onsemi-MGSF2N02ELT1G
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MGSF2N02EL,
MVSF2N02EL
MOSFET
– N-Channel,
SOT-23
2.8 A, 20 V
These miniature surface mount MOSFETs low R
assure
DS(on)
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
2.8 A, 20 V
R
DS(on)
= 85 m
W
(max)
Features
•
Low R
Provides Higher Efficiency and Extends Battery Life
•
Miniature SOT
−
23 Surface Mount Package Saves Board Space
Specified at Elevated Temperature
DS(on)
N
−
Channel
D
•
I
DSS
•
AEC Q101 Qualified and PPAP Capable
−
MVSF2N02EL
•
These Devices are Pb
−
Free and are RoHS Compliant
G
Applications
•
DC
−
DC Converters
•
Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
S
MARKING
DIAGRAM
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
−
Continuous
Drain Current
Symbol
Value
20
Unit
Vdc
Vdc
A
3
SOT
−
23
CASE 318
STYLE 21
V
DSS
NT M
G
G
1
V
GS
8.0
2
1
−
Continuous @ T
= 25
°
C
I
2.8
5.0
A
D
I
xxx
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
−
Single Pulse (t
= 10
m
s)
DM
p
T
o
tal Power Dissipation @ T
= 25
°
C
P
1.25
W
A
D
Operating and Storage
T
e
mperature
Range
T , T
J
−
55 to
150
°
C
stg
Thermal Resistance
Thermal Resistance
R
°
C/W
q
JA
PIN ASSIGNMENT
100
3
Drain
300
260
Maximum Lead
T
e
mperature for Soldering
T
°
C
L
Purposes, 1/8
″
from case for 10 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. 1”
Pad, t < 10 sec.
1
Gate
2
Source
2. Min
pad, steady state.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
©
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
May, 2019
−
Rev. 5
MGSF2N02EL/D
MGSF2N02EL, MVSF2N02EL
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
(BR)DSS
(V =
0 Vdc, I
= 10
m
Adc)
T
e
mperature Coefficient (Positive)
20
−
−
22
−
−
Vdc
mV/
°
C
GS
D
Zero Gate Voltage Drain Current
I
m
Adc
DSS
GSS
(V =
20 Vdc, V
= 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V =
20 Vdc, V
= 0 Vdc, T
= 125
°
C)
DS
GS
J
Gate
−
Source Leakage Current (V
=
$
8.0 Vdc, V
= 0 Vdc)
I
−
−
“
100
nA
GS
DS
Gate
−
Source Threshold Voltage
V
GS(th)
DS(on)
(V =
V ,
I =
250
m
Adc)
0.5
−
1.0
Vdc
DS
GS
D
Threshold
T
e
mperature Coefficient (Negative)
−
−
2.3
−
mV/
°
C
Static Drain
−
to
−
Source On
−
Resistance
R
m
W
(V =
4.5 Vdc, I
= 3.6 A)
−
−
78
105
85
115
GS
D
(V =
2.5 Vdc, I
= 3.1 A)
GS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
150
130
45
−
−
−
pF
iss
(V =
5.0 Vdc, V
= 0
V
,
DS
GS
Output Capacitance
Transfer Capacitance
Turn
−
On Delay Time
Rise Time
C
oss
f = 1.0 MHz)
C
rss
t
−
−
−
−
−
−
−
6.0
95
−
−
−
−
−
−
−
ns
d(on)
t
r
(V =
16 Vdc, I
= 2.8 Adc,
DD
D
V
gs
= 4.5
V
, R
=
2
.3
W
)
G
Turn
−
Off Delay Time
Fall Time
t
28
d(off)
t
125
3.5
0.6
1.5
f
Gate Charge
Q
nC
T
(V =
16 Vdc, I
= 1.75 Adc,
DS
D
Q
Q
gs
gd
V
GS
SOURCE
−
DRAIN DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
−
−
0.76
−
1.2
−
S
GS
Reverse Recovery Time
t
−
−
−
−
104
42
−
−
−
−
ns
rr
(I =
1.0 Adc, V
= 0 Vdc,
S
S
GS
t
a
t
62
b
Reverse Recovery Stored Charge
Q
0.20
m
C
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2%.
4. Switching
characteristics are independent of operating junction temperature.
ORDERING INFORMATION
†
Device
Package
Shipping
MGSF2N02ELT1G
MVSF2N02E
L
T
1G*
SOT
−
23
(Pb
−
Free)
3,000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*MVSF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable.
2
MGSF2N02EL, MVSF2N02EL
TYPICAL CHARACTERISTICS
5
8
6
T =
25
°
C
V
DS
w
10 V
J
V
V
= 7 V
= 5 V
GS
GS
4
3
2
1
0
V
= 2.2 V
GS
V
= 2.0 V
GS
V
= 2.6 V
GS
4
2
V
= 1.8 V
= 1.6 V
= 1.2 V
GS
V
GS
= 3 V
T =
55
°
C
J
T =
100
°
C
J
V
GS
GS
V
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.12
0.10
0.08
0.06
0.04
0.02
T =
25
°
C
J
T =
25
°
C
J
I
D
= 3.6 A
0.2
0.1
0
V
GS
= 2.5 V
4
5
6
7
8
0
2
4
6
8
V
GS
, GATE
−
TO
−
SOURCE VOLTAGE (V)
−
I ,
DRAIN CURRENTS (AMPS)
D
Figure 3. On
−
Resistance vs. Gate
−
to
−
Source Voltage
Figure 4. On
−
Resistance vs. Gate Voltage
1.8
1.5
1.2
0.9
0.6
10000
1000
I
= 3.6 A
= 4.5 V
V
GS
= 0 V
D
V
GS
T =
150
°
C
J
T =
100
°
C
J
100
10
−
50
−
25
0
25
50
75
100
125
150
4
8
12
16
20
T , JUNCTION TEMPERATURE (
°
C)
J
V
DS
, DRAIN
−
TO
−
SOURCE VOLTAGE (V)
Figure 5. On
−
Resistance Variation with Temperature
Figure 6. Drain
−
to
−
Source Leakage
Current vs. Voltage
3
MGSF2N02EL, MVSF2N02EL
TYPICAL CHARACTERISTICS
5
350
300
250
200
150
100
50
T =
25
°
C
J
QT
4
3
2
1
0
Q1
Q2
Ciss
Coss
I
D
= 3.6 A
Crss
16
T =
25
°
C
J
0
0
4
8
12
20
0
1
2
3
DRAIN
−
TO
−
SOURCE VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE, (nC)
Figure 7. Capacitance Variation
Figure 8. Gate
−
to
−
Source Voltage vs. Total Charge
1.8
1000
100
10
V
= 16 V
= 2.8 A
= 4.5 V
DD
V
GS
= 4.5 V
I
D
1.5
1.2
0.9
0.6
0.3
0
T =
25
°
C
J
V
GS
t
f
t
r
t
t
d(off)
d(on)
1
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
1
10
R ,
GATE RESISTANCE (
W
)
100
V
SD
, SOURCE
−
TO
−
DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
4
MGSF2N02EL, MVSF2N02EL
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
STYLE 21:
SIDE VIEW
PIN 1.
GATE
END VIEW
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.90
2.90
3X
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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−
Marking.pdf
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◊
MGSF2N02EL/D
