onsemi-MC1413D
| Part # | onsemi-MC1413D |
Download  | onsemi-MC1413D |
MC1413, MC1413B,
NCV1413B
High Voltage, High Current
Darlington
T
r
ansistor Arrays
The seven NPN Darlington connected transistors in these arrays are
well suited for driving lamps, relays, or printer hammers in a variety of
industrial and consumer applications. Their high breakdown voltage
and internal suppression diodes insure freedom from problems
associated with inductive loads. Peak inrush currents to 500 mA
permit them to drive incandescent lamps.
PDIP−16
P SUFFIX
CASE 648
16
The MC1413, B with a 2.7 k
W
series input resistor is well suited for
systems utilizing a 5.0 V TTL or CMOS Logic.
1
SOIC−16
D SUFFIX
CASE 751B
Features
•
Pb−Free Packages are Available*
16
•
NCV Prefix for Automotive and Other Applications Requiring Site
1
and Control Changes
ORDERING INFORMATION
1/7 MC1413, B
†
Device
MC1413D
Package
Shipping
2.7 k
5.0 k
Pin 9
SOIC−16
48 Units/Rail
48 Units/Tube
MC1413DG
SOIC−16
(Pb−Free)
3.0 k
MC1413DR2
SOIC−16 2500
T
a
pe & Reel
MC1413DR2G
SOIC−16 2500
T
a
pe & Reel
(Pb−Free)
Figure 1. Representative Schematic Diagram
MC1413P
PDIP−16
25 Units/Rail
25 Units/Rail
MC1413PG
PDIP−16
(Pb−Free)
1
2
3
4
5
6
16
15
14
13
12
11
10
9
MC1413BD
SOIC−16
48 Units/Rail
48 Units/Rail
MC1413BDG
SOIC−16
(Pb−Free)
MC1413BDR2
SOIC−16 2500
T
a
pe & Reel
MC1413BDR2G
SOIC−16 2500
T
a
pe & Reel
(Pb−Free)
MC1413BP
PDIP−16
25 Units/Rail
25 Units/Rail
MC1413BPG
PDIP−16
(Pb−Free)
NCV1413BDR2
SOIC−16 2500
T
a
pe & Reel
NCV1413BDR2G SOIC−16 2500
T
a
pe & Reel
(Pb−Free)
7
8
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
(
T
o
p View)
DEVICE MARKING INFORMATION
See general marking information in the device marking
Figure 2. PIN CONNECTIONS
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 8
MC1413/D
MC1413, MC1413B, NCV1413B
MAXIMUM RATINGS
(T =
25
°
C, and rating apply to any one device in the package, unless otherwise noted.)
A
Rating
Symbol
Value
50
Unit
V
Output Voltage
V
O
Input Voltage
V
I
30
V
Collector Current − Continuous
Base Current − Continuous
I
500
25
mA
mA
°
C
C
I
B
Operating Ambient
T
e
mperature Range
T
A
MC1413
−20 to +85
−40 to +85
−40 to +125
MC1413B
NCV1413B
Storage
T
e
mperature Range
Junction
T
e
mperature
T
−55 to +150
150
°
C
°
C
stg
T
J
Thermal Resistance, Junction−to−Ambient
Case 648, P Suffix
R
°
C/W
q
q
JA
67
Case 751B, D Suffix
100
Thermal Resistance, Junction−to−Case
Case 648, P Suffix
R
°
C/W
JC
22
20
Case 751B, D Suffix
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
V
2000
400
Charged Device Model (CDM)
1500
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2
MC1413, MC1413B, NCV1413B
ELECTRICAL CHARACTERISTICS
(T =
25
°
C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Leakage Current
I
m
A
CEX
(V =
50
V
, T
=
+
85
°
C)
All Types
All Types
−
−
−
−
100
50
O
A
(V =
50
V
, T
=
+
25
°
C)
O
A
Collector−Emitter Saturation Voltage
(I =
350 mA, I
= 500
m
A)
V
V
CE(sat)
All Types
All Types
All Types
−
−
−
1.1
0.95
0.85
1.6
1.3
1.1
C
B
(I =
200 mA, I
= 350
m
A)
C
B
(I =
100 mA, I
= 250
m
A)
C
B
Input Current − On Condition
(V =
3.85 V)
I
I
mA
V
I(on)
MC1413, B
−
0.93
1.35
Input Voltage − On Condition
V
I(on)
(V =
2.0
V
, I
=
2
00 mA)
MC1413, B
MC1413, B
MC1413, B
−
−
−
−
−
−
2.4
2.7
3.0
CE
C
(V =
2.0
V
, I
=
2
50 mA)
CE
C
(V =
2.0
V
, I
=
3
00 mA)
CE
C
Input Current − Off Condition
All Types
I
50
100
−
m
A
I(off)
(I =
500
m
A, T
= 85
°
C)
C
A
DC Current Gain
h
FE
1000
−
−
−
(V =
2.0
V
, I
=
3
50 mA)
CE
C
Input Capacitance
C
−
−
15
30
pF
I
Turn−On Delay Time
t
on
0.25
1.0
m
s
(50% E
to 50% E
)
I
O
Turn−Off Delay Time
(50% E
to 50% E
)
t
−
0.25
1.0
m
s
m
A
V
off
I
O
Clamp Diode Leakage Current
(V =
50 V)
R
T =
+25
°
C
T =
+85
°
C
A
I
−
−
−
−
50
100
A
R
Clamp Diode Forward Voltage
V
−
1.5
2.0
F
(I =
350 mA)
F
NOTE: NCV1413B
T =
−40
°
C, T
= +125
°
C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
low
high
site and change control.
3
MC1413, MC1413B, NCV1413B
TYPICAL PERFORMANCE CURVES − T
A
= 25
°
C
400
300
200
400
300
200
100
0
All Types
MC1413, B
100
0
0
1.0
2.0
3.0 4.0 5.0
8.0
9.0
10
11
12
0
50
100
150
200
250
300
350
400
V , INPUT VOLTAGE (V)
I
I , INPUT CURRENT (
m
A)
I
Figure 3. Output Current versus Input Voltage
Figure 4. Output Current versus Input Current
800
700
2.5
PIN 13
2.0
1.5
600
500
400
300
200
PIN 10
1 Output Conducting at a Time
PIN 16
Maximum
Typical
1.0
0.5
0
All Types
100
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
, SATURATION VOLTAGE (V)
V , INPUT VOLTAGE (V)
I
CE(sat)
Figure 5. Typical Output Characteristics
Figure 6. Input Characteristics − MC1413, B
1000
700
1
2
3
500
300
200
4
5
6
7
100
10
20
30
% DUTY CYCLE
50
70
100
Figure 7. Maximum Collector Current
versus Duty Cycle
(and Number of Drivers in Use)
4
MC1413, MC1413B, NCV1413B
MARKING DIAGRAMS
PDIP−16
P SUFFIX
CASE 648
16
16
MC1413P
ULN2003A
MC1413BP
ULQ2003A
AWLYYWWG
AWLYYWWG
1
1
SOIC−16
D SUFFIX
CASE 751B
16
1
16
1
16
MC1413DG
AWLYWW
MC1413BDG
AWLYWW
NCV1413BDG
AWLYWW
1
A
= Assembly Location
WL =
Wafer Lot
Y
Y
, Y
= Y
e
ar
WW =
Work Week
G
= Pb−Free Package
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP
−
16
CASE 648
−
08
ISSUE V
DATE 22 APR 2015
16
1
SCALE 1:1
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: INCHES.
D
A
3. DIMENSIONS
A, A1 AND L ARE MEASURED WITH THE PACK-
AGE SEATED IN JEDEC SEATING PLANE GAUGE GS
−
3.
4. DIMENSIONS
D, D1 AND E1 DO NOT INCLUDE MOLD FLASH
OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE
NOT TO EXCEED 0.10 INCH.
5. DIMENSION
E IS MEASURED AT A POINT 0.015 BELOW DATUM
PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR
TO DATUM C.
16
9
E
H
E1
6. DIMENSION
eB IS MEASURED AT THE LEAD TIPS WITH THE
LEADS UNCONSTRAINED.
7. DATUM
PLANE H IS COINCIDENT WITH THE BOTTOM OF THE
LEADS, WHERE THE LEADS EXIT THE BOD
Y
.
8. PACKAGE
CONTOUR IS OPTIONAL (ROUNDED OR SQUARE
CORNERS).
1
8
c
b2
NOTE 8
B
END VIEW
TOP VIEW
WITH LEADS CONSTRAINED
NOTE 5
A2
A
INCHES
DIM MIN
MAX
−−−−
A1
0.015
MILLIMETERS
e/2
MIN
−−−
0.38
2.92
0.35
MAX
5.33
−−−
4.95
0.56
NOTE 3
A
0.210
−−−−
L
A2
0.115 0.195
b
b2
C
0.014 0.022
0.060 TYP
0.008 0.014
1.52 TYP
A1
D1
0.20
0.36
SEATING
C
M
PLANE
D
0.735 0.775 18.67 19.69
D1
0.005
0.300 0.325
E1
0.240 0.280
−−−−
0.13
7.62
6.10
−−−
8.26
7.11
E
eB
e
END VIEW
NOTE 6
16X
b
e
eB
L
0.100 BSC
−−−−
0.430
0.115 0.150
−−−−
1
0
°
2.54 BSC
−−−
2.92
−−−
10.92
3.81
1
0
°
M
M
M
B
0.010
C A
SIDE VIEW
M
GENERIC
MARKING DIAGRAM*
16
1
XXXXXXXXXXXX
XXXXXXXXXXXX
AWLYYWWG
STYLE 1:
STYLE 2:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. CATHODE
9. ANODE
PIN 1.
COMMON DRAIN
2. COMMON
DRAIN
3. COMMON
DRAIN
4. COMMON
DRAIN
5. COMMON
DRAIN
6. COMMON
DRAIN
7. COMMON
DRAIN
8. COMMON
DRAIN
9. GATE
XXXXX =
Specific Device Code
A
WL
YY
WW
G
= Assembly Location
= Wafer Lot
=
Y
e
ar
= Work Week
= Pb
−
Free Package
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
15. ANODE
16. ANODE
10. SOURCE
11. GATE
12. SOURCE
13. GATE
14. SOURCE
15. GATE
16. SOURCE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42431B
PDIP
−
16
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC
−
16
CASE 751B
−
05
ISSUE K
DATE 29 DEC 2006
SCALE 1:1
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
−
A
−
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSIONS
A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM
MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION
D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
16
9
8
−
B
−
P
8 PL
M
S
B
0.25 (0.010)
1
MILLIMETERS
INCHES
MIN
0.386
DIM MIN
MAX
MAX
0.393
0.157
0.068
0.019
0.049
A
B
C
D
F
9.80
3.80
1.35
0.35
0.40
10.00
G
4.00 0.150
1.75 0.054
0.49 0.014
1.25 0.016
F
R
X 45
K
_
G
J
1.27 BSC
0.050 BSC
0.19
0.10
0
0.25 0.008
0.25 0.004
0.009
0.009
7
K
M
P
R
C
7
0
_
_
_
_
−
T
−
SEATING
PLANE
5.80
0.25
6.20 0.229
0.50 0.010
0.244
0.019
J
M
D
16 PL
M
S
S
A
0.25 (0.010)
T
B
STYLE 1:
STYLE 2:
STYLE 3:
STYLE 4:
PIN 1.
COLLECTOR
2. BASE
3. EMITTER
4. NO
CONNECTION
5. EMITTER
6. BASE
7. COLLECTOR
8. COLLECTOR
9. BASE
10. EMITTER
11. NO
CONNECTION
12. EMITTER
13. BASE
PIN 1.
CATHODE
2. ANODE
3. NO
CONNECTION
4. CATHODE
5. CATHODE
6. NO
CONNECTION
7. ANODE
8. CATHODE
9. CATHODE
10. ANODE
11. NO
CONNECTION
12. CATHODE
13. CATHODE
14. NO
CONNECTION
15. ANODE
PIN 1.
COLLECTOR, DYE #1
2. BASE,
#1
3. EMITTER,
#1
4. COLLECTOR,
#1
5. COLLECTOR,
#2
6. BASE,
#2
PIN 1.
COLLECTOR, DYE #1
2. COLLECTOR,
#1
3. COLLECTOR,
#2
4. COLLECTOR,
#2
5. COLLECTOR,
#3
6. COLLECTOR,
#3
7. COLLECTOR,
#4
8. COLLECTOR,
#4
9. BASE,
#4
10. EMITTER,
#4
11. BASE,
#3
12. EMITTER,
#3
13. BASE,
#2
7. EMITTER,
#2
8. COLLECTOR,
#2
9. COLLECTOR,
#3
10. BASE,
#3
11. EMITTER,
#3
12. COLLECTOR,
#3
13. COLLECTOR,
#4
14. BASE,
#4
SOLDERING FOOTPRINT
14. COLLECTOR
15. EMITTER
16. COLLECTOR
14. EMITTER,
#2
15. BASE,
#1
16. EMITTER,
#1
15. EMITTER,
#4
16. COLLECTOR,
#4
8X
6.40
16. CATHODE
16X
1.12
STYLE 5:
STYLE 6:
STYLE 7:
PIN 1.
SOURCE N‐CH
PIN 1.
DRAIN, DYE #1
2. DRAIN,
#1
3. DRAIN,
#2
4. DRAIN,
#2
5. DRAIN,
#3
6. DRAIN,
#3
7. DRAIN,
#4
8. DRAIN,
#4
9. GATE,
#4
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. CATHODE
9. ANODE
2. COMMON
DRAIN (OUTPUT)
3. COMMON
DRAIN (OUTPUT)
4. GATE
P‐CH
5. COMMON
DRAIN (OUTPUT)
6. COMMON
DRAIN (OUTPUT)
7. COMMON
DRAIN (OUTPUT)
8. SOURCE
P‐CH
1
16
16X
0.58
9. SOURCE
P‐CH
10. SOURCE,
#4
11. GATE,
#3
12. SOURCE,
#3
13. GATE,
#2
14. SOURCE,
#2
15. GATE,
#1
16. SOURCE,
#1
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
15. ANODE
16. ANODE
10. COMMON
DRAIN (OUTPUT)
11. COMMON
DRAIN (OUTPUT)
12. COMMON
DRAIN (OUTPUT)
13. GATE
N‐CH
14. COMMON
DRAIN (OUTPUT)
15. COMMON
DRAIN (OUTPUT)
16. SOURCE
N‐CH
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42566B
SOIC
−
16
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
