onsemi-MCH6601-TL-E

Order

i

n

g number : EN6458D  

MCH6601  

P-Channel Power MOSFET  

–

–

Ω

30V, 0.2A,

 

10.4 ,

 

Dual MCPH6  

F

e

atures  

•

Low ON-resistance  

•

•

•

Ultrahigh-speed switching  

1.5V drive  

Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting  

Spec

i

fi

c

at

i

o

ns  

at Ta=25°C  

A

b

so

l

u

te Maximum Rat

i

n

gs  

Pa

r

a

meter  

Dr

a

i

n

t

o Source

V

o

l

t

age  

Gate to Source

V

o

l

t

age  

Dr

a

i

n

C

urrent

(

D

C

)  

S

y

mbol  

Cond

i

t

i

o

ns  

Rat

i

n

gs  

Unit  

V

V

–

–

30  

±10  

–

–

0.2  

–

–

0.8  

0.8  

D

S

S  

V

V

GSS  

I

A

D

Dr

a

i

n

C

urrent

(

P

u

l

s

e)  

All

o

wab

l

e

P

ower

D

i

s

s

i

p

at

i

o

n  

Channel

T

e

mperature  

Storage

T

e

mperature  

I

PW 10 s,

 

duty cyc

l

e

 

1

%  

A

≤

μ

≤

DP  

P

When mounted on ceram

i

c

s

ubstrate

(

9

00mm

2

0.8mm) 1un

i

t  

W

°C  

°C  

×

D

T

c

h  

150  

T

s

tg  

–

–

55 to +150  

This product is designed to “ESD immunity < 200V ”, so please take care when handling.  

*

Machine Model  

*

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  

Package

D

i

m

ens

i

o

ns  

unit : mm (typ)  

Product &

 

Package

I

n

f

o

rmat

i

o

n  

• Package  

: MCPH6  

7022A-006  

• JEITA, JEDEC  

: SC-88, SC-70-6, SOT-363  

• Minimum Packing Quantity

 

: 3,000 pcs./reel  

2.0  

0.15  

MCH6601-TL-E  

Pack

i

n

g

T

y

p

e :

T

L  

M

a

rk

i

n

g  

FA  

6

5

4

3

0 to 0.02  

TL  

1

2

0.65  

0.3  

El

e

ctr

i

c

al Connect

i

o

n  

6

5

4

1 :

S

ource1  

2 : Gate1  

3 : Dr

a

i

n

2  

4 :

S

ource2  

5 : Gate2  

1

2

3

4

6 : Dr

a

i

n

1  

1

2

3

MCPH6  

6

5

Semiconductor Components Industries, LLC, 2013  

August, 2013  

82813 TKIM TC-00002985/70412 TKIM/42806 MSIM TB-00002289/

 

No.6458-1/6  

O3105PE MSIM TB-00001865/N2499 TSIM TA-2457  

MCH6601  

at Ta=25°C  

El

e

ctr

i

c

al Character

i

s

t

i

c

s  

Rat

i

n

gs  

typ  

Pa

r

a

meter  

S

y

mbol  

Cond

i

t

i

o

ns  

Unit  

V

m

i

n  

–

–

30  

max  

Dr

a

i

n

t

o Source Breakdown

V

o

l

t

age  

Z

e

r

o

-Gate

V

o

l

t

age Dra

i

n

C

urrent  

Gate to Source

L

e

akage Current  

Cuto

f

f

V

o

l

t

age  

V

I =

–

–

1m

A

,

 

V

=

0V  

D GS  

(

B

R

)

D

S

S  

I

V

=

–

–

30

V

, V

 

=

0V  

–

–

1  

A

A

μ

D

S

S  

DS GS  

I

V

=±8

V

, V

 

=

0V  

±10  

μ

GSS  

GS DS  

V

(

o

f

f)  

|

V

DS  

=

–

–

10

V

, I

 

=

–

–

100  

A

μ

–

–

0.4  

80  

–

–

1.4  

V

GS  

yfs  

D

Forward

T

r

a

ns

f

e

r

A

d

m

i

t

tance  

V

DS  

=

–

–

10

V

, I

 

=

–

–

50mA  

D

110  

8

mS  

Ω

|

R

R

R

(

o

n

)

1  

(

o

n

)

2  

(

o

n

)

3  

I

=

–

–

50m

A

, V

 

=

–

–

4V  

10.4  

15.4  

54  

DS  

DS  

DS  

D GS  

Stat

i

c Dr

a

i

n

t

o Source On-State Res

i

s

tance  

I

D

=

–

–

30m

A

, V

 

=

–

–

2.5V  

GS  

11  

Ω

I

D

=

–

–

1m

A

, V

 

=

–

–

1.5V  

GS  

27  

Ω

I

n

put Capac

i

t

ance  

C

i

s

s  

7.5  

pF  

pF  

pF  

ns  

ns  

ns  

ns  

nC  

nC  

nC  

V

Output Capac

i

t

ance  

Reverse

T

r

a

ns

f

e

r Capac

i

t

ance  

T

u

rn-ON De

l

a

y

T

i

m

e  

Ri

s

e

T

i

m

e  

Coss  

Crss  

V

=

–

–

10

V

,

f

=1MHz  

5.7  

DS  

1.8  

t

t

t

t

(

o

n)  

24  

d

r

55  

See spec

i

fi

e

d

T

e

st C

i

r

c

u

i

t

.  

T

u

rn-OFF De

l

a

y

T

i

m

e  

Fa

l

l Ti

m

e  

(

o

f

f)  

120  

130  

1.43  

0.18  

0.25  

–

–

0.83  

d

f

T

o

tal Gate Cha

r

g

e  

Qg  

Gate to Source Charge  

Gate to Dra

i

n “Mill

e

r

” Charge  

Di

o

de Forward

V

o

l

t

age  

Qgs  

Qgd  

V

DS  

=

–

–

10

V

, V

 

=

–

–

10

V

, I

 

=

–

–

100mA  

GS  

D

V

SD  

I =

–

–

100m

A

,

 

V

=

0V  

S GS  

–

–

1.2  

Sw

i

t

ch

i

n

g

T

i

m

e

T

e

st C

i

r

c

u

i

t  

V

=

–

–

15V  

DD  

V

I

=

–

–

50mA  

L

IN  

D

0V  

–

–

4V  

R =300

Ω

 

V

D

OUT  

V

IN  

PW=10

μ

s  

D.C.

≤

1%  

G

P

.

G  

50

Ω  

S

MCH6601  

Order

i

n

g

I

n

f

o

rmat

i

o

n  

D

e

v

i

c

e  

Package  

MCPH6  

Sh

i

p

p

i

n

g  

3,000pcs./reel  

memo  

MCH6601-TL-E  

Pb-Free  

No.6458-2/6  

MCH6601  

I

D

— V  

DS  

I

D

— V  

GS  

–

–

0.20  

–

–

0.18  

–

–

0.16  

–

–

0.14  

–

–

0.10  

V

=

–

–

10V  

–

–

3.5V  

DS  

–

–

0.09  

–

–

0.08  

–

–

0.07  

–

–

0.06  

–

–

0.05  

–

–

0.04  

–

–

0.03  

–

–

0.02  

25

°

C  

–

–

2.0V  

–

–

0.12  

–

–

0.10  

–

–

0.08  

–

–

0.06  

–

–

0.04  

V

=

–

–

1.5V  

GS  

–

–

0.01  

0

–

–

0.02  

0

0

–

–

0.2

–

–

0.4

–

–

0.6

–

–

0.8

–

–

1.0

–

–

1.2

–

–

1.4

 

–

–

1.6

–

–

1.8

–

–

2.0  

0

–

–

0.5  

–

–

1.0  

–

–

1.5  

–

–

2.0  

–

–

2.5  

–

–

3.0  

–

–

3.5  

–

–

4.0  

IT00077  

Gate to Source

V

o

ltage, V

 

–

– V  

GS  

IT00078  

Drain to Source

V

o

ltage, V  

— V  

DS  

R

(on)

–

– I  

R

(on)

–

– V  

GS  

DS  

D

DS  

100  

30  

25  

20  

15  

10  

V

=

–

–

4V  

Ta=25

°

C  

GS  

7

5

3

2

Ta=75

°

C  

–

–

25

°

C  

10  

–

–

50mA  

7

5

I =

 

–

–

30mA  

D

25

°

C  

3

2

5

0

1.0  

2

2

2

3

5

7

2

3

0

–

–

1  

–

–

2  

–

–

3  

–

–

4  

–

–

5  

–

–

6  

–

–

7  

–

–

8  

–

–

9  

–

–

10  

–

–

0.01  

–

–

0.1  

IT00079  

IT00080  

Gate to Source

V

o

ltage, V  

— V  

Drain Current, I

 

–

– A  

D

R

GS  

R

(on)

–

– I  

(on)

–

– I  

DS D  

DS  

D

1000  

100  

V

=

–

–

1.5V  

V

=

–

–

2.5V  

GS  

GS  

7

5

7

5

3

2

3

2

Ta=75

°

C  

25

°

C  

100  

10  

7

5

7

5

–

–

25

°

C  

Ta=75

°

C  

–

–

25

°

C  

3

2

3

2

25

°

C  

1.0  

10  

–

–

0.0001  

2

3

5

7

2

3

3

5

7

2

3

–

–

0.01  

–

–

0.1  

–

–

0.001  

IT00081  

IT00082  

Drain Current, I

 

–

– A  

Drain Current, I

 

–

– A  

D

D

R

(on)

–

– Ta  

|

y

fs

|

— I  

DS  

D

1.0  

18  

16  

V

=

–

–

10V  

DS  

7

5

14  

12  

3

2

25

°

C  

0.1  

10  

8

7

5

6

3

2

4

2

0.01  

–

–

0.01  

3

5

7

2

3

–

–

60

–

–

40

–

–

20  

0

20  

40  

60  

80 100

 

120 140 160  

–

–

0.1  

IT00083  

IT00084  

Ambient Temperature, Ta

 

–

–

°

C  

Drain Current, I

 

–

– A  

D

No.6458-3/6  

MCH6601  

SW Time

 

–

– I  

I

S

— V  

D

SD  

5

1000  

V

=0V  

V

V

=

–

–

15V  

GS  

DD  

=

–

–

4V  

7

GS  

3

2

5

3

2

t

f

–

–

0.1  

100  

7

5

7

5

t

r

3

2

3

2

t (on)  

d

–

–

0.01  

–

–

0.5  

10  

–

–

0.01  

2

3

5

7

–

–

0.6  

–

–

0.7  

–

–

0.8  

–

–

0.9  

–

–

1.0  

–

–

1.1  

IT00085  

–

–

0.1  

IT00086  

Diode Forward

V

o

ltage, V  

SD  

— V  

Drain Current, I

 

–

– A  

D

Ciss, Coss, Crss

–

– V  

DS  

V

—

Q

g  

GS  

–

–

10  

100  

f=1MHz  

V

=

–

–

10V  

DS  

I =

 

–

–

100mA  

7

5

–

–

9  

–

–

8  

–

–

7  

–

–

6  

–

–

5  

–

–

4  

–

–

3  

–

–

2  

D

3

2

10  

Ciss  

7

5

3

2

Crss  

–

–

1  

0

1.0  

0

–

–

5  

–

–

10  

–

–

15  

–

–

20  

–

–

25  

–

–

30  

IT00087  

0

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

1.6  

Total Gate Charge, Qg

 

–

–

n

C  

IT00088  

Drain to Source

V

o

ltage, V  

— V  

DS  

A S O  

P

— Ta  

D

–

–

1.0  

1.0  

0.8  

0.6  

7

I

=

–

–

0.8A(PW

≤

10

μ

s)  

DP  

5

3

2

I =

 

–

–

0.2A  

D

–

–

0.1  

7

5

0.4  

Operation in this  

area is limited by R

 

(on).  

DS  

3

2

0.2  

0

Ta=25

°

C  

Single pulse  

When mounted on ceramic substrate (900mm

2

✕

0.8mm) 1unit  

–

–

0.01  

–

–

1.0  

2

3

5

7

2

3

5

0

20  

40  

60  

80  

100  

120  

140  

160  

–

–

10  

Drain to Source

V

o

ltage, V  

DS  

— V  

Ambient Temperature, Ta

 

–

–

°

C  

IT01733  

IT01734  

No.6458-4/6  

MCH6601  

Out

l

i

n

e Draw

i

n

g  

L

a

nd Pattern Examp

l

e  

MCH6601-TL-E  

M

a

ss

(

g

)

 

Un

i

t  

Unit: mm  

0.008  

mm  

* For reference  

0.4  

0.65 0.65  

No.6458-5/6  

MCH6601  

Note on usage : Since the MCH6601 is a MOSFET product, please avoid using this device in the vicinity of  

highly charged objects.  

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  

performance may vary over time. All operating parameters, including “Typicals”

 

must be validated for each customer application by customer’s technical  

experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  

as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  

death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  

part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  

PS No.6458-6/6