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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGP4N60E/D
Designer’s Data
Sheet
Insulated Gate Bipolar
T
r
ansistor
MGP4N60E
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low V
CE(on)
. It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
IGBT IN TO–220
4.0 A @ 90
°
C
6.0 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
•
•
•
•
•
•
Industry Standard TO–220 Package
High Speed: E
off
= 60
m
J/A typical at 125
°
C
High Voltage Short Circuit Capability – 10
m
s minimum at 125
°
C, 400 V
Low On–Voltage 2.0 V typical at 3.0 A, 125
°
C
Robust High Voltage
T
e
rmination
C
ESD Protection Gate–Emitter Zener Diodes
G
C
E
G
CASE 221A–09
STYLE 9
TO–220AB
E
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Symbol
Value
600
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
V
CES
CGR
Collector–Gate Voltage (R
= 1.0 M
Ω
)
V
600
GE
Gate–Emitter Voltage — Continuous
V
GE
±
20
Collector Current — Continuous @ T
= 25
°
C
I
I
6.0
4.0
8.0
C
C25
— Continuous @ T
= 90
°
C
— Repetitive Pulsed Current (1)
C
C90
I
Apk
CM
T
o
tal Power Dissipation @ T
= 25
°
C
Derate above 25
°
C
P
D
62.5
0.51
Watts
W/
°
C
C
Operating and Storage Junction
T
e
mperature Range
Short Circuit Withstand Time
T , T
–55 to 150
10
°
C
m
s
J
stg
t
sc
(V =
400 Vdc, V
= 15 Vdc, T
= 125
°
C, R
= 20
Ω
)
CC
GE
J
G
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
R
2.0
65
°
C/W
°
C
θ
JC
JA
θ
Maximum Lead
T
e
mperature for Soldering Purposes, 1/8
″
from case for 5 seconds
Mounting
T
o
rque, 6–32 or M3 screw
T
260
L
10 lbf
S
in (1.13 N
S
m)
(1) Pulse
width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
REV 2
Motorola, Inc. 1997
MGP4N60E
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
V
Vdc
(BR)CES
(V =
0 Vdc, I
= 250
µ
Adc)
T
e
mperature Coefficient (Positive)
600
—
—
870
—
—
GE
C
mV/
°
C
Vdc
Emitter–to–Collector Breakdown Voltage (V
= 0 Vdc, I
= 100 mAdc)
V
15
—
—
GE
EC
(BR)ECS
Zero Gate Voltage Collector Current
(V =
600 Vdc, V
= 0 Vdc)
I
µ
Adc
CES
—
—
—
—
10
200
CE
GE
(V =
600 Vdc, V
= 0 Vdc, T
= 125
°
C)
CE
GE
J
Gate–Body Leakage Current (V
=
±
20 Vdc, V
= 0 Vdc)
I
—
—
50
m
Adc
GE
CE
GES
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(V =
15 Vdc, I
= 1.5 Adc)
V
CE(on)
Vdc
—
—
—
1.6
1.5
2.0
1.9
—
2.4
GE
C
(V =
15 Vdc, I
= 1.5 Adc, T
= 125
°
C)
GE
C
J
(V =
15 Vdc, I
= 3.0 Adc)
GE
C
Gate Threshold Voltage
(V =
V ,
I =
1.0 mAdc)
Threshold
T
e
mperature Coefficient (Negative)
V
GE(th)
Vdc
4.0
—
6.0
10
8.0
—
CE
GE
C
mV/
°
C
Forward Transconductance (V
= 10 Vdc, I
= 3.0 Adc)
g
fe
—
1.8
—
Mhos
CE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
C
—
—
—
342
40
—
—
—
pF
ns
ies
(V =
25 Vdc, V
= 0 Vdc,
CE
GE
C
oes
f = 1.0 MHz)
Transfer Capacitance
C
3.0
res
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
—
—
—
—
—
—
—
—
—
—
—
—
—
34
30
—
—
d(on)
Rise Time
t
(V =
360 Vdc, I
= 3.0 Adc,
r
CC
C
V
GE
= 15 Vdc, L = 300
m
H,
Turn–Off Delay Time
Fall Time
t
36
—
d(off)
R
= 20
Ω
)
G
Energy losses include “tail”
t
216
0.10
33
—
f
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
E
0.15
—
mJ
ns
off
t
t
d(on)
t
32
—
(V =
360 Vdc, I
= 3.0 Adc,
r
CC
C
V
GE
= 15 Vdc, L = 300
m
H,
Turn–Off Delay Time
Fall Time
56
—
d(off)
R
= 20
Ω,
T =
125
°
C)
J
G
Energy losses include “tail”
t
340
0.165
18.1
3.8
7.8
—
f
Turn–Off Switching Loss
Gate Charge
E
—
mJ
nC
off
Q
Q
Q
—
T
1
2
(V =
360 Vdc, I
= 3.0 Adc,
CC
C
—
V
GE
= 15 Vdc)
—
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
L
E
nH
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
—
7.5
—
(1) Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%.
2
Motorola IGBT Device Data
MGP4N60E
15
12
9
15
12
9
20 V
20 V
17.5 V
15 V
17.5 V
T =
25
°
C
J
T =
125
°
C
J
15 V
12.5 V
= 10 V
12.5 V
6
6
V
= 10 V
V
GE
GE
3
0
3
0
0
2
4
6
8
0
2
4
6
8
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
15
12.5
10
I =
3.0 A
C
V
= 100 V
5
m
s PULSE WIDTH
CE
2.0
1.8
V
= 15 V
80
m
s PULSE WIDTH
GE
2.0 A
1.5 A
7.5
5.0
1.6
1.4
T =
125
°
C
J
2.5
0
25
°
C
5
7
9
11
13
15
17
-50 -25
0
25
50
75
100
125
150
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
800
600
400
20
16
12
8
T =
25
°
C
J
V
GE
= 0 V
QT
C
ies
Q1
Q2
C
oes
T =
25
°
C
J
200
0
V
CC
I =
3.0 A
= 300 V
4
0
C
res
C
0
5
10
15
20
25
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
Motorola IGBT Device Data
3
MGP4N60E
0.20
0.15
0.10
T =
125
°
C
J
V
V
= 360 V
= 15 V
CC
V
DD
GE
= 360 V
= 15 V
GE
I =
3.0 A
C
I =
3.0 A
C
0.2
V
R =
20
W
G
2.0 A
1.0 A
2.0 A
1.5 A
0.1
0.05
0
0
5
15
25
35
45
-50
-25
0
25
50
75
100
125
150
R ,
GATE RESISTANCE (OHMS)
G
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Turn–Off Losses versus
Gate Resistance
Figure 8. Turn–Off Losses versus
Junction Temperature
0.20
0.15
0.10
10
T =
125
°
C
J
V
= 360 V
= 15 V
CC
V
GE
R =
20
W
G
T =
125
°
C
J
R
= 20
W
= 15 V
GE
GE
0.05
0
V
1
0
1
2
3
1
10
100
1000
I ,
COLLECTOR CURRENT (AMPS)
C
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 9. Turn–Off Losses versus
Collector Current
Figure 10. Reverse Biased Safe
Operating Area
4
Motorola IGBT Device Data
MGP4N60E
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
DIM MIN
MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
1
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
0.080
2.04
STYLE 9:
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–09
TO–220AB
ISSUE Z
Motorola IGBT Device Data
5
MGP4N60E
Motorola reserves the right to make changes without further notice to any products herein.
Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages.
“Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts.
Motorola does not convey any license under its patent rights nor the rights of
others. Motorola
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur.
Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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o
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MGP4N60E/D
◊
