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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGP7N60ED/D
Designer’s Data
Sheet
Insulated Gate Bipolar
T
r
ansistor
MGP7N60ED
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
IGBT & DIODE IN TO–220
7.0 A @ 90
°
C
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low V
CE(on)
. It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGB
T
s
s
ave space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
10 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
•
•
•
•
•
Industry Standard TO–220 Package
C
High Speed: E
off
= 70
m
J/A typical at 125
°
C
High Voltage Short Circuit Capability – 10
m
s minimum at 125
°
C, 400 V
Low On–Voltage 2.0 V typical at 5.0 A, 125
°
C
Soft Recovery Free Wheeling Diode
is Included in the Package
Robust High Voltage
T
e
rmination
G
C
E
G
•
•
ESD Protection Gate–Emitter Zener Diodes
CASE 221A–09
STYLE 9
TO–220AB
E
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Symbol
Value
600
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
V
CES
CGR
Collector–Gate Voltage (R
= 1.0 M
Ω
)
V
600
GE
Gate–Emitter Voltage — Continuous
V
GE
±
20
Collector Current — Continuous @ T
= 25
°
C
I
I
10
7.0
14
C
C25
— Continuous @ T
= 90
°
C
— Repetitive Pulsed Current (1)
C
C90
I
Apk
CM
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
81
Watts
C
Derate above 25
°
C
0.65
W/
°
C
Operating and Storage Junction
T
e
mperature Range
Short Circuit Withstand Time
T , T
–55 to 150
10
°
C
m
s
J
stg
t
sc
(V =
400 Vdc, V
= 15 Vdc, T
= 125
°
C, R
= 20
Ω
)
CC
GE
J
G
Thermal Resistance — Junction to Case – IGBT
R
R
R
1.5
2.7
65
°
C/W
°
C
θ
θ
JC
JC
JA
— Junction to Case – Diode
— Junction to Ambient
θ
Maximum Lead
T
e
mperature for Soldering Purposes, 1/8
″
from case for 5 seconds
Mounting
T
o
rque, 6–32 or M3 screw
T
260
L
10 lbf
S
in (1.13 N
S
m)
(1) Pulse
width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is
a trademark of Motorola, Inc.
REV 2
Motorola, Inc. 1998
MGP7N60ED
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
V
Vdc
(BR)CES
(V =
0 Vdc, I
= 25
µ
Adc)
T
e
mperature Coefficient (Positive)
600
—
—
870
—
—
GE
C
mV/
°
C
µ
Adc
Zero Gate Voltage Collector Current
I
CES
GES
(V =
600 Vdc, V
= 0 Vdc)
—
—
—
—
10
200
CE
GE
(V =
600 Vdc, V
= 0 Vdc, T
= 125
°
C)
CE
GE
J
Gate–Body Leakage Current (V
=
±
20 Vdc, V
= 0 Vdc)
I
—
—
50
m
Adc
GE
CE
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(V =
15 Vdc, I
= 2.5 Adc)
V
CE(on)
Vdc
—
—
—
1.6
1.5
2.0
1.9
—
2.4
GE
C
(V =
15 Vdc, I
= 2.5 Adc, T
= 125
°
C)
GE
C
J
(V =
15 Vdc, I
= 5.0 Adc)
GE
C
Gate Threshold Voltage
(V =
V ,
I =
1.0 mAdc)
Threshold
T
e
mperature Coefficient (Negative)
V
GE(th)
Vdc
4.0
—
6.0
10
8.0
—
CE
GE
C
mV/
°
C
Forward Transconductance (V
= 10 Vdc, I
= 5.0 Adc)
g
fe
—
2.5
—
Mhos
CE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
C
—
—
—
610
60
—
—
—
pF
ns
ies
(V =
25 Vdc, V
= 0 Vdc,
CE
GE
C
oes
f = 1.0 MHz)
Transfer Capacitance
C
10
res
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
22
24
—
—
—
—
340
—
—
—
—
—
—
—
—
—
—
—
—
d(on)
Rise Time
t
r
Turn–Off Delay Time
Fall Time
t
64
(V =
360 Vdc, I
= 5.0 Adc,
d(off)
CC
C
V
GE
= 15 Vdc, L = 300
m
H,
t
196
200
71
f
R
= 20
Ω
)
G
Energy losses include “tail”
m
J
Turn–Off Switching Loss
Turn–On Switching Loss
T
o
tal Switching Loss
Turn–On Delay Time
Rise Time
E
E
off
on
E
271
31
ts
t
t
ns
d(on)
t
24
r
Turn–Off Delay Time
Fall Time
195
220
350
135
485
27.2
7.0
13.7
(V =
360 Vdc, I
= 5.0 Adc,
d(off)
CC
C
V
GE
= 15 Vdc, L = 300
m
H,
t
f
R
= 20
Ω,
T =
125
°
C)
J
G
Energy losses include “tail”
m
J
Turn–Off Switching Loss
Turn–On Switching Loss
T
o
tal Switching Loss
Gate Charge
E
E
off
on
E
ts
Q
Q
Q
nC
T
1
2
(V =
360 Vdc, I
= 5.0 Adc,
CC
C
V
GE
= 15 Vdc)
(1) Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%.
2
Motorola IGBT Device Data
MGP7N60ED
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
V
FEC
Vdc
(I =
2.3 Adc)
—
—
—
1.7
1.3
2.0
—
—
2.3
EC
(I =
2.3 Adc, T
= 125
°
C)
EC
J
(I =
4.6 Adc)
EC
Reverse Recovery Time
t
—
—
—
—
—
—
—
—
40
17
—
—
—
—
—
—
—
—
ns
rr
(I =
4.6 Adc,
F
t
t
a
b
V
R
= 360 Vdc,
23
dI /dt
= 200 A/
m
s)
F
Reverse Recovery Stored Charge
Reverse Recovery Time
Q
60
nC
ns
RR
t
rr
105
36
(I =
4.6 Adc,
F
t
a
V
R
= 360 Vdc,
dI /dt
= 200 A/
m
s,
F
t
69
b
T =
125
°
C)
J
Reverse Recovery Stored Charge
Q
247
nC
nH
RR
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
L
E
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
—
7.5
—
20
20
15
10
17.5 V
20 V
17.5 V
20 V
15 V
T =
125
°
C
J
T =
25
°
C
J
15 V
15
10
12.5 V
12.5 V
V
GE
= 10 V
V
GE
= 10 V
5
0
5
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
12
10
8
2.2
2.0
1.8
1.6
1.4
I =
5.0 A
C
V
= 100 V
5
m
S PULSE WIDTH
CE
3.75 A
2.5 A
6
T =
125
°
C
J
4
25
°
C
V
= 15 V
80
m
S PULSE WIDTH
GE
2
0
1.2
1.0
5
6
7
8
9
10
11
12
13
-50 -25
0
25
50
75
100
125
150
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Motorola IGBT Device Data
3
MGP7N60ED
1200
20
16
12
8
V
= 0 V
GE
T =
25
°
C
J
1000
800
600
400
200
QT
Q2
C
ies
Q1
C
oes
T =
25
°
C
J
I =
5.0 A
4
0
C
C
res
0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Q ,
TOTAL GATE CHARGE (nC)
g
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
0.6
0.5
0.4
0.3
0.2
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
T =
125
°
C
V
V
= 360 V
= 15 V
I =
5.0 A
C
J
CC
I =
5.0 A
C
V
DD
GE
= 360 V
= 15 V
GE
V
R =
20
W
G
3.75 A
3.75 A
2.5 A
2.5 A
0.1
0
0.20
0.15
0
25
50
75
100
125
150
5
15
25
35
45
R ,
GATE RESISTANCE (OHMS)
G
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.5
V
V
= 360 V
= 15 V
T =
125
°
C
CC
J
V
= 360 V
= 15 V
GE
DD
T =
125
°
C
J
V
GE
R =
20
W
0.4
0.3
0.2
I =
5.0 A
C
G
3.75 A
2.5 A
0.1
0
0.1
0
0
1
2
3
4
5
6
7
8
10
15
20
25
30
35
40
45
50
I ,
COLLECTOR CURRENT (AMPS)
C
GATE RESISTANCE (OHMS)
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Losses versus
Gate Resistance
4
Motorola IGBT Device Data
MGP7N60ED
0.5
0.4
0.3
0.2
0.6
0.5
0.4
0.3
0.2
V
V
= 360 V
= 15 V
V
V
= 360 V
= 15 V
CC
CC
GE
GE
R =
20
W
G
R =
20
W
G
I =
5.0 A
C
T =
125
°
C
J
3.75 A
2.5 A
0.1
0
0.1
0
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
I ,
COLLECTOR CURRENT (AMPS)
C
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 11. Turn–Off Losses versus
Junction Temperature
Figure 12. Turn–Off Losses versus
Collector Current
10
100
T =
125
°
C
J
25
°
C
10
V
= 15 V
= 20
W
GE
R
GE
T =
125
°
C
J
1
1
0.5
1
1.5
2
2.5
3
1
10
100
1000
V
FM
, FORWARD VOLTAGE DROP (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 13. Forward Characteristics
versus Current
Figure 14. Reverse Biased Safe
Operating Area
Motorola IGBT Device Data
5
MGP7N60ED
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
DIM MIN
MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
K
Q
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
1
2
3
U
H
G
H
J
Z
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
0.080
2.04
STYLE 9:
PIN 1.
GATE
CASE 221A–09
TO–220AB
ISSUE Z
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein.
Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages.
“Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts.
Motorola does not convey any license under its patent rights nor the rights of
others. Motorola
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur.
Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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.
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o
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a
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.
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852–26629298
MGP7N60ED/D
◊
