onsemi-MJB5742T4G
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MJB5742T4G
NPN Silicon Power
Darlington
T
r
ansistors
The Darlington transistors are designed for high
−
voltage power
switching in inductive circuits.
Features
•
These Devices are Pb
−
Free and are RoHS Compliant
POWER DARLINGTON
TRANSISTORS
8 AMPERES, 400 VOLTS
100 WATTS
Applications
•
Small Engine Ignition
•
Switching Regulators
•
Inverters
•
Solenoid and Relay Drivers
•
Motor Controls
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Emitter Voltage
Emitter
−
Base Voltage
Symbol
Value
400
800
8
Unit
Vdc
Vdc
Vdc
Adc
≈
100
≈
50
V
CEO(sus)
V
CEV
COLLECTOR 2,4
BASE
V
EB
Collector Current
−
Continuous
I
8
16
C
I
CM
1
Base Current
−
Continuous
I
2.5
5
Adc
B
I
BM
EMITTER 3
P
2
W
A
D
D
Derate above 25
°
C
0.016
W/
_
C
MARKING
DIAGRAM
T
o
tal Device Dissipation @ T
= 25
_
C
P
100
0.8
W
C
Derate above 25
°
C
W/
_
C
Operating and Storage Junction
T
e
mperature Range
T , T
J
−
65 to +150
_
C
stg
2
B5742G
AYWW
D PAK
CASE 418B
STYLE 1
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
1.25
62.5
275
Unit
_
C/W
_
C/W
_
C
Thermal Resistance, Junction
−
to
−
Case
Thermal Resistance, Junction
−
to
−
Ambient
R
q
JC
R
q
JA
B5742 =
Specific Device Code
Maximum Lead
T
e
mperature for Soldering
Purposes 1/8
″
from Case for 5 Seconds
T
L
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse
T
e
st: Pulse Width = 5 ms, Duty Cycle
≤
10%.
ORDERING INFORMATION
†
Device
MJB5742T4G
Package
Shipping
2
D PAK
800 /
T
a
pe & Reel
(Pb
−
Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
June, 2011
−
Rev. 2
MJB5742/D
MJB5742T4G
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Collector
−
Emitter Sustaining Voltage (I
= 50 mA, I
= 0)
V
CEO(sus)
400
−
−
Vdc
C
B
Collector Cutoff Current (V
= Rated Value, V
= 1.5 Vdc)
I
−
−
−
−
1
5
mAdc
CEV
BE(off)
CEV
(V
CEV
= Rated Value, V
= 1.5 Vdc, T
= 100
_
C)
BE(off)
C
Emitter Cutoff Current (V
= 8 Vdc, I
= 0)
I
−
−
75
mAdc
EB
C
EBO
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
I
See Figure 6
See Figure 7
S/b
RBSOA
DC Current Gain (I
= 0.5 Adc, V
= 5 Vdc)
h
FE
50
200
100
400
−
−
−
C
CE
(I =
4 Adc, V
= 5 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage (I
= 4 Adc, I
= 0.2 Adc)
V
V
−
−
−
−
−
−
2
3
2.2
Vdc
C
B
CE(sat)
Collector
−
Emitter Saturation Voltage
(I =
8 Adc, I
= 0.4 Adc)
C
B
Collector
−
Emitter Saturation Voltage
(I =
4 Adc, I
= 0.2 Adc, T
= 100
_
C)
C
B
C
Base
−
Emitter Saturation Voltage (I
= 4 Adc, I
= 0.2 Adc)
−
−
−
−
−
−
2.5
3.5
2.4
Vdc
Vdc
C
B
BE(sat)
Base
−
Emitter Saturation Voltage
(I =
8 Adc, I
= 0.4 Adc)
C
B
Base
−
Emitter Saturation Voltage
(I =
4 Adc, I
= 0.2 Adc, T
= 100
_
C)
C
B
C
V
f
−
−
2.5
F
SWITCHING CHARACTERISTICS
Typical Resistive Load
(
T
a
ble 1)
Delay Time
t
t
−
−
−
−
0.04
0.5
8
−
−
−
−
m
s
m
s
m
s
m
s
d
(V =
250 Vdc, I
= 6 A
Rise Time
Storage Time
Fall Time
t
r
CC
C(pk)
I
B1
= I
= 0.25 A, t
= 25
m
s,
B2
p
s
Duty Cycle
v
1%)
t
2
f
Inductive Load, Clamped
(
T
a
ble 1)
Voltage Storage Time
t
−
−
4
2
−
−
m
s
m
s
sv
(I
= 6 A, V
= 250 Vdc
= 5 Vdc)
C(pk)
CE(pk)
= 0.06 A, V
BE(off)
I
B1
Crossover Time
t
c
2. Pulse
T
e
st: Pulse Width 300
m
s, Duty Cycle = 2%.
3. The
internal Collector
−
to
−
Emitter diode can eliminate the need for an external diode to clamp inductive loads.
T
e
sts have shown that the
Forward Recovery Voltage (V ) of this diode is comparable to that of typical fast recovery rectifiers.
f
2
MJB5742T4G
TYPICAL CHARACTERISTICS
100
80
I
C(pk)
V
CE(pk)
SECOND BREAKDOWN DERATING
90% V
90% I
CE(pk)
C
I
C
t
sv
t
rv
t
fi
t
ti
60
40
20
0
t
c
THERMAL DERATING
V
I
10% V
CE(pk)
CE
10%
2% I
I
C
90% I
C(pk)
B
B1
0
20
40
60
80
100
120
140
160
TIME
T ,
CASE TEMPERATURE (
°
C)
C
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
2000
1000
2.4
2.2
2
150
°
C
+ꢀ25
°
C
h
= 20
FE
V
CE
= 5 V
1.8
1.6
1.4
1.2
-ꢀ55
°
C
+ꢀ25
°
C
-ꢀ55
°
C
100
+150
°
C
1
0.8
0.6
0.4
10
0.1
1
2
I ,
COLLECTOR CURRENT (AMPS)
5
10
0.2
0.5
1
2
I ,
COLLECTOR CURRENT (AMPS)
5
10
C
C
Figure 3. DC Current Gain
Figure 4. Base
−
Emitter Voltage
1.8
1.6
1.4
1.2
1
h
FE
= 20
-ꢀ55
°
C
0.8
0.6
0.4
0.2
0.1
+ꢀ25
°
C
+150
°
C
0.2
0.5
1
2
5
10
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 5. Collector
−
Emitter Saturation Voltage
3
MJB5742T4G
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+ꢀ5 V
V
CC
33
1N493
3
+V
CC
MJE21
0
L
MR826
*
0.001
m
F
R
C
1N493
33
TUT
3
V
clamp
I
C
SCOPE
R
P
W
2N222
2
B
R
B
1
k
DUTY CYCLE
≤
10%
t , t
≤
10 ns
68
*SELECTED FOR
≥
1 kV
1
5.1
k
r
f
I
B
D
+ꢀ5 V
V
CE
k
1
51
1
T.U.T.
1N493
-ꢀ4 V
k
2N2905
3
270
MJE20
0
0.02
m
F
NOTE:
PW and V
Adjusted for Desired I
47
100
CC
C
1/2
W
R
B
Adjusted for Desired I
B1
-V
BE(off)
COIL DATA:
V
V
= 30 V
CC
GAP FOR 200
m
H/20 A
= 200
m
H
V
= 250 V
CC
D1 = 1N5820 OR EQUIV.
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
= 250 Vdc
= 6 A
CE(pk)
L
coil
I
C(pk)
OUTPUT WAVEFORMS
+10 V
25
m
s
I
C
t
f
CLAMPED
t ADJUSTED
TO
1
OBTAIN I
I
C(pk)
C
0
t
TEST EQUIPMENT
L
(I
coil C
)
pk
t
1
t
f
t
≈
1
SCOPE-TEKTRONICS
475 OR EQUIVALENT
–
9
.2 V
V
CC
V
CE
V
ꢁOR
L
(I
CE
t , t
< 10 ns
f
coil C
)
pk
r
t
≈
2
V
clamp
DUTY CYCLE = 1%
AND R
ADJUSTED
V
clamp
t
R
B
C
FOR DESIRED I
AND I
TIM
t
2
B
C
E
4
MJB5742T4G
SAFE OPERATING AREA INFORMATION
REVERSE BIAS
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
For inductive loads, high voltage and high current must be
sustained simultaneously during turn
−
off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage
−
current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
characteristics.
breakdown. Safe operating area curves indicate I
−
V
C
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
is
C
J(pk)
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
≥
25
_
C. Second breakdown limitations do
C
not derate the same as thermal limitations. Allowable
any case temperature by using the appropriate curve on
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
16
16
10
14
8
100
m
s
12
3
10
m
s
10
5ꢁms
1
8
0.5
0.3
BONDING WIRE LIMIT
1ꢁms
V
BE(off)
≤
5 V
6
4
dc
THERMAL LIMIT
(SINGLE PULSE)
T =
100
°
C
J
0.1
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
0.05
2
0
CEO
MJB5742
200
0.02
5
10
V
20
50
100
400
0
100
200
300
400
500
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
10
7
t
r
1
0.7
0.5
t
s
5
3
2
0.3
0.2
V
= 250 V
CC
t
d
I
= I
B1 B2
I /I
= 20
1
0.7
0.5
V
I
= 250 V
0.1
CC
C B
= I
B1 B2
0.07
0.05
I /I
= 20
C B
t
f
0.3
0.2
0.03
0.02
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.2 0.3
0.5 0.7
1
2
3
5
7
10
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 9. Turn
−
Off Time
Figure 8. Turn
−
On Time
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B
−
04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING
AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING
DIMENSION: INCH.
3. 418B
−
01 THRU 418B
−
03 OBSOLETE,
NEW STANDARD 418B
−
04.
E
V
W
−
B
−
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−
T
−
SEATING
PLANE
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055
M
N
P
R
S
V
H
D
3 PL
M
M
T B
0.13 (0.005)
1.14
1.40
VARIABLE
CONFIGURATION
ZONE
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W
−
W
VIEW W
−
W
VIEW W
−
W
1
2
3
STYLE 1:
STYLE 2:
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1.
CATHODE
2. ANODE
STYLE 6:
PIN 1.
NO CONNECT
2. CATHODE
PIN 1.
BASE
PIN 1.
GATE
PIN 1.
ANODE
2. CATHODE
3. ANODE
PIN 1.
GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. DRAIN
3. SOURCE
4. DRAIN
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3. CATHODE
4. ANODE
3. ANODE
4. CATHODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D
2
PAK 3
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
D
2
PAK 3
CASE 418B
−
04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
AYWW
xxxxxxxxG
AKA
xxxxxxxxG
AYWW
IC
Standard
Rectifier
xx
A
WL
Y
= Specific Device Code
= Assembly Location
= Wafer Lot
=
Y
e
ar
WW
G
AKA
= Work Week
= Pb
−
Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.
2
5
X
04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D
2
PAK 3
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
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.
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