onsemi-MJ11016G

MJ11015 (PNP); MJ11012,  

MJ11016 (NPN)  

MJ11016 is a Preferred Device  

High-Current  

Complementary Silicon  

Transistors  

. . . for

 

use as output devices in complementary general purpose  

amplifier applications.  

30 AMPERE DARLINGTON  

POWER TRANSISTORS  

COMPLEMENTARY SILICON  

60

−

120 VOLTS, 200 WATTS  

•

High DC Current Gain

−

 

h

FE  

= 1000 (Min) @ I

 

−

20 Adc  

C

•

Monolithic Construction with Built

−

in Base Emitter Shunt  

Resistor  

•

Junction Temperature to

+

2

00

_

C  

NPN  

PNP  

COLLECTOR  

CASE  

COLLECTOR  

CASE  

MAXIMUM RATINGS  

BASE  

1

BASE  

1

Rating  

Symbol  

Value  

Unit  

Collector

−

Emitter Voltage  

V

CEO  

Vdc  

MJ11012  

MJ11015/6  

60  

120  

EMITTER 2  

EMITTER 2  

MJ11016  

MJ11012  

MJ11015  

Collector

−

Base Voltage  

V

CB  

Vdc  

MJ11012  

MJ11015/6  

60  

120  

Emitter

−

Base Voltage  

Collector Current  

Base Current  

V

5

30  

1

Vdc  

Adc  

Adc  

EB  

MARKING  

DIAGRAM  

I

C

I

B

1

2

TO

−

204AA (TO

−

3)  

CASE 1

−

07  

T

o

tal Device Dissipation @ T

 

= 25

°

C  

P

200  

W

C

D

Derate above 25

°

C @ T

 

= 100

°

C  

1.15  

W/

°

C  

C

Operating Storage Junction  

T

e

mperature Range  

T , T  

J

−

55 to

+

2

00  

°

C  

MJ1101xG  

AYYWW  

MEX  

stg  

STYLE 1  

THERMAL CHARACTERISTICS  

Characteristic  

MJ1101x =

 

Device Code  

x = 2, 5 or 6  

Symbol  

Max  

0.87  

275  

Unit  

°

C/W  

°

C  

G

A

YY  

WW  

MEX  

= Pb

−

Free Package  

= Location

 

Code  

=

Y

e

ar  

Thermal Resistance, Junction

−

to

−

Case  

R

q

JC  

Maximum Lead

T

e

mperature for Sol-  

dering Purposes for

≤

10 Seconds  

T

L

= Work

 

Week  

= Country

 

of Orgin  

Stresses exceeding Maximum Ratings may damage the device. Maximum  

Ratings are stress ratings only. Functional operation above the Recommended  

Operating Conditions is not implied. Extended exposure to stresses above the  

Recommended Operating Conditions may affect device reliability.  

ORDERING INFORMATION  

Device  

Package  

Shipping  

MJ11012  

TO

−

3  

100 Units/Tray  

100 Units/Tray  

MJ11012G  

TO

−

3  

(Pb

−

Free)  

MJ11015  

TO

−

3  

100 Units/Tray  

100 Units/Tray  

MJ11015G  

TO

−

3  

(Pb

−

Free)  

MJ11016  

TO

−

3  

100 Units/Tray  

100 Units/Tray  

MJ11016G  

TO

−

3  

(Pb

−

Free)  

Preferred

devices are recommended choices for future use  

and best overall value.  

©

Semiconductor Components Industries, LLC, 2008  

1

Publication Order Number:  

September, 2008

−

Rev. 5  

MJ11012/D  

MJ11015 (PNP); MJ11012, MJ11016 (NPN)  

COLLECTOR  

COLLECTOR  

PNP  

NPN  

MJ11015  

MJ11012  

MJ11016  

BASE  

BASE  

≈

8.0 k  

≈

40  

≈

8.0 k  

≈

40  

EMITTER  

EMITTER  

Figure 1. Darlington Circuit Schematic  

ELECTRICAL CHARACTERISTICS

(T =

 

25

_

C unless otherwise noted.)  

C

Characteristics  

Symbol  

Min  

Max  

Unit  

OFF CHARACTERISTICS  

Collector

−

Emitter Breakdown Voltage(1)  

V

Vdc  

(BR)CEO  

(I =

 

100 mAdc, I

 

= 0)  

MJ11012  

MJ11015, MJ11016  

60  

120  

−

−

C

B

Collector

−

Emitter Leakage Current  

(V =

 

60 Vdc, R

 

= 1k ohm)  

I

mAdc  

CER  

MJ11012  

MJ11015, MJ11016  

MJ11012  

−

−

−

−

1

1

5

5

CE  

BE  

(V =

 

120 Vdc, R

 

= 1k ohm)  

CE  

BE  

(V =

 

60 Vdc, R

 

= 1k ohm, T

 

= 150

_

C)  

CE  

BE  

C

(V =

 

120 Vdc, R

 

= 1k ohm, T

 

= 150

_

C)  

MJ11015, MJ11016  

CE  

BE  

C

Emitter Cutoff Current  

(V =

 

5 Vdc, I

 

= 0)  

I

−

5

mAdc  

mAdc  

EBO  

CEO  

BE  

C

Collector

−

Emitter Leakage Current  

(V =

 

50 Vdc, I

 

= 0)  

I

−

1

CE  

B

ON CHARACTERISTICS(1)  

DC Current Gain  

h

FE  

−

(I =

 

20 Adc,V

 

= 5 Vdc)  

1000  

200  

−

−

C

CE  

(I =

 

30 Adc, V

 

= 5 Vdc)  

C

CE  

Collector

−

Emitter Saturation Voltage  

(I =

 

20 Adc, I

 

= 200 mAdc)  

V

V

Vdc  

Vdc  

CE(sat)  

−

−

3

4

C

B

(I =

 

30 Adc, I

 

= 300 mAdc)  

C

B

Base

−

Emitter Saturation Voltage  

(I =

 

20 A, I

 

= 200 mAdc)  

BE(sat)  

−

−

3.5  

5

C

B

(I =

 

30 A, I

 

= 300 mAdc)  

C

B

DYNAMIC CHARACTERISTICS  

Current

−

Gain Bandwidth Product  

h

fe  

4

−

MHz  

(I =

 

10 A, V

 

= 3 Vdc, f = 1 MHz)  

C

CE  

(1) Pulse

T

e

st: Pulse Width

=

300

μ

s, Duty Cycle

v

2.0%.  

2

MJ11015 (PNP); MJ11012, MJ11016 (NPN)  

30 k  

20 k  

2

1

PNP MJ11015  

NPN MJ11012, MJ11016  

0.5  

10 k  

0.2  

0.1  

7 k  

5 k  

0.05  

3 k  

2 k  

PNP MJ11015  

0.02  

0.01  

NPN MJ11012, MJ11016  

V

= 3 Vdc  

700  

500  

CE  

I =

 

10 mAdc  

V

= 5 Vdc  

CE  

T =

 

25

°

C  

0.005  

C

J

T =

 

25

°

C  

J

300  

0.3  

0.5 0.7  

1

2

3

5

7

10  

20 30  

10  

20 30  

50 70 100  

200 300

 

500 700

 

1.0 k  

I ,

 

COLLECTOR CURRENT (AMP)  

C

f, FREQUENCY (kHz)  

Figure 2. DC Current Gain (1)  

Figure 3. Small

−

Signal Current Gain  

5

4

3

2

1

0

50  

PNP MJ11015  

20  

10  

5

NPN MJ11012, MJ11016  

T =

 

25

°

C  

J

I /I

 

= 100  

2

C B  

1

0.5  

0.2  

BONDING WIRE LIMITATION  

V

BE(sat)  

0.1  

0.05  

THERMAL LIMITATION @ T

 

= 25

°

C  

C

SECOND BREAKDOWN LIMITATION  

V

CE(sat)  

0.02  

0.01  

MJ11012  

MJ11015, MJ11016  

20 30  

0.1  

0.2  

0.5  

1

2

5

10 20  

50 100  

2

3

5

7

10  

50 70 100  

200  

I ,

 

COLLECTOR CURRENT (AMP)  

C

V

CE  

, COLLECTOR-EMITTER VOLTAGE (VOLTS)  

Figure 4. “On” Voltages (1)  

Figure 5. Active Region DC Safe Operating Area  

There are two limitations on the power handling ability of  

a transistor average junction temperature and secondary  

At high case temperatures, thermal limitations will reduce  

the power that can be handled to values less than the  

limitations imposed by secondary breakdown.  

breakdown. Safe operating area curves indicate I

 

−

V  

C

CE  

limits of the transistor that must be observed for reliable  

operations e.g., the transistor must not be subjected to  

greater dissipation than the curves indicate.  

3

MJ11015 (PNP); MJ11012, MJ11016 (NPN)  

PACKAGE DIMENSIONS  

TO

−

204 (TO

−

3)  

CASE 1

−

07  

ISSUE Z  

NOTES:  

A

N

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: INCH.  

3. ALL RULES AND NOTES ASSOCIATED WITH  

REFERENCED TO-204AA OUTLINE SHALL APPL

Y

.  

C

SEATING  

PLANE  

−

T

−  

E

INCHES  

DIM MIN

 

MAX  

1.550 REF  

MILLIMETERS  

K

MIN  

MAX  

D

2 PL  

A

B

C

D

E

G

H

K

L

39.37 REF  

M

M

M

Y

0.13 (0.005)  

T Q  

—  

0.250  

0.038  

0.055  

1.050  

—  

6.35  

0.97  

1.40  

26.67  

8.51  

1.09  

1.77  

0.335  

0.043  

0.070  

U

−

Y

−  

L

0.430 BSC  

0.215 BSC  

0.440 0.480  

0.665 BSC  

10.92 BSC  

5.46 BSC  

11.18 12.19  

16.89 BSC  

V

H

2

1

B

G

N

Q

U

V

—  

0.151  

0.830  

0.165  

—  

3.84  

21.08  

4.19  

1.187 BSC  

30.15 BSC  

0.131  

0.188  

3.33  

4.77  

−

Q

−  

0.13 (0.005)  

STYLE 1:  

PIN 1.

 

BASE  

2. EMITTER  

CASE: COLLECTOR  

M

M

T Y  

ON Semiconductor

and  

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).

 

SCILLC reserves the right to make changes without further notice  

to any products herein.

 

SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.

 

All  

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.

 

SCILLC does not convey any license under its patent rights  

nor the rights of others.

 

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

 

Should  

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.

 

SCILLC is an Equal  

Opportunity/Affirmative Action Employer.

 

This literature is subject to all applicable copyright laws and is not for resale in any manner.  

PUBLICATION ORDERING INFORMATION  

LITERATURE FULFILLMEN

T

:  

N. American Technical Support

: 800

−

282

−

9855

T

o

ll Free  

USA/Canada  

Europe, Middle East and Africa Technical Support:  

Phone: 421 33 790 2910  

Japan Customer Focus Center  

Phone: 81

−

3

−

5773

−

3850  

ON Semiconductor Website

:

Order Literature

Literature Distribution Center for ON Semiconductor  

P

.

O. Box 5163, Denver, Colorado 80217 USA  

Phone

: 303

−

675

−

2175 or 800

−

344

−

3860

T

o

ll Free USA/Canada  

Fax

: 303

−

675

−

2176 or 800

−

344

−

3867

T

o

ll Free USA/Canada  

Email

: orderlit@onsemi.com  

For additional information, please contact your local  

Sales Representative  

MJ11012/D  

4