onsemi-MAC16M
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MAC16DG, MAC16MG,
MAC16NG
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full−wave ac control applications
where high noise immunity and high commutating di/dt are required.
TRIACS
Features
16 AMPERES RMS
400 thru 800 VOLTS
•
Blocking
V
o
ltage to 800
V
o
lts
•
On−State Current Rating of 16 Amperes RMS at 80
°
C
•
Uniform Gate Trigger Currents in Three Quadrants
•
High Immunity to dv/dt − 500 V/
m
s minimum at 125
°
C
•
Minimizes Snubber Networks for Protection
•
Industry Standard TO−220 Package
MT2
MT1
G
MARKING
DIAGRAM
•
High Commutating di/dt − 9.0 A/ms minimum at 125
°
C
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Symbol
Value
Unit
MAC16xG
AYWW
Peak Repetitive Off−State Voltage (Note 1)
V
DRM,
V
(T =
−40 to 125
°
C, Sine Wave,
V
RRM
TO−220
CASE 221A
STYLE 4
J
50 to 60 Hz, Gate Open)
MAC16D
1
2
400
600
800
3
MAC16M
MAC16N
x
= D, M, or N
A
Y
= Assembly Location
=
Y
e
ar
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
= 80
°
C)
I
16
A
A
T(RMS)
C
WW =
Work Week
G
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
150
TSM
= Pb−Free Package
T =
125
°
C)
J
2
2
PIN ASSIGNMENT
Main
T
e
rminal 1
Main
T
e
rminal 2
Gate
Circuit Fusing Consideration (t = 8.3 ms)
I t
93
20
A sec
1
Peak Gate Power
P
W
W
GM
(Pulse Width
≤
1.0
m
s, T
= 80
°
C)
C
2
3
4
Average Gate Power
P
0.5
G(AV)
(t = 8.3 ms, T
= 80
°
C)
C
Main
T
e
rminal 2
Operating Junction
T
e
mperature Range
Storage
T
e
mperature Range
T
J
−40 to +125
−40 to +150
°
C
°
C
T
stg
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
Package
Shipping
1. V
and V
for all types can be applied on a continuous basis. Blocking
MAC16DG
TO−220
50 Units / Rail
DRM
RRM
(Pb−Free)
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
MAC16MG
MAC16NG
TO−220
(Pb−Free)
50 Units / Rail
50 Units / Rail
TO−220
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2015 − Rev. 4
MAC16D/D
MAC16DG, MAC16MG, MAC16NG
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
R
R
2.0
62.5
°
C/W
q
q
JC
JA
Maximum Lead
T
e
mperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
,
mA
DRM
(V =
Rated V
, V
RRM
; Gate Open)
T =
25
°
C
T =
125
°
C
J
I
RRM
−
−
−
−
0.01
2.0
D
DRM
J
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I 21
A Peak)
Gate Trigger Current (Continuous dc) (V
= 12
V
, R
=
1
00
W
)
V
−
1.2
1.6
V
TM
=
TM
I
mA
D
L
GT
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
10
10
10
16
18
22
50
50
50
Holding Current
(V =
12
V
,
G
ate Open, Initiating Current =
150 mA)
D
I
−
20
50
mA
mA
H
Latching Current (V
= 24
V
, I
=
5
0 mA)
I
D
G
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
−
33
36
33
50
80
50
Gate Trigger Voltage (V
= 12 V, R
= 100
W
)
V
GT
V
D
L
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
0.5
0.5
0.5
0.75
0.72
0.82
1.5
1.5
1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(V =
400
V
, I
=
6
.0 A, Commutating dv/dt = 24 V/
m
s,
(di/dt)
9.0
−
−
A/ms
c
D
TM
Gate Open, T
= 125
°
C, f = 250 Hz, No Snubber)
J
C =
10
m
F
L
L =
40 mH
L
Critical Rate of Rise of Off-State Voltage
dv/dt
500
−
−
V/
m
s
(V =
Rated V
, Exponential Waveform,
D
DRM
Gate Open, T
= 125
°
C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates
Pulse
T
e
st: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
2
MAC16DG, MAC16MG, MAC16NG
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
Main
T
e
rminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
H
I
at V
DRM
DRM
I
H
Quadrant 3
Main
T
e
rminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
3
MAC16DG, MAC16MG, MAC16NG
125
120
115
110
105
100
95
20
18
16
DC
180
°
120
°
90
°
α
= 30 and 60
°
14
60
°
α
= 90
°
12
10
α
= 180
°
α
= 120
°
α
= 30
°
8
6
4
2
0
DC
90
85
80
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
, RMS ON‐STATE CURRENT (AMP)
I
T(RMS)
, ON‐STATE CURRENT (AMP)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
100
1
TYPICAL AT
T =
25
°
C
MAXIMUM @ T
= 125
°
C
J
J
0.1
10
0.01
4
0.1
1
10
100
t, TIME (ms)
1000
1ꢀ·ꢀ10
Figure 4. Thermal Response
MAXIMUM @ T
= 25
°
C
40
J
1
MT2 POSITIVE
MT2 NEGATIVE
0.1
5
-ꢀ40
0
0.5
1
1.5
2
2.5
3
3.5
4
-ꢀ10
20
50
80
110 125
V , INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
T
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 3. On-State Characteristics
Figure 5. Hold Current Variation
4
MAC16DG, MAC16MG, MAC16NG
100
1
V =
12 V
D
R =
100
W
L
Q2
Q3
Q1
Q1
Q3
Q2
V =
12 V
D
R =
100
W
L
1
-ꢀ40
0.5
-ꢀ40
-ꢀ10
20
50
80
110 125
-ꢀ10
+20
50
80
110 125
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Gate Trigger Voltage Variation
Figure 6. Gate Trigger Current Variation
5000
4K
3K
2K
1K
0
100
V =
800 Vpk
D
T =
125
°
C
J
T =
125
°
C
100
°
C
75
°
C
J
10
I
TM
1
f =
t
w
2 t
w
6f I
TM
(di/dt)
=
c
1000
V
DRM
1
10
10
100
1000
10000
20
30
40
50
60
70
80
90
100
R ,
GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
–
+
TRIGGER
200 V
CHARGE
MT2
G
1N914
51
W
MT1
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt) .
See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
5
MAC16DG, MAC16MG, MAC16NG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
4. MAIN
TERMINAL 2
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
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copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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T
:
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T
o
ll Free
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.
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o
ll Free USA/Canada
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o
ll Free USA/Canada
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For additional information, please contact your local
Sales Representative
MAC16D/D
