onsemi-MJB44H11T4G
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MJB44H11 (NPN),
NJVMJB44H11 (NPN),
MJB45H11 (PNP),
NJVMJB45H11 (PNP)
Complementary
Power
T
r
ansistors
D
2
PAK for Surface Mount
SILICON POWER
TRANSISTORS
10 AMPERES,
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
80 VOLTS, 50 WATTS
MARKING
DIAGRAM
Features
•
Low Collector
−
Emitter Saturation
V
o
ltage
−
V
= 1.0 V (Max) @ 8.0 A
CE(sat)
2
D PAK
B4xH11G
AYWW
•
Fast Switching Speeds
CASE 418B
STYLE 1
•
Complementary Pairs Simplifies Designs
•
Epoxy Meets UL 94 V
−
0 @ 0.125 in
•
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
x
= 4 or 5
A
Y
= Assembly Location
=
Y
e
ar
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
WW =
Work Week
G
= Pb
−
Free Package
•
Pb
−
Free Packages are Available
ORDERING INFORMATION
MAXIMUM RATINGS
†
Device
Package
Shipping
Rating
Collector
−
Emitter Voltage
Emitter
−
Base Voltage
Symbol
Value
80
Unit
Vdc
Vdc
Adc
2
MJB44H11G
D PAK
50 Units/Rail
V
CEO
(Pb
−
Free)
V
EB
5
2
MJB44H11T4G
NJVMJB44H11T4G
MJB45H11G
D PAK
800/
T
a
pe & Reel
800/
T
a
pe & Reel
50 Units/Rail
Collector Current
−
Continuous
−
Peak
I
C
10
20
(Pb
−
Free)
2
D PAK
T
o
tal Power Dissipation
P
D
(Pb
−
Free)
@ T
= 25
°
C
C
50
0.4
W
W/
°
C
2
Derate above 25
°
C
D PAK
(Pb
−
Free)
T
o
tal Power Dissipation
P
D
2
@ T
= 25
°
C
MJB45H11T4G
NJVMJB45H11T4G
D PAK
800/
T
a
pe & Reel
800/
T
a
pe & Reel
A
2.0
0.016
W
W/
°
C
Derate above 25
°
C
(Pb
−
Free)
2
D PAK
Operating and Storage Junction
T
e
mperature Range
T , T
−
55 to 150
°
C
J
stg
(Pb
−
Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
2.5
75
Unit
°
C/W
°
C/W
Thermal Resistance, Junction
−
to
−
Case
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JC
R
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2013
−
Rev. 5
MJB44H11/D
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
Emitter Sustaining Voltage (I
= 30 mA, I
= 0)
V
CEO(sus)
80
−
−
−
−
−
Vdc
m
A
C
B
Collector Cutoff Current (V
= Rated V
, V
= 0)
CEO BE
I
10
50
CE
CES
EBO
Emitter Cutoff Current (V
= 5 Vdc)
I
−
m
A
EB
ON CHARACTERISTICS
Collector
−
Emitter Saturation Voltage (I
= 8 Adc, I
= 0.4 Adc)
V
V
−
−
−
−
−
−
1.0
1.5
−
Vdc
Vdc
−
C
B
CE(sat)
Base
−
Emitter Saturation Voltage (I
= 8 Adc, I
= 0.8 Adc)
C
B
BE(sat)
DC Current Gain (V
= 1 Vdc, I
= 2 Adc)
h
FE
60
40
CE
C
DC Current Gain (V
= 1 Vdc, I
= 4 Adc)
−
CE
C
DYNAMIC CHARACTERISTICS
Collector Capacitance (V
= 10 Vdc, f
= 1 MHz)
C
pF
CB
test
cb
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
−
−
130
230
−
−
Gain Bandwidth Product (I
= 0.5 Adc, V
= 10 Vdc, f = 20 MHz)
f
T
MHz
C
CE
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
−
−
50
40
−
−
SWITCHING TIMES
Delay and Rise Times(I
= 5 Adc, I
= 0.5 Adc)
t +
t
r
ns
ns
ns
C
B1
d
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
−
−
300
135
−
−
Storage Time(I
= 5 Adc, I
= I
= 0.5 Adc)
t
s
C
B1
B2
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
−
−
500
500
−
−
Fall Time(I
= 5 Adc, I
= I
= 0.5 Adc)
t
f
C
B1
B2
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
−
−
140
100
−
−
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
0.07
0.05
R
= 1.56
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
READ TIME AT t
t
2
1
T
– T
= P
C
Z
q
(pk) JC(t)
0.01
J(pk)
DUTY CYCLE, D = t
/t
1 2
SINGLE PULSE
0.05
0.01
0.01
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
100
200
500
1.0 k
0.02
Figure 1. Thermal Response
2
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
50
30
20
breakdown. Safe operating area curves indicate I
−
V
C
CE
1.0 ms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
100
m
s
10
m
s
10
5.0
3.0
2.0
The data of Figure 2 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
= 150
°
C; T
is
J(pk)
C
T
≤
70
°
C
dc
C
1.0
m
s
DUTY CYCLE
≤
50%
1.0
0.5
J(pk)
v
150
°
C. T
may be calculated from the data in
J(pk)
0.3
0.2
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
T
A
T
C
3.0 60
2.0 40
T
C
T
A
1.0 20
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°
C)
Figure 3. Power Derating
3
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
1000
1000
V
CE
= 4 V
1 V
V
CE
= 4 V
100
100
V
CE
= 1 V
T =
25
°
C
J
T =
25
°
C
J
10
0.1
10
0.1
1
10
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 4. MJB44H11 DC Current Gain
Figure 5. MJB45H11 DC Current Gain
1000
1000
100
10
T =
125
°
C
J
25
°
C
-ꢀ40
°
C
T =
125
°
C
J
25
°
C
100
-ꢀ40
°
C
V
CE
= 1 V
V
CE
= 1 V
10
0.1
1
10
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 6. MJB44H11 Current Gain
versus Temperature
Figure 7. MJB45H11 Current Gain
versus Temperature
1.2
1
1.2
1
V
V
BE(sat)
BE(sat)
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
I /I
= 10
C B
I /I
= 10
C B
T =
25
°
C
J
T =
25
°
C
J
V
CE(sat)
V
CE(sat)
0.1
1
10
0.1
1
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 8. MJB44H11 On
−
Voltages
Figure 9. MJB45H11 On
−
Voltages
4
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B
−
04
ISSUE K
NOTES:
1. DIMENSIONING
AND TOLERANCING
C
PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
E
3. 418B
−
01 THRU 418B
−
03 OBSOLETE,
V
NEW STANDARD 418B
−
04.
−
B
−
W
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−
T
−
SEATING
PLANE
K
W
K
L
J
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055
1.14 1.40
M
N
P
R
S
V
H
D
3 PL
M
M
T B
0.13 (0.005)
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
VARIABLE
CONFIGURATION
ZONE
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W
−
W
VIEW W
−
W
VIEW W
−
W
1
2
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.
2
5
X
04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
5
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
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: 800
−
282
−
9855
T
o
ll Free
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Phone: 81
−
3
−
5817
−
1050
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P
.
O. Box 5163, Denver, Colorado 80217 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
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o
ll Free USA/Canada
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: 303
−
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−
2176 or 800
−
344
−
3867
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o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MJB44H11/D
