onsemi-MAC228A8T
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MAC228A Series
Sensitive Gate
T
r
iacs
Silicon Bidirectional Thyristors
Designed primarily for industrial and consumer applications for
full
−
wave control of AC loads such as appliance controls, heater
controls, motor controls, and other power switching applications.
Features
TRIACS
8 AMPERES RMS
200
−
800 VOLTS
•
Sensitive Gate Triggering in 3 Modes for AC Triggering on
Sinking Current Sources
•
Four Mode Triggering for Drive Circuits that Source Current
•
All Diffused and Glass
−
Passivated Junctions for Parameter
Uniformity and Stability
MT2
MT1
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance and High Heat Dissipation
G
•
Center Gate Geometry for Uniform Current Spreading
•
These Devices are Pb
−
Free and are RoHS Compliant*
MARKING
DIAGRAM
4
MAC228AxxG
AYWW
1
2
3
TO
−
220AB
CASE 221A
STYLE 4
xx
A
Y
= 4, 6, 8, or 10
= Assembly Location (Optional)*
= Year
WW
G
= Work Week
= Pb
−
Free Package
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012
−
Rev. 7
MAC228A/D
MAC228A Series
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Characteristic
Symbol
Value
Unit
,
(T =
−
40 to 110
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
V
V
DRM,
RRM
MAC228A4
MAC228A6
MAC228A8
MAC228A10
V
200
400
600
800
J
On-State RMS Current, (T
= 80
°
C)
−
Full Cycle Sine Wave 50 to 60 Hz
I
8.0
80
A
A
C
T(RMS)
Peak Non
−
Repetitive Surge Current
I
TSM
(One Full Cycle Sine Wave, 60 Hz, T
= 110
°
C)
J
2
2
Circuit Fusing Considerations, (t = 8.3 ms)
I t
26
“
2.0
“
10
A s
Peak Gate Current, (t
v
2
m
s, T
= 80
°
C)
I
A
V
C
GM
Peak Gate Voltage, (t
v
2
m
s, T
= 80
°
C)
V
C
GM
GM
Peak Gate Power, (t
v
2
m
s, T
= 80
°
C)
P
20
W
C
Average Gate Power, (t
v
8.3 ms, T
= 80
°
C)
P
G(AV)
0.5
W
C
Operating Junction
T
e
mperature Range
Storage
T
e
mperature Range
Mounting
T
o
rque
T
−
40 to 110
−
40 to 150
8.0
°
C
°
C
in lb
J
T
stg
−
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
and V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
DRM
RRM
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
2.0
Unit
°
C/W
°
C/W
°
C
Thermal Resistance
−
Junction
−
to
−
Case
Thermal Resistance
−
Junction
−
to
−
Ambient
Maximum Lead
T
e
mperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
R
q
JC
R
q
JA
62.5
260
T
L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current, (V
= Rated V
, V
; Gate Open)
T =
25
°
C
I ,
DRM
RRM
−
−
−
−
10
2.0
m
A
mA
D
DRM RRM
J
T =
110
°
C
I
J
ON CHARACTERISTICS
Peak On-State Voltage, (I
=
“
11 A Peak, Pulse Width
v
2 ms, Duty Cycle
v
2%)
V
TM
−
−
1.8
V
TM
Gate Trigger Current (Continuous DC), (V
= 12 V, R
= 100
W
)
I
mA
D
L
GT
MT2(+), G(+); MT2(+), G(
−
); MT2(
−
), G(
−
)
−
−
−
−
5.0
10
MT2(
−
), G(+)
Gate Trigger Voltage (Continuous DC), (V
= 12 V, R
= 100
W
)
V
V
V
D
L
GT
MT2(+), G(+); MT2(+), G(
−
); MT2(
−
), G(
−
)
−
−
−
−
2.0
2.5
MT2(
−
), G(+)
Gate Non
−
Trigger Voltage (Continuous DC), (V
= 12 V, T
= 110
°
C, R
= 100
W
)
V
GD
0.2
−
−
D
C
L
All Four Quadrants
Holding Current, (V
= 12 Vdc, Initiating Current =
“
200 mA, Gate Open)
I
−
−
−
15
mA
D
H
Gate
−
Controlled Turn
−
On Time, (V
= Rated V
, I
= 16 A Peak, I
= 30 mA)
t
gt
1.5
−
m
s
D
DRM TM
G
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage,
dv/dt
−
−
25
−
−
V/
m
s
V/
m
s
(V =
Rated V
, Exponential Waveform, T
= 110
°
C)
D
DRM
C
Critical Rate of Rise of Commutation Voltage, (V
= Rated V
, I
= 11.3 A,
DRM TM
dv/dt(c)
5.0
D
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T
= 80
°
C)
C
2
MAC228A Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
Main
T
e
rminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
DRM
off state
TM
I
H
I
at V
DRM
I
H
Quadrant 3
Main
T
e
rminal 2
−
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(
−
) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(
−
) MT2
(
−
) MT2
Quadrant III
Quadrant IV
(+) I
(
−
) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in
−
phase signals (using standard AC lines) quadrants I and III are used.
3
MAC228A Series
110
104
10
dc
a
a
= 30
°
a
= 180
°
120
°
8.0
a
60
°
90
°
a
= CONDUCTION ANGLE
98
92
86
80
120
°
6.0
4.0
90
°
180
°
T
≈
110
°
C
J
60
°
30
°
a
a
2.0
0
dc
a
= CONDUCTION ANGLE
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
, RMS ON-STATE CURRENT (AMP)
I
, RMS ON-STATE CURRENT (AMP)
T(RMS)
T(RMS)
Figure 1. RMS Current Derating
Figure 2. On
−
State Power Dissipation
ORDERING INFORMATION
Device
†
Package
Shipping
MAC228A4
TO
−
220
500 Units / Bulk
500 Units / Bulk
MAC228A4G
TO
−
220
(Pb
−
Free)
MAC228A6
TO
−
220
500 Units / Bulk
500 Units / Bulk
MAC228A6G
TO
−
220
(Pb
−
Free)
MAC228A6T
TO
−
220
50 Units / Rail
50 Units / Rail
MAC228A6TG
TO
−
220
(Pb
−
Free)
MAC228A8
TO
−
220
500 Units / Bulk
500 Units / Bulk
MAC228A8G
TO
−
220
(Pb
−
Free)
MAC228A8T
TO
−
220
50 Units / Rail
50 Units / Rail
MAC228A8TG
TO
−
220
(Pb
−
Free)
MAC228A10
TO
−
220
500 Units / Bulk
500 Units / Bulk
MAC228A10G
TO
−
220
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
4
MAC228A Series
PACKAGE DIMENSIONS
TO
−
220
CASE 221A
−
09
ISSUE AG
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−
T
−
C
S
B
F
T
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.28
4.82
0.91
4.09
2.66
4.10
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.405
0.190
0.036
0.161
0.105
0.161
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
J
V
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
4. MAIN
TERMINAL 2
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf.
SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLIC
A
T
ION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
P
.
O. Box 5163, Denver, Colorado 80217 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MAC228A/D
