onsemi-MJD122-1G
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MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power
T
r
ansistor
DPAK For Surface Mount Applications
SILICON
POWER TRANSISTOR
8 AMPERES
Designed for general purpose amplifier and low speed switching
applications.
100 VOLTS, 20 WATTS
Features
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
DPAK
CASE 369C
STYLE 1
•
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
•
High DC Current Gain: h
= 2500 (Typ) @ I
= 4.0 Adc
FE
C
•
Epoxy Meets UL 94 V−0 @ 0.125 in
COLLECTOR 2, 4
•
ESD Ratings:
♦
Human Body Model, 3B > 8000 V
♦
Machine Model, C > 400 V
BASE
1
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
EMITTER 3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
AYWW
J12xG
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
x
= 2 or 7
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2016 − Rev. 15
MJD122/D
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
MAXIMUM RATINGS
Rating
Symbol
Value
100
100
5
Unit
Vdc
Vdc
Vdc
Adc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CB
EB
V
Collector Current
Continuous
Peak
I
C
8
16
Base Current
I
B
120
mAdc
T
o
tal Power Dissipation
P
D
W
W/
°
C
@ T
= 25
°
C
20
0.16
C
Derate above 25
°
C
P
D
@ T
= 25
°
C
1.75
0.014
W
W/
°
C
A
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
−65 to +150
°
C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
6.25
71.4
Unit
°
C/W
°
C/W
R
q
JC
JA
R
q
1. These
ratings are applicable when surface mounted on the minimum pad sizes recommended.
2
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
V
Vdc
m
Adc
m
Adc
mAdc
CEO(sus)
(I =
30 mAdc, I
= 0)
100
−
−
10
10
2
C
B
Collector Cutoff Current
(V =
50 Vdc, I
= 0)
I
I
CEO
CBO
CE
B
Collector Cutoff Current
(V =
100 Vdc, I
= 0)
−
CB
E
Emitter Cutoff Current
(V =
5 Vdc, I
= 0)
I
EBO
−
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
4 Adc, V
= 4 Vdc)
C
CE
1000
100
12,000
−
(I =
8 Adc, V
= 4 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
4 Adc, I
= 16 mAdc)
V
V
Vdc
CE(sat)
C
B
−
−
2
4
(I =
8 Adc, I
= 80 mAdc)
C
B
(I =
8 Adc, I
= 80 mAdc)
Vdc
Vdc
BE(sat)
−
−
4.5
2.8
C
B
Base−Emitter On Voltage
(I =
4 Adc, V
= 4 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
|h |
MHz
pF
fe
(I =
3 Adc, V
= 4 Vdc, f = 1 MHz)
4
−
C
CE
Output Capacitance
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
C
ob
CB
E
MJD127, NJVMJD127
MJD122, NJVMJD122
−
−
300
200
Small−Signal Current Gain
h
fe
−
(I =
3 Adc, V
= 4 Vdc, f = 1 kHz)
300
−
C
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
T
A
T
C
2.5 25
2
20
T
C
1.5 15
T
A
1
0.5
0
10
5
SURFACE
MOUNT
0
25
50
75
100
125
150
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
3
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
NPN MJD122
20,000
20,000
V
CE
= 4 V
V
CE
= 4 V
10,000
7000
10,000
5000
5000
T =
150
°
C
J
T =
150
°
C
J
3000
2000
3000
2000
25
°
C
25
°
C
1000
1000
500
700
500
-ꢀ55
°
C
-ꢀ55
°
C
300
200
300
200
0.1
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.1
0.2 0.3
0.5 0.7
1
2
3
5
7
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 2. DC Current Gain
3
2.6
2.2
1.8
3
T =
25
°
C
J
T =
25
°
C
J
2.6
2.2
1.8
I
C
= 2 A
4 A
6 A
I
C
= 2 A
4 A
6 A
1.4
1
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20 30
0.3
0.5 0.7
1
2
3
5
7
10
20 30
I ,
BASE CURRENT (mA)
B
I ,
BASE CURRENT (mA)
B
Figure 3. Collector Saturation Region
3
2.5
2
3
T =
25
°
C
J
T =
25
°
C
J
2.5
2
V
V
@ I
/I =
250
C B
BE(sat)
1.5
V
@ V
= 4 V
CE
1.5
BE
V
@ V
= 4 V
CE
BE
V
@ I
/I =
250
C B
BE(sat)
1
1
@ I
/I =
250
C B
CE(sat)
V
@ I
/I =
250
C B
CE(sat)
0.5
0.1
0.5
0.1
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.2 0.3
0.5 0.7
1
2
3
5
7
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 4. “On” Voltages
4
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD122
PNP MJD127
+ꢀ5
+ꢀ4
+ꢀ3
+ꢀ2
+ꢀ5
+ꢀ4
+ꢀ3
+ꢀ2
+ꢀ1
0
*I /I
≤
h
*I /I
≤
h
C B
FE/3
C B
FE/3
25
°
C to 150
°
C
-ꢀ55
°
C to 25
°
C
+ꢀ1
0
25
°
C to 150
°
C
*
q
for V
VC CE(sat)
-ꢀ1
-ꢀ1
q
for V
CE(sat)
VC
-ꢀ2
-ꢀ3
-ꢀ2
-ꢀ3
-ꢀ55
°
C to 25
°
C
25
°
C to 150
°
C
25
°
C to 150
°
C
q
for V
BE
-ꢀ55
°
C to 25
°
C
VB
q
for V
VB
BE
-ꢀ55
°
C to 25
°
C
-ꢀ4
-ꢀ5
-ꢀ4
-ꢀ5
0.1
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.1
0.2 0.3
0.5
1
2
3
5
7
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 5. Temperature Coefficients
5
5
10
10
REVERSE
FORWARD
REVERSE
FORWARD
4
4
3
2
1
10
10
10
10
10
V
= 30 V
V
= 30 V
3
2
1
CE
CE
10
10
10
10
T =
150
°
C
J
T =
150
°
C
J
100
°
C
25
°
C
0
100
°
C
25
°
C
0
10
-1
-1
10
10
-ꢀ0.6 -ꢀ0.4 -ꢀ0.2
V
0
+ꢀ0.2 +ꢀ0.4
+ꢀ0.6 +ꢀ0.8
+ꢀ1 +ꢀ1.2
+ꢀ1.4
+ꢀ0.6 +ꢀ0.4 +ꢀ0.2
V
0
-ꢀ0.2 -ꢀ0.4 -ꢀ0.6 -ꢀ0.8
-ꢀ1 -ꢀ1.2
-ꢀ1.4
, BASE-EMITTER VOLTAGE (VOLTS)
, BASE-EMITTER VOLTAGE (VOLTS)
BE
BE
Figure 6. Collector Cut−Off Region
10,000
5000
300
200
T =
25
°
C
J
3000
2000
1000
C
ob
500
T
= 25
°
C
= 4 Vdc
CE
C
100
70
300
200
V
I
C
= 3 Adc
100
C
5
ib
50
30
20
50
PNP
NPN
PNP
NPN
30
10
0.1 0.2
0.5
1
2
10
20
50 100
1
2
5
10
20
50 100
200
500 1000
V ,
REVERSE VOLTAGE (VOLTS)
R
f, FREQUENCY (kHz)
Figure 8. Capacitance
Figure 7. Small−Signal Current Gain
5
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
5
PNP
NPN
t
s
R
& R
VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
ꢃD ,
MUST BE FAST RECOVERY TYPE, e.g.:
V
CC
-ꢀ30 V
B
3
2
1
ꢃꢃ1N5825 USED ABOVE I
≈
100 mA
B
ꢃꢃMSD6100 USED BELOW I
≈
100 mA
B
R
t
f
C
SCOPE
1
TUT
0.7
0.5
V
2
R
B
APPROX
+ꢀ8 V
0.3
0.2
≈
8 k
≈
120
D
51
1
0
t
r
V
= 30 V
I /I
= 250
V
1
CC
APPROX
-12 V
C B
+ 4 V
0.1
0.07
0.05
I
= I
B1 B2
25
m
s
t @
V
d
= 0 V
BE(off)
T =
25
°
C
J
FOR t
AND t , D
IS DISCONNECTED
1
d
AND V
= 0
r
t , t
≤
10 ns
r
f
DUTY CYCLE = 1%
2
0.1
0.3
0.5 0.7
1
2
3
5
7
10
0.2
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
I ,
COLLECTOR CURRENT (AMP)
C
Figure 9. Switching Times Test Circuit
Figure 10. Switching Times
1
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
P
(pk)
R
R
= r(t) R
q
JC
q
q
JC(t)
0.1
0.07
0.05
= 6.25
°
C/W
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
t
1
2
0.03
0.02
SINGLE PULSE
0.02 0.03
0.05
T
– T
= P
q
C (pk)
JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1 2
0.01
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
100
200 300
500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 11. Thermal Response
20
15
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
500ꢂ
m
σ
100ꢂ
m
σ
breakdown. Safe operating area curves indicate I
− V
C
CE
5
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
3
2
1ꢂms
T =
150
°
C
J
1
5ꢂms
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
= 150
_
C; T
is
J(pk)
C
0.5
0.3
0.2
BONDING WIRE LIMIT
THERMAL LIMIT
J(pk)
dc
T
= 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
0.1
< 150
_
C.
T
may be calculated from the data in
C
J(pk)
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
0.05
0.03
0.02
CURVES APPLY BELOW RATED V
CEO
1
2
3
5
7
10
20 30
50 70
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias
Safe Operating rea
6
MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
COLLECTOR
COLLECTOR
PNP
NPN
BASE
BASE
≈
8 k
≈
120
≈
8 k
≈
120
EMITTER
EMITTER
Figure 13. Darlington Schematic
ORDERING INFORMATION
†
Device
Package Type
Shipping
MJD122G
DPAK
(Pb−Free)
75 Units / Rail
2,500 /
T
a
pe & Reel
2,500 /
T
a
pe & Reel
75 Units / Rail
MJD122T4G
DPAK
(Pb−Free)
NJVMJD122T4G*
MJD127G
DPAK
(Pb−Free)
DPAK
(Pb−Free)
MJD127T4G
DPAK
(Pb−Free)
2,500 /
T
a
pe & Reel
2,500 /
T
a
pe & Reel
NJVMJD127T4G*
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
4
ISSUE F
2
1
DATE 21 JUL 2015
3
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
D
E
C
A
b3
B
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BOD
Y
.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
c2
4
2
L3
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN
MAX
0.086 0.094
A1
0.000 0.005
0.025 0.035
b2
0.028 0.045
b3
0.180 0.215
MILLIMETERS
L4
b2
e
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
BOTTOM VIEW
A
SIDE VIEW
b
b
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2
0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
GAUGE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
PLANE
C
0.020 BSC
L3
0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−−
0.040
0.155
−−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 9
0
5
CW
GENERIC
MARKING DIAGRAM*
STYLE 1:
PIN 1.
BASE
STYLE 2:
PIN 1.
GATE
2. DRAIN
STYLE 3:
PIN 1.
ANODE
STYLE 4:
STYLE 5:
PIN 1.
GATE
PIN 1.
CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. ANODE
4. CATHODE
2. ANODE
3. CATHODE
4. ANODE
3. EMITTER
3. SOURCE
4. DRAIN
3. GATE
XXXXXXG
ALYWW
AYWW
XXX
4. COLLECTOR
4. ANODE
STYLE 6:
PIN 1.
MT1
2. MT2
STYLE 7:
STYLE 8:
PIN 1.
N/C
STYLE 9:
PIN 1.
ANODE
2. CATHODE
STYLE 10:
PIN 1.
CATHODE
2. ANODE
XXXXXG
PIN 1.
GATE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
3. ANODE
4. CATHODE
3. RESISTOR
ADJUST
4. CATHODE
3. CATHODE
4. ANODE
4. COLLECTOR
IC
Discrete
SOLDERING FOOTPRINT*
XXXXXX =
Device Code
A
L
Y
WW
G
= Assembly Location
= Wafer Lot
=
Y
e
ar
= Work Week
= Pb
−
Free Package
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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