulse

 

T

e

st: Pulse Width

≤

2.0 ms, Duty Cycle

≤

2%.  

2

MAC15M, MAC15N  

Voltage Current Characteristic of Triacs  

(Bidirectional Device)  

+ Current  

Quadrant 1  

Main

T

e

rminal 2 +  

Symbol  

Parameter  

V

TM  

V

Peak Repetitive Forward Off State Voltage  

Peak Forward Blocking Current  

DRM  

DRM  

on state  

I

I

H

I

at V  

RRM  

V

Peak Repetitive Reverse Off State Voltage  

Peak Reverse Blocking Current  

RRM  

RRM  

RRM  

I

V

Maximum On State Voltage  

Holding Current  

+ Voltage  

off state  

TM  

I

H

I

at V  

DRM  

DRM  

I

H

Quadrant 3  

Main

T

e

rminal 2 −  

V

TM  

Quadrant Definitions for a Triac  

MT2 POSITIVE  

(Positive Half Cycle)  

+

(+) MT2  

(+) MT2  

Quadrant II  

Quadrant I  

(−) I  

(+) I  

GT  

GT  

GATE  

GATE  

MT1  

MT1  

REF  

REF  

I

−

+ I  

GT  

GT  

(−) MT2  

(−) MT2  

Quadrant III  

Quadrant IV  

(+) I  

(−) I  

GT  

GT  

GATE  

GATE  

MT1  

REF  

MT1  

REF  

−

MT2 NEGATIVE  

(Negative Half Cycle)  

All polarities are referenced to MT1.  

With in−phase signals (using standard AC lines) quadrants I and III are used.  

3

MAC15M, MAC15N  

125  

120  

115  

110  

105  

100  

95  

20  

18  

16  

DC  

180

°  

120

°  

90

°  

α

= 30 and 60

°  

14  

12  

10  

8

60

°  

α

= 90

°  

α

= 180

°  

α

= 120

°  

α

= 30

°  

6

DC  

90  

4

85  

2

80  

0

0

2

4

6

8

10  

12  

14  

16  

0

2

4

6

8

10  

12  

14  

16  

I

, RMS ON‐STATE CURRENT (AMP)  

I

T(RMS)  

, ON‐STATE CURRENT (AMP)  

T(RMS)  

Figure 1. RMS Current Derating  

Figure 2. On−State Power Dissipation  

100  

10  

1

1

TYPICAL AT  

T =

 

25

°

C  

MAXIMUM @ T

 

= 125

°

C  

J

J

0.1  

0.01  

4

0.1  

1

10  

100  

t, TIME (ms)  

1000  

1ꢀ·ꢀ10  

Figure 4. Transient Thermal Response  

MAXIMUM @ T

 

= 25

°

C  

40  

J

MT2 POSITIVE  

MT2 NEGATIVE  

0.1  

5

-ꢀ40  

0

0.5  

1

1.5  

2

2.5  

3

3.5  

4

-ꢀ10  

20  

50  

80  

110 125  

V , INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)  

T

T , JUNCTION TEMPERATURE (

°

C)  

J

Figure 3. On−State Characteristics  

Figure 5. Hold Current Variation  

4

MAC15M, MAC15N  

100  

1

OFF‐STATE VOLTAGE = 12 V  

R =

 

140

W  

L

Q2  

Q3  

Q1  

Q1  

Q3  

Q2  

OFF‐STATE VOLTAGE = 12 V  

R =

 

140

W  

L

1

-ꢀ40  

0.5  

-ꢀ40  

-ꢀ10  

20  

50  

80  

110 125  

-ꢀ10  

+20  

50  

80  

110 125  

T , JUNCTION TEMPERATURE (

°

C)  

J

T , JUNCTION TEMPERATURE (

°

C)  

J

Figure 6. Typical Holding Current versus Junction  

Temperature  

Figure 7. Gate Trigger Voltage versus Junction  

Temperature  

5000  

4K  

3K  

2K  

1K  

0

100  

V =

 

800 Vpk  

D

T =

 

125

°

C  

J

T =

 

125

°

C  

100

°

C  

75

°

C  

J

10  

I

TM  

1

f =  

t

w

2 t  

w

6f I  

TM  

(di/dt)  

=

c

1000  

V

DRM  

1

10  

100  

1000  

10000  

10  

20  

30  

40  

50  

60  

70  

80  

90 100  

R ,

 

GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)  

G

(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)  

c

Figure 8. Critical Rate of Rise of Off−State Voltage  

(Exponential)  

Figure 9. Critical Rate of Rise of  

Commutating Voltage  

L

L

1N4007  

200 V  

RMS  

ADJUST FOR  

, 60 Hz V  

MEASURE  

I

I

TM  

AC  

CHARGE  

CONTROL  

–

+

TRIGGER  

200 V  

CHARGE  

MT2  

51

W  

1N914  

MT1  

NON‐POLAR  

C

G

L

Note: Component values are for verification of rated (di/dt) .

 

See AN1048 for additional information.  

c

Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)

c  

5

MAC15M, MAC15N  

PACKAGE DIMENSIONS  

TO−220  

CASE 221A−09  

ISSUE AH  

NOTES:  

1. DIMENSIONING

 

AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING

 

DIMENSION: INCH.  

3. DIMENSION

 

Z DEFINES A ZONE WHERE ALL  

BODY AND LEAD IRREGULARITIES ARE  

ALLOWED.  

SEATING  

PLANE  

−T−  

C

S

B

F

T

INCHES  

DIM MIN

 

MAX  

MILLIMETERS  

4

1

MIN  

14.48  

9.66  

4.07  

0.64  

3.61  

2.42  

2.80  

0.36  

12.70  

1.15  

4.83  

2.54  

2.04  

1.15  

5.97  

0.00  

1.15  

—  

MAX  

15.75  

10.53  

4.83  

0.96  

4.09  

2.66  

4.10  

0.61  

14.27  

1.52  

5.33  

3.04  

2.79  

1.39  

6.47  

1.27  

—  

A

B

C

D

F

0.570  

0.380  

0.160  

0.025  

0.142  

0.095  

0.110  

0.014  

0.500  

0.045  

0.190  

0.100  

0.080  

0.045  

0.235  

0.000  

0.045  

—  

0.620  

0.415  

0.190  

0.038  

0.161  

0.105  

0.161  

0.024  

0.562  

0.060  

0.210  

0.120  

0.110  

0.055  

0.255  

0.050  

—  

A

K

Q

Z

2

3

U

H

G

H

J

K

L

N

Q

R

S

T

L

R

J

V

G

U

V

Z

D

0.080  

2.04  

N

STYLE 4:  

PIN 1.

 

MAIN TERMINAL 1  

2. MAIN

 

TERMINAL 2  

3. GATE  

4. MAIN

 

TERMINAL 2  

ON Semiconductor and the  

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  

SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed  

at

. SCILLC

 

reserves the right to make changes without further notice to any products herein.

 

SCILLC makes no warranty, representation  

or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and  

specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

 

“Typical” parameters which may be provided in SCILLC data sheets  

and/or specifications can and do vary in different applications and actual performance may vary over time.

 

All operating parameters, including “Typicals” must be validated for each  

customer application by customer’s technical experts.

 

SCILLC does not convey any license under its patent rights nor the rights of others.

 

SCILLC products are not designed, intended,  

or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  

the failure of the SCILLC product could create a situation where personal injury or death may occur.

 

Should Buyer purchase or use SCILLC products for any such unintended or  

unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  

alleges that SCILLC was negligent regarding the design or manufacture of the part.

 

SCILLC is an Equal Opportunity/Affirmative Action Employer.

 

This literature is subject to all applicable  

copyright laws and is not for resale in any manner.  

PUBLICATION ORDERING INFORMATION  

LITERATURE FULFILLMEN

T

:  

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: 800−282−9855

T

o

ll Free  

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:

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.

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o

ll Free USA/Canada  

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o

ll Free USA/Canada  

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For additional information, please contact your local  

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MAC15M/D  

6