onsemi-MJD112RLG
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Download  | onsemi-MJD112RLG |
MJD112 (NPN),
MJD117 (PNP)
Complementary Darlington
Power
T
r
ansistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
SILICON
POWER TRANSISTORS
2 AMPERES
Features
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
100 VOLTS, 20 WATTS
•
Straight Lead
V
e
rsion in Plastic Sleeves (“
−
1” Suffix)
•
Electrically Similar to Popular TIP31 and TIP32 Series
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
These Devices are Pb
−
Free and are RoHS Compliant*
DPAK
CASE 369C
DPAK
−
3
CASE 369D
MARKING DIAGRAMS
AYWW
J11xG
YWW
J11xG
DPAK
DPAK
−
3
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
x
= 2 or 7
G
= Pb
−
Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
*For additional information on our Pb
−
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
November, 2013
−
Rev. 13
MJD112/D
MJD112 (NPN), MJD117 (PNP)
MAXIMUM RATINGS
Rating
Symbol
Max
100
100
5
Unit
Vdc
Vdc
Vdc
Adc
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
V
CEO
V
CB
EB
V
Collector Current
Continuous
Peak
I
C
2
4
Base Current
I
B
50
mAdc
T
o
tal Power Dissipation
P
D
W
W/
°
C
20
0.16
@ T
= 25
°
C
C
Derate above 25
°
C
P
D
W
W/
°
C
1.75
0.014
@ T
= 25
°
C
A
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
−
65 to
+
1
50
°
C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction
−
to
−
Case
Symbol
Max
6.25
71.4
Unit
°
C/W
°
C/W
R
q
JC
R
q
JA
1. These
ratings are applicable when surface mounted on the minimum pad sizes recommended.
2
MJD112 (NPN), MJD117 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
m
Adc
m
Adc
mAdc
m
Adc
mAdc
CEO(sus)
(I =
30 mAdc, I
= 0)
100
−
−
20
20
2
C
B
Collector Cutoff Current
(V =
50 Vdc, I
= 0)
I
I
CEO
CE
B
Collector Cutoff Current
(V =
100 Vdc, I
= 0)
CBO
−
CB
E
Emitter Cutoff Current
(V =
5 Vdc, I
= 0)
I
EBO
−
BE
C
Collector
−
Cutoff Current
(V =
80 Vdc, I
= 0)
I
CBO
−
10
2
CB
E
Emitter
−
Cutoff Current
(V =
5 Vdc, I
= 0)
I
EBO
−
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
0.5 Adc, V
= 3 Vdc)
C
CE
500
1000
200
−
12,000
−
(I =
2 Adc, V
= 3 Vdc)
C
CE
(I =
4 Adc, V
= 3 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage
(I =
2 Adc, I
= 8 mAdc)
V
V
Vdc
CE(sat)
C
B
−
−
2
3
(I =
4 Adc, I
= 40 mAdc)
C
B
Base
−
Emitter Saturation Voltage
(I =
4 Adc, I
= 40 mAdc)
Vdc
Vdc
BE(sat)
−
−
4
C
B
Base
−
Emitter On Voltage
(I =
2 Adc, V
= 3 Vdc)
V
BE(on)
2.8
C
CE
DYNAMIC CHARACTERISTICS
Current
−
Gain
−
Bandwidth Product
f
MHz
pF
T
(I =
0.75 Adc, V
= 10 Vdc, f = 1 MHz)
25
−
C
CE
Output Capacitance
C
ob
(V =
10 Vdc, I
= 0, f = 0.1 Mhz)
CB
E
MJD117, NJVMJD117T4G
−
−
200
100
MJD112, NJVMJD112G, NJVMJD112T4G
2. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3
MJD112 (NPN), MJD117 (PNP)
4
R &
R VARIED
TO OBTAIN DESIRED CURRENT LEVELS
V
CC
-ꢂ30 V
B
C
ꢃD ,
MUST BE FAST RECOVERY TYPE, e.g.:
V
CC
I /I
= 250
= 30 V
I
= I
B1 B2
1
t
s
T =
25
°
C
C B
J
ꢃꢃ1N5825 USED ABOVE I
≈
100 mA
B
ꢃꢃMSD6100 USED BELOW I
≈
100 mA
2
B
R
C
SCOPE
TUT
V
2
R
B
t
f
APPROX
+ꢂ8 V
1
0.8
≈
8 k
≈
60
D
51
1
t
r
0
0.6
V
1
APPROX
-12 V
+ 4 V
0.4
25
m
s
t @
V
d
= 0 V
BE(off)
PNP
NPN
FOR t
AND t , D
IS DISCONNECTED
1
d
AND V
= 0
r
t , t
≤
10 ns
r
f
DUTY CYCLE = 1%
2
0.2
0.04
0.1
0.2
0.4 0.6
1
2
4
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
0.06
I ,
COLLECTOR CURRENT (AMP)
C
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
R
R
= r(t) R
q
JC
q
q
JC(t)
0.05
= 6.25
°
C/W
JC
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
t
2
1
T
– T
= P
C
q
(pk) JC(t)
J(pk)
0.03
0.02
SINGLE PULSE
0.02 0.03
0.05
DUTY CYCLE, D = t
/t
1 2
0.01
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
100
200 300
500 1000
t, TIME OR PULSE WIDTH (ms)
Figure 3. Thermal Response
4
MJD112 (NPN), MJD117 (PNP)
ACTIVE
−
REGION SAFE
−
OPERATING AREA
T
A
T
C
10
7
2.5 25
5
100ꢁ
m
s
3
2
500ꢁ
m
s
2 20
1
0.7
0.5
5ꢁms
dc
1ꢁms
1.5 15
0.3
0.2
T
C
T
A
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1
0.5
0
10
5
SURFACE
MOUNT
0.1
T =
150
°
C
J
CURVES APPLY BELOW RATED V
CEO
0
2
3
5
7
10
20 30
50 70
100
200
25
50
75
100
125
15
T, TEMPERATURE (
°
C)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T =
25
°
C
C
breakdown. Safe operating area curves indicate I
−
V
C
CE
100
70
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
50
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
= 150
_
C; T
J(pk)
C
C
ob
30
20
C
2
ib
T
< 150
_
C. T
may be calculated from the data in
J(pk)
J(pk)
PNP
NPN
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
0.04 0.06 0.1
0.2 0.4
0.6
1
4
6
10
20 40
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
5
MJD112 (NPN), MJD117 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD117
NPN MJD112
6 k
6 k
T =
125
°
C
J
V
CE
= 3 V
V
CE
= 3 V
T =
125
°
C
C
4 k
3 k
4 k
3 k
25
°
C
2 k
2 k
25
°
C
1 k
1 k
800
800
-ꢂ55
°
C
-ꢂ55
°
C
600
600
400
300
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 7. DC Current
Gain
3.4
3.4
T =
125
°
C
J
T =
125
°
C
J
3
2.6
2.2
1.8
1.4
3
I =
C
0.5 A
I =
C
0.5 A
1 A
2 A
4 A
2.6
2.2
1.8
1 A
2 A
4 A
1.4
1
1
0.6
0.1 0.2
0.6
0.1 0.2
0.5
1
2
5
10
20
50
100
0.5
1
2
5
10
20
50 100
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 8. Collector Saturation Region
2.2
1.8
1.4
1
2.2
T =
25
°
C
T =
25
°
C
J
J
1.8
V
@ I
/I =
250
C B
V
@ I
/I =
250
BE(sat) C
B
BE(sat)
V
BE
@ V
= 3 V
CE
1.4
1
V
BE
@ V
= 3 V
CE
V
@ I
/I =
250
C B
CE(sat)
V
@ I
/I =
250
C B
CE(sat)
0.6
0.6
0.2
0.2
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 9. “On Voltages
6
MJD112 (NPN), MJD117 (PNP)
NPN MJD112
PNP MJD117
+ꢂ0.8
0
+ꢂ0.8
0
*APPLIED FOR I
/I <
h /3
C B
FE
*APPLIES FOR I
/I <
h /3
C B
FE
25
°
C TO 150
°
C
-ꢂ55
°
C TO 25
°
C
-ꢂ0.8
-ꢂ1.6
-ꢂ2.4
-ꢂ3.2
-ꢂ0.8
25
°
C TO 150
°
C
-ꢂ1.6
-ꢂ2.4
-ꢂ3.2
*
q
FOR V
VC
CE(sat)
*
q
FOR V
VC
CE(sat)
-ꢂ55
°
C TO 25
°
C
25
°
C TO 150
°
C
25
°
C TO 150
°
C
-ꢂ55
°
C TO 25
°
C
q
FOR V
BE
VC
q
FOR V
0.1
VB
BE
-ꢂ4
-ꢂ55
°
C TO 25
°
C
-ꢂ4
-ꢂ4.8
-ꢂ4.8
0.04 0.06
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
0.2
0.4 0.6
1
2
4
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. Temperature Coefficients
5
5
10
10
10
10
10
REVERSE
FORWARD
REVERSE
FORWARD
4
3
2
4
10
3
V
CE
= 30 V
V
CE
= 30 V
10
10
2
T =
150
°
C
J
T =
150
°
C
J
1
1
10
10
10
10
100
°
C
25
°
C
0
0
100
°
C
25
°
C
-ꢂ0.6 -ꢂ0.4
-ꢂ0.2
-1
-1
10
10
0
+ꢂ0.2 +ꢂ0.4
+ꢂ0.6 +ꢂ0.8
+ꢂ1 +ꢂ1.2
+ꢂ1.4
+ꢂ0.6 +ꢂ0.4
+ꢂ0.2
0
-ꢂ0.2 -ꢂ0.4 -ꢂ0.6 -ꢂ0.8
-ꢂ1 -ꢂ1.2
-ꢂ1.4
V ,
BASE-EMITTER VOLTAGE (VOLTS)
BE
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut
−
Off Region
COLLECTOR
COLLECTOR
PNP
NPN
BASE
BASE
≈
8 k
≈
120
≈
8 k
≈
120
EMITTER
EMITTER
Figure 12. Darlington Schematic
7
MJD112 (NPN), MJD117 (PNP)
ORDERING INFORMATION
†
Device
Package Type
Package
Shipping
MJD112G
DPAK
369C
75 Units / Rail
75 Units / Rail
(Pb
−
Free)
NJVMJD112G*
MJD112
−
1G
MJD112RLG
MJD112T4G
NJVMJD112T4G*
MJD117G
DPAK
(Pb
−
Free)
369C
369D
369C
369C
369C
369C
369D
369C
369C
369C
DPAK
−
3
(Pb
−
Free)
75 Units / Rail
DPAK
(Pb
−
Free)
1,800
T
a
pe & Reel
2,500
T
a
pe & Reel
2,500
T
a
pe & Reel
75 Units / Rail
DPAK
(Pb
−
Free)
DPAK
(Pb
−
Free)
DPAK
(Pb
−
Free)
MJD117
−
1G
MJD117RLG
MJD117T4G
NJVMJD117T4G*
DPAK
−
3
(Pb
−
Free)
75 Units / Rail
DPAK
(Pb
−
Free)
1,800
T
a
pe & Reel
2,500
T
a
pe & Reel
2,500
T
a
pe & Reel
DPAK
(Pb
−
Free)
DPAK
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable.
8
MJD112 (NPN), MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BOD
Y
.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN
MAX
0.086 0.094
A1
0.000 0.005
0.025 0.035
b2
0.030 0.045
b3
0.180 0.215
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2
0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3
0.035 0.050
ROTATED 9
0
5
CW
L4
Z
−−−
0.040
0.155
−−−
−−−
3.93
1.01
−−−
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
9
MJD112 (NPN), MJD117 (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
R
NOTES:
1. DIMENSIONING
AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING
DIMENSION: INCH.
INCHES
DIM MIN
MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−
T
−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D
3 PL
STYLE 1:
PIN 1.
BASE
G
M
T
0.13 (0.005)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor
and
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ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MJD112/D
