onsemi-MAC16HCD
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MAC16HCD, MAC16HCM,
MAC16HCN
Preferred Device
T
r
iacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full−wave,
silicon gate−controlled devices are needed.
TRIACS
16 AMPERES RMS
400 thru 800 VOLTS
Features
•
High Commutating di/dt and High Immunity to dv/dt @ 125
°
C
•
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
•
Blocking
V
o
ltage to 800
V
o
lts
MT2
MT1
•
On−State Current Rating of 16 Amperes RMS at 80
°
C
•
High Surge Current Capability − 150 Amperes
•
Industry Standard TO−220AB Package for Ease of Design
•
Glass Passivated Junctions for Reliability and Uniformity
•
Pb−Free Packages are Available*
G
MARKING
DIAGRAM
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
MAC16HCxG
AYWW
Rating
Symbol
Value
Unit
V
V
DRM,
(T =
−40 to 125
°
C, Sine Wave,
V
J
RRM
TO−220AB
CASE 221A−09
STYLE 4
50 to 60 Hz, Gate Open)
MAC16HCD
1
400
600
800
2
3
MAC16HCM
MAC16HCN
x
A
Y
= D, M, or N
= Assembly Location
= Year
On−State RMS Current
(Full Cycle Sine Wave 50 to 60 Hz;
I
16
A
A
T(RMS)
T
= 80
°
C)
C
WW =
Work Week
Peak Non-Repetitive Surge Current
I
150
G
= Pb−Free Package
TSM
(One Full Cycle, 60 Hz, T
= 125
°
C)
J
2
2
Circuit Fusing Consideration (t = 8.33 ms)
I t
93
20
A sec
PIN ASSIGNMENT
1
Main
T
e
rminal 1
Peak Gate Power
P
W
W
GM
(Pulse Width
≤
1.0
m
s, T
= 80
°
C)
C
2
3
4
Main
T
e
rminal 2
Gate
Average Gate Power
P
0.5
G(AV)
(t = 8.3 ms, T
= 80
°
C)
C
Main
T
e
rminal 2
Operating Junction
T
e
mperature Range
Storage
T
e
mperature Range
T
−40 to +125
−40 to +150
°
C
°
C
J
T
stg
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device
Package
Shipping
MAC16HCD
TO−220AB
50 Units / Rail
50 Units / Rail
MAC16HCDG
TO−220AB
(Pb−Free)
1. V
and V
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
DRM
RRM
MAC16HCM
TO−220AB
50 Units / Rail
50 Units / Rail
MAC16HCMG
TO−220AB
(Pb−Free)
MAC16HCN
TO−220AB
50 Units / Rail
50 Units / Rail
MAC16HCNG
TO−220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 1
MAC16HC/D
MAC16HCD, MAC16HCM, MAC16HCN
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
R
R
2.2
62.5
°
C/W
q
JC
JA
q
Maximum Lead
T
e
mperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
260
°
C
L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
T =
25
°
C
T =
125
°
C
J
I
,
DRM
−
−
−
−
0.01
2.0
mA
J
(V =
Rated V
, V
DRM
, Gate Open)
RRM
I
RRM
D
ON CHARACTERISTICS
V
−
−
1.6
V
TM
TM
Gate Trigger Current (Continuous dc) (V
= 12 V, R
= 100
W
)
I
mA
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
10
10
10
16
18
22
50
50
50
Holding Current (V
= 12 V, Gate Open, Initiating Current =
“
150 mA)
I
−
20
50
mA
mA
D
H
Latch Current (V
= 12 V, I
= 50 mA)
I
D
G
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
33
36
33
60
80
60
Gate Trigger Voltage (Continuous dc) (V
= 12 V, R
= 100
W
)
V
V
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.5
0.5
0.5
0.80
0.73
0.82
1.5
1.5
1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(di/dt)c
15
−
−
A/ms
(V =
400 V, ITM = 6A, Commutating dv/dt = 20 V/
m
s, CL = 10
m
F
D
Gate Open, T
= 125
°
C, f = 250 Hz, with Snubber) LL = 40 mH
J
Critical Rate of Rise of Off−State Voltage
dv/dt
di/dt
750
−
−
−
−
V/
m
s
A/
m
s
(V =
Rated V
, Exponential Waveform, Gate Open, T
= 125
°
C)
DRM J
D
Repetitive Critical Rate of Rise of On-State Current
10
IPK = 50 A; PW = 40
m
sec; diG/dt = 200 mA/
m
sec; f = 60 Hz
2. Pulse
T
e
st: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
2
MAC16HCD, MAC16HCM, MAC16HCN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
Main
T
e
rminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
I
RRM
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
I
at V
H
DRM
DRM
I
H
Quadrant 3
Main
T
e
rminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
3
−
5
−
40
2
10
5
20 35 50 65 80 95
110 125
5
20 35 50 65 80 95
110 125
−
−
5
−
40
2
10
5
20
35 50 65 80 95
110 125
−ꢀ40 −ꢀ25 −ꢀ10
5
20 35 50
65 80 95
110 125
MAC16HCD, MAC16HCM, MAC16HCN
100
1.10
Q3
1.00
Q3
Q2
Q1
0.90
Q2
Q1
0.80
10
0.70
0.60
0.50
1
−
0.40
−ꢀ40 −ꢀ25 −ꢀ10
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
10
1
100
10
1
Q2
Q1
Q3
MT2 NEGATIVE
MT2 POSITIVE
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 4. Typical Latching Current
versus Junction Temperature
Figure 3. Typical Holding Current
versus Junction Temperature
24
125
DC
22
20
18
16
14
12
10
8
120
115
110
105
100
95
180
°
120
°
60
°
, 30
°
90
°
120
°
90
180
°
90
°
DC
60
°
85
6
30
°
80
4
75
70
2
0
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
, RMS ON-STATE CURRENT (AMP)
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMP)
T(RMS)
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
4
MAC16HCD, MAC16HCM, MAC16HCN
1
100
TYPICAL @
T =
25
°
C
J
MAXIMUM @ T
= 125
°
C
J
10
0.1
MAXIMUM @ T
= 25
°
C
J
1
0.01
0.1
1
10
100
1000
10000
t, TIME (ms)
Figure 8. Typical Thermal Response
0.1
0
0.5
1
1.5
2
2.5
3
3.5
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
Figure 7. Typical On-State Characteristics
5
MAC16HCD, MAC16HCM, MAC16HCN
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
INCHES
DIM MIN
MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 4:
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
4. MAIN
TERMINAL 2
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal
Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800−282−9855
T
o
ll Free
USA/Canada
Literature Distribution Center for ON Semiconductor
P
.
O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone
: 480−829−7710 or 800−344−3860
T
o
ll Free USA/Canada
Fax
: 480−829−7709 or 800−344−3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
Japan
: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku,
T
o
kyo, Japan 153−0051
Phone
: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MAC16HC/D
