onsemi-MJ15023G
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MJ15023 (PNP),
MJ15025 (PNP)
Silicon Power
T
r
ansistors
The MJ15023 and MJ15025 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
•
High Safe Operating Area
16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
•
High DC Current Gain
•
Complementary to MJ15022 (NPN), MJ15024 (NPN)
•
These Devices are Pb−Free and are RoHS Compliant*
COLLECTOR
CASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJ15023
MJ15025
V
CEO
Vdc
1
200
250
BASE
Collector−Base Voltage
MJ15023
MJ15025
V
CBO
Vdc
2
350
400
EMITTER
Emitter−Base Voltage
V
5
400
16
30
5
Vdc
Vdc
Adc
Adc
Adc
EBO
CASE
Collector−Emitter Voltage
V
CEX
Base Current − Continuous
T
o
tal Device Dissipation
I
C
I
CM
2
1
I
B
TO−204 (TO−3)
CASE 1−07
STYLE 1
P
D
@ T
= 25
_
C
250
1.43
W
W/
_
C
_
C
C
Derate above 25
_
C
Operating and Storage Junction
T
e
mperature Range
T , T
−65 to +200
MARKING DIAGRAM
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse
T
e
st: Pulse Width = 5 ms, Duty Cycle
≤
10%.
MJ1502xG
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
MJ1502x = Device
Code
x = 3 or 5
Thermal Resistance, Junction−to−Case
R
0.70
_
C/W
q
JC
G
= Pb−Free
Package
= Assembly
Location
=
Y
e
ar
A
Y
WW
MEX
= Work
Week
= Country
of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ15023G
TO−204
(Pb−Free)
100 Units / Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
MJ15025G
TO−204
(Pb−Free)
100 Units / Tray
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 12
MJ15023/D
MJ15023 (PNP), MJ15025 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
−
CEO(sus)
(I =
100 mAdc, I
= 0)
MJ15023
MJ15025
C
B
200
250
−
−
Collector Cutoff Current
I
m
Adc
m
Adc
CEX
(V =
200 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc)
CE
BE(off)
MJ15023
−
−
250
250
(V =
250 Vdc, V
CE
BE(off)
MJ15025
Collector Cutoff Current
I
CEO
(V =
150 Vdc, I
= 0)
MJ15023
CE
B
−
−
500
500
(V =
200 Vdc, I
= 0)
CE
B
MJ15025
Emitter Cutoff Current
I
m
Adc
EBO
(V =
5 Vdc, I
= 0)
Both
CE
B
−
500
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
Adc
S/b
(V =
50 Vdc, t = 0.5 s (non−repetitive))
5
2
−
−
CE
(V =
80 Vdc, t = 0.5 s (non−repetitive))
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
8 Adc, V
= 4 Vdc)
15
5
60
−
C
CE
(I =
16 Adc, V
= 4 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
8 Adc, I
= 0.8 Adc)
V
Vdc
Vdc
CE(sat)
−
−
1.4
4.0
C
B
(I =
16 Adc, I
= 3.2 Adc)
C
B
Base−Emitter On Voltage
(I =
8 Adc, V
= 4 Vdc)
V
BE(on)
−
2.2
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I =
1 Adc, V
= 10 Vdc, f
= 1 MHz)
4
−
−
C
CE
test
Output Capacitance
(V =
10 Vdc, I
= 0, f
= 1 MHz)
test
C
ob
600
CB
E
2. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle
≤
2%.
100
50
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
T =
25
°
C
C
breakdown. Safe operating area curves indicate I
− V
C
CE
20
10
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
5.0
= 200
_
C; T
is
J(pk)
C
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
1.0
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.2
0.1
0.1
0.2
0.5 10
20
50 100
250 500
1 k
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
2
MJ15023 (PNP), MJ15025 (PNP)
TYPICAL CHARACTERISTICS
4000
3000
T =
25
°
C
J
C
9
ib
V
= 10 V
= 1 MHz
CE
T =
25
°
C
J
8
7
6
5
f
Test
1000
500
C
ob
4
3
2
1
0
100
0.3 0.5
1.0
5.0
10
30 50
100
300
0.1
0.3
0.5
1.0
2.0
5.0
10
I ,
COLLECTOR CURRENT (AMPS)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 3. Current−Gain − Bandwidth Product
Figure 2. Capacitances
200
100
T =
100
°
C
V
CE
= 4.0 V
J
1.8
1.4
T =
25
°
C
J
50
20
10
1.0
0.8
T =
25
°
C
J
V
BE(on)
@ V
= 4.0 V
CE
5.0
100
°
C
25
°
C
0.5
V
@ I
/I =
10
B
CE(sat)
C
0.2
0
100
°
C
5.0
2.0
0.2
0.5
1.0
2.0
5.0
10
20
0.1
1.0
2.0
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 4. DC Current Gain
Figure 5. “On” Voltages
3
MJ15023 (PNP), MJ15025 (PNP)
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
A
N
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPL
Y
.
C
SEATING
PLANE
−T−
E
INCHES
DIM MIN
MAX
1.550 REF
MILLIMETERS
K
D
2 PL
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
M
M
M
Y
0.13 (0.005)
T Q
—
0.250
0.038
0.055
1.050
—
6.35
0.97
1.40
26.67
8.51
1.09
1.77
0.335
0.043
0.070
U
−Y−
L
V
H
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
2
1
B
G
N
Q
U
V
—
0.151
0.830
0.165
—
3.84
21.08
4.19
1.187 BSC
30.15 BSC
0.131
0.188
3.33
4.77
−Q−
0.13 (0.005)
M
M
T Y
STYLE 1:
PIN 1.
BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor
and
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limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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: 800−282−9855
T
o
ll Free
USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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.
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o
ll Free USA/Canada
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o
ll Free USA/Canada
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: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MJ15023/D
