onsemi-MGSF3442XT1

MGSF3442XT1  

Preliminary Information  

Low R

DS(on)

Small-Signal  

MOSFE

T

s

S

ingle N-Channel  

Field Effect Transistors  

These miniature surface mount MOSFETs utilize the High Cell  

Density, HDTMOS process. Low r  

assures minimal power loss  

DS(on)  

and conserves energy, making this device ideal for use in small power  

management circuitry. Typical applications are dc

−

dc converters,  

power management in portable and battery

−

powered products such as  

computers, printers, PCMCIA cards, cellular and cordless telephones.  

N

−

CHANNEL  

ENHANCEMENT

−

MODE  

MOSFET  

•

Low R  

Provides Higher Efficiency and Extends Battery Life  

•

Miniature TSOP 6 Surface Mount Package Saves Board Space  

R

DS(on)

= 58 m

Ω

(TYP)  

DS(on)  

D

D

S

MAXIMUM RATINGS

(T =

 

25

°

C unless otherwise noted)  

CASE 318G

−

02, Style 1  

J

TSOP 6 PLASTIC  

D

Rating  

Symbol Value Unit  

D

G

Drain

−

to

−

Source Voltage  

V

20  

Vdc  

Vdc  

A

DSS  

Gate

−

to

−

Source Voltage

−

Continuous  

V

8.0  

GS  

1 2 5 6  

DRAIN  

Drain Current

−

Continuous @ T

 

= 25

°

C  

Drain Current

−

Pulsed Drain Current (t  

10

μ

s)  

I

D

1.7  

20  

A

≤

I

p

DM  

T

o

tal Power Dissipation @ T

 

= 25

°

C  

P

400  

mW  

A

D

3

Operating and Storage

T

e

mperature Range  

T , T  

J

−

55 to  

150  

°

C  

stg  

GATE  

SOURCE  

4

Thermal Resistance

−

Junction

−

to

−

Ambient  

R

300  

260  

°

C/W  

°

C  

θ

JA  

Maximum Lead

T

e

mperature for Soldering  

Purposes, for 10 seconds  

T

L

Stresses exceeding Maximum Ratings may damage the device. Maximum  

Ratings are stress ratings only. Functional operation above the Recommended  

Operating Conditions is not implied. Extended exposure to stresses above the  

Recommended Operating Conditions may affect device reliability.  

ORDERING INFORMATION  

Device  

Reel Size  

Tape Width  

Quantity  

3000  

MGSF3442XT1  

MGSF3442XT3  

7

″  

8 mm embossed tape  

8 mm embossed tape  

13

″  

10,000  

This document contains information on a product under development. ON Semiconductor  

reserves the right to change or discontinue this product without notice.  

©

Semiconductor Components Industries, LLC, 2013  

1

Publication Order Number:  

May, 2013

−

Rev. 2  

MGSF3442XT1/D  

MGSF3442XT1  

ELECTRICAL CHARACTERISTICS

(T =

 

25

°

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Drain

−

to

−

Source Breakdown Voltage  

V

Vdc  

(BR)DSS  

(V =

 

0 Vdc, I

 

= 10

μ

A)  

20  

−

−

GS  

D

Zero Gate Voltage Drain Current  

(V =

 

20 Vdc, V

 

= 0 Vdc)  

I

μ

Adc  

DSS  

−

−

−

−

1.0  

5.0  

DS  

GS  

(V =

 

20 Vdc, V

 

= 0 Vdc, T

 

= 70

°

C)  

DS  

GS  

J

Gate

−

Body Leakage Current (V  

=

8.0 Vdc, V

 

= 0)  

I

−

−

100  

nAdc  

GS  

DS  

GSS  

(1)  

ON CHARACTERISTICS  

Gate Threshold Voltage  

V

GS(th)  

Vdc  

(V =

 

V ,

 

I =

 

250

μ

Adc)  

0.6  

−

−

DS  

GS  

D

Static Drain

−

to

−

Source On

−

Resistance  

(V =

 

4.5 Vdc, I

 

= 1.7 A)  

r

Ohms  

DS(on)  

−

−

0.058  

0.072  

0.070  

0.095  

GS  

D

(V =

 

2.5 Vdc, I

 

= 1.3 A)  

GS  

D

DYNAMIC CHARACTERISTICS  

Input Capacitance  

(V =

 

5.0 V)  

C

−

−

−

90  

50  

10  

−

−

−

pF  

ns  

DS  

iss  

Output Capacitance  

Transfer Capacitance  

(V =

 

5.0 V)  

DS  

C

oss  

(V =

 

5.0 V)  

DG  

C

rss  

(2)  

SWITCHING CHARACTERISTICS  

Turn

−

On Delay Time  

t

−

−

−

−

−

8.0  

24  

36  

10  

−

20  

40  

60  

20  

−

d(on)  

Rise Time  

t

r

(V =

 

10 Vdc, I

 

= 1.0 A,  

DD  

D

V

= 10

V

, R

 

=

1

0

Ω

)  

GEN  

L

Turn

−

Off Delay Time  

Fall Time  

t

d(off)  

t

f

Gate Charge  

Q

nC  

T

SOURCE

−

DRAIN DIODE CHARACTERISTICS  

Continuous Current  

I

−

−

−

−

−

−

1.0  

5.0  

1.2  

A

A

V

S

Pulsed Current  

I

SM  

(2)  

Forward Voltage  

V

SD  

(1) Pulse

 

T

e

st: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.  

(2) Switching

 

characteristics are independent of operating junction temperature.  

2

MGSF3442XT1  

INFORMATION FOR USING THE TSOP

−

6 SURFACE MOUNT PACKAGE  

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  

Surface mount board layout is a critical portion of the total  

design. The footprint for the semiconductor packages must  

be the correct size to insure proper solder connection  

interface between the board and the package. With the  

correct pad geometry, the packages will self align when  

subjected to a solder reflow process.  

0.094  

2.4  

0.037  

0.95  

0.074  

1.9  

0.037  

0.95  

0.028  

0.7  

0.039  

1.0  

inches  

mm  

TSOP

−

6  

TSOP

−

6 POWER DISSIPATION  

The power dissipation of the TSOP

−

6 is a function of the  

drain pad size. This can vary from the minimum pad size for  

soldering to a pad size given for maximum power  

dissipation. Power dissipation for a surface mount device is  

determined by T

J(max)

, the maximum rated junction  

temperature of the die, R

θ

JA

, the thermal resistance from  

the device junction to ambient, and the operating  

temperature, T

A

. Using the values provided on the data  

sheet for the TSOP

−

6 package, P

D

can be calculated as  

follows:  

SOLDERING PRECAUTIONS  

The melting temperature of solder is higher than the rated  

temperature of the device. When the entire device is heated  

to a high temperature, failure to complete soldering within a  

short time could result in device failure. Therefore, the  

following items should always be observed in order to  

minimize the thermal stress to which the devices are  

subjected.  

•

Always preheat the device.  

•

The delta temperature between the preheat and  

T

J(max)

−

T

A  

soldering should be 100

°

C or less.*  

P

D

=  

R

θ  

JA  

•

When preheating and soldering, the temperature of the  

leads and the case must not exceed the maximum  

temperature ratings as shown on the data sheet. When  

using infrared heating with the reflow soldering method,  

the difference shall be a maximum of 10

°

C.  

The values for the equation are found in the maximum  

ratings table on the data sheet. Substituting these values  

into the equation for an ambient temperature T

A

of 25

°

C,  

one can calculate the power dissipation of the device which  

in this case is 400 milliwatts.  

•

The soldering temperature and time shall not exceed  

260

°

C for more than 10 seconds.  

150

°

C

−

25

°

C  

300

°

C/W  

•

When shifting from preheating to soldering, the  

maximum temperature gradient shall be 5

°

C or less.  

•

After soldering has been completed, the device should  

be allowed to cool naturally for at least three minutes.  

Gradual cooling should be used as the use of forced  

cooling will increase the temperature gradient and  

result in latent failure due to mechanical stress.  

•

Mechanical stress or shock should not be applied  

during cooling.  

P

D

=  

= 400 milliwatts  

The 300

°

C/W for the TSOP

−

6 package assumes the use  

of the recommended footprint on a glass epoxy printed  

circuit board to achieve a power dissipation of 400  

milliwatts. There are other alternatives to achieving higher  

power dissipation from the TSOP

−

6 package. Another  

alternative would be to use a ceramic substrate or an  

aluminum core board such as Thermal Clad

™

. Using a  

board material such as Thermal Clad, an aluminum core  

board, the power dissipation can be doubled using the  

same footprint.  

* Soldering

 

a device without preheating can cause  

excessive thermal shock and stress which can result in  

damage to the device.  

3

MGSF3442XT1  

PACKAGE DIMENSIONS  

TSOP

−

6  

CASE 318G

−

02  

ISSUE V  

NOTES:  

D

1. DIMENSIONING

 

AND TOLERANCING PER ASME Y14.5M, 1994.  

2. CONTROLLING

 

DIMENSION: MILLIMETERS.  

H

3. MAXIMUM

 

LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM  

LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS

 

D AND E1 DO NOT INCLUDE MOLD FLASH,  

PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR  

GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D  

AND E1 ARE DETERMINED AT DATUM H.  

6

1

5

4

L2  

GAUGE  

PLANE  

E1  

E

5. PIN

 

ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.  

2

3

L

MILLIMETERS  

SEATING  

M

C

NOTE 5  

DIM  

A

A1  

b

c

D

E

E1  

e

MIN  

0.90  

0.01  

0.25  

0.10  

2.90  

2.50  

1.30  

0.85  

0.20  

NOM  

1.00  

MAX  

1.10  

0.10  

0.50  

0.26  

3.10  

3.00  

1.70  

1.05  

0.60  

PLANE  

b

DETAIL Z  

e

0.06  

0.38  

0.18  

3.00  

c

2.75  

A

0.05  

1.50  

0.95  

L

0.40  

A1  

L2  

M

0.25 BSC  

−

DETAIL Z  

0

°  

1

0

°  

STYLE 1:  

PIN 1.

 

DRAIN  

2. DRAIN  

3. GATE  

4. SOURCE  

5. DRAIN  

6. DRAIN  

RECOMMENDED  

SOLDERING FOOTPRINT*  

6X  

0.60  

6X  

0.95  

3.20  

0.95  

PITCH  

DIMENSIONS: MILLIMETERS  

*For additional information on our Pb

−

Free strategy and soldering  

details, please download the ON Semiconductor Soldering and  

Mounting

T

e

chniques Reference Manual, SOLDERRM/D.  

Thermal Clad is a trademark of the Bergquist Company.  

ON Semiconductor

and  

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).

 

SCILLC owns the rights to a number of patents, trademarks,  

copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at

. SCILLC  

reserves the right to make changes without further notice to any products herein.

 

SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  

limitation special, consequential or incidental damages.

 

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  

and actual performance may vary over time.

 

All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.

 

SCILLC  

does not convey any license under its patent rights nor the rights of others.

 

SCILLC products are not designed, intended, or authorized for use as components in systems intended for  

surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  

personal injury or death may occur.

 

Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  

any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  

of the part.

 

SCILLC is an Equal Opportunity/Affirmative Action Employer.

 

This literature is subject to all applicable copyright laws and is not for resale in any manner.  

PUBLICATION ORDERING INFORMATION  

LITERATURE FULFILLMEN

T

:  

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o

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MGSF3442XT1/D  

4