onsemi-MJ15022G
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MJ15022 (NPN),
MJ15024 (NPN)
Silicon Power
T
r
ansistors
The MJ15022 and MJ15024 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
•
High Safe Operating Area
16 AMPERES
SILICON POWER TRANSISTORS
200
−
250 VOLTS, 250 WATTS
•
High DC Current Gain
•
These Devices are Pb
−
Free and are RoHS Compliant*
•
Complementary to MJ15023 (PNP), MJ15025 (PNP)
SCHEMATIC
MAXIMUM RATINGS
CASE
3
Rating
Symbol
Value
Unit
Collector
−
Emitter Voltage
V
CEO
Vdc
MJ15022
MJ15024
200
250
1
BASE
Collector
−
Base Voltage
V
CBO
Vdc
MJ15022
MJ15024
350
400
2
EMITTER
Emitter
−
Base Voltage
V
5
400
16
30
5
Vdc
Vdc
Adc
Adc
Adc
EBO
Collector
−
Emitter Voltage
V
CEX
3
Collector Current
−
Continuous
Base Current
−
Continuous
I
C
I
CM
I
B
2
1
T
o
tal Device Dissipation @ T
= 25
_
C
P
250
W
W/
_
C
_
C
C
D
TO
−
204AA (TO
−
3)
CASE 1
−
07
1.43
Derate above 25
_
C
Operating and Storage Junction
T
e
mperature Range
T , T
J
−
65 to +200
stg
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse
T
e
st: Pulse Width = 5 ms, Duty Cycle
v
10%.
MARKING DIAGRAM
MJ1502x = Device
Code
x = 2 or 4
G
A
Y
WW
MEX
= Pb
−
Free Package
= Assembly
Location
=
Y
e
ar
= Work
Week
= Country
of Origin
MJ1502xG
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction
−
to
−
Case
R
0.70
_
C/W
q
JC
ORDERING INFORMATION
Device
Package
Shipping
MJ15022G
TO
−
204
(Pb
−
Free)
100 Units / Tray
MJ15024G
TO
−
204
(Pb
−
Free)
100 Units / Tray
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013
−
Rev. 12
MJ15022/D
MJ15022 (NPN), MJ15024 (NPN)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
−
CEO(sus)
(I =
100 mAdc, I
= 0)
MJ15022
MJ15024
C
B
200
250
−
−
Collector Cutoff Current
I
m
Adc
m
Adc
m
Adc
CEX
CEO
(V =
200 Vdc, V
(V =
250 Vdc, V
CE
= 1.5 Vdc)
= 1.5 Vdc)
MJ15022
MJ15024
CE
BE(off)
BE(off)
−
−
250
250
Collector Cutoff Current
(V =
150 Vdc, I
= 0)
I
MJ15022
MJ15024
CE
B
−
−
500
500
(V =
200 vdc, I
= 0)
CE
B
Emitter Cutoff Current
(V =
5 Vdc, I
= 0)
I
−
500
EBO
CE
B
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
Adc
S/b
(V =
50 Vdc, t = 0.5 s (non
−
repetitive))
(V =
80 Vdc, t = 0.5 s (non
−
repetitive))
CE
CE
5
2
−
−
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
8 Adc, V
= 4 Vdc)
C
CE
15
5
60
−
(I =
16 Adc, V
= 4 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage
(I =
8 Adc, I
= 0.8 Adc)
V
Vdc
Vdc
CE(sat)
C
B
−
−
1.4
4.0
(I =
16 Adc, I
= 3.2 Adc)
C
B
Base
−
Emitter On Voltage
(I =
8 Adc, V
= 4 Vdc)
V
−
2.2
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product
f
4
−
MHz
pF
T
(I =
1 Adc, V
= 10 Vdc, f
= 1 MHz)
C
CE
test
Output Capacitance
(V =
10 Vdc, I
= 0, f
= 1 MHz)
test
C
−
500
ob
CB
E
2. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle
v
2%.
100
50
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
T
= 25
°
C
C
breakdown. Safe operating area curves indicate I
−
V
C
CE
20
10
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0
= 200
_
C; T
is
J(pk)
C
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.
1.0
SECOND BREAKDOWN
LIMITED
0.2
0.1
0.1
0.2
0.5 10
20
50 100
250 500
1 k
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active
−
Region Safe Operating Area
2
MJ15022 (NPN), MJ15024 (NPN)
TYPICAL CHARACTERISTICS
4000
3000
T =
25
°
C
J
9
C
T =
25
°
C
ib
J
V
= 10 V
= 1 MHz
8
7
6
5
4
3
2
1
0
CE
f
Test
1000
500
C
ob
100
40
0.1
0.3
0.5
1.0
2.0
5.0
10
0.3 0.5
1
5.0
10
30 50
100
300
I ,
COLLECTOR CURRENT (AMPS)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 3. Current
−
Gain — Bandwidth Product
Figure 2. Capacitances
200
100
T =
100
°
C
J
V
CE
= 4 V
1.8
1.4
T =
25
°
C
J
50
20
10
1.0
0.8
V
BE(on)
@ V
= 4 V
CE
T =
25
°
C
J
5.0
1.0
100
°
C
25
°
C
V
@ I
/I =
10
C B
CE(sat)
0.2
0
100
°
C
0.2
0.5
1.0
2.0
5.0
10
20
0.15
0.5
1.0
2.0
5.0
10
20
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 4. DC Current Gain
Figure 5. “On” Voltage
1.8
1.4
1.0
0.6
T =
25
°
C
J
16 A
8 A
I
C
= 4 A
0.2
0
0.03
0.1
0.2
0.5 1.0 2.0
5.0
10
30
I ,
BASE CURRENT (AMPS)
B
Figure 6. Collector Saturation Region
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
DATE 05/18/1988
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
N
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPL
Y
.
C
SEATING
PLANE
−T−
E
INCHES
DIM MIN
MAX
1.550 REF
MILLIMETERS
K
D
2 PL
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
M
M
M
Y
0.13 (0.005)
T
Q
—
0.250
0.038
0.055
1.050
—
6.35
0.97
1.40
26.67
8.51
1.09
1.77
0.335
0.043
0.070
U
−Y−
L
V
H
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
2
1
B
G
N
Q
U
V
—
0.151
0.830
0.165
—
3.84
21.08
4.19
1.187 BSC
30.15 BSC
0.131
0.188
3.33
4.77
−Q−
0.13 (0.005)
M
M
Y
T
STYLE 1:
PIN 1.
BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1.
BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1.
GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1.
GROUND
2. INPUT
STYLE 5:
PIN 1.
CATHODE
2. EXTERNAL
TRIP/DELAY
CASE: ANODE
CASE: OUTPUT
STYLE 6:
PIN 1.
GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
STYLE 8:
STYLE 9:
PIN 1.
ANODE
2. OPEN
CASE: CATHODE
PIN 1.
CATHODE #1
2. CATHODE
#2
CASE: ANODE
PIN 1.
ANODE #1
2. ANODE
#2
CASE: CATHODE
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including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts.
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alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
©
Semiconductor Components Industries, LLC, 2000
1
Case Outline Number:
January, 2000 − Rev. 07Z
1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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−
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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:
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o
ll Free USA/Canada
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