onsemi-MJD122RLG

Is Now Part of  

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March 2016  

MJD122  

NPN Silicon Darlington Transistor  

Features  

• D-PAK

 

for Surface Mount Applications  

• High

 

DC Current Gain  

Equivalent Circuit  

C

• Built-in

 

a Damper Diode at E-C  

• Lead

 

Formed for Surface Mount Applications  

• Electrically

 

Similar to Popular TIP122  

B

D-PAK  

1

• Complement

 

to MJD127  

1.Base 2.Collector 3.Emitter  

R1  

R2  

E

R1



8k

  

R2



0.12k

  

Ordering Information  

Part Number  

Top Mark  

Package  

Packing Method  

MJD122TF  

MJD122  

TO-252 3L (DPAK)  

T

a

pe and Reel  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be oper-  

able above the recommended operating conditions and stressing the parts to these levels is not recommended. In  

addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  

The absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

Units  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current (DC)  

Collector Current (Pulse)  

Base Current  

100  

100  

V

5

8

V

A

I

CP  

16  

A

I

B  

120  

mA  

W

Collector Dissipation (T

C

= 25



C)  

Collector Dissipation (T

A

= 25



C)  

Junction

T

e

mperature  

20  

P

C  

1.75  

150  

W

T

J  



C  



C  

T

STG  

Storage

T

e

mperature  

– 65 to 150  

© 1999 Fairchild Semiconductor Corporation  

MJD122 Rev. 2.4  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted

.  

Symbol  

Parameter  

Test Condition  

Min.  

Max.  

Units  

Collector-Emitter Sustaining Voltage

(1)  

V

CEO

(sus)  

I

C

= 30 mA, I

B

= 0  

100  

V

I

CEO  

I

CBO  

I

EBO  

Collector Cut-off Current  

Collector Cut-off Current  

Emitter Cut-off Current  

DC Current Gain

(1)  

V

CE

= 50 V, I

B

= 0  

V

CB

= 100 V, I

E

= 0  

V

EB

= 5

V

,

I

C

= 0  

10  

10  



A  



A  

2

mA  

V

CE

= 4 V, I

C

= 4 A  

V

CE

= 4 V, I

C

= 8 A  

1000  

100  

12K  

h

FE  

Collector-Emitter Saturation Voltage

(1)

I

C

= 4 A, I

B

= 16 mA  

I

C

= 8 A, I

B

= 80 mA  

2

4

V

V

V

CE

(sat)  

V

BE

(sat)  

V

BE

(on)  

Base-Emitter Saturation Voltage

(1)  

Base-Emitter On Voltage

(1)  

I

C

= 8 A, I

B

= 80 mA  

V

CE

= 4 V, I

C

= 4 A  

4.5  

2.8  

V

V

V

CB

= 10 V, I

E

= 0  

f= 0.1MHz  

C

ob  

Output Capacitance  

200  

pF  

Note:  

1. Pulse test: pw



300



s, duty cycle



2%.  

© 1999 Fairchild Semiconductor Corporation  

MJD122 Rev. 2.4  

2

Typical Performance Characteristics  

10  

10k  

I

C

= 250 I

B  

V

CE

= 4V  

V

BE

(sat)  

V

CE

(sat)  

1

1k  

0.1  

0.01  

0.1  

100  

0.1  

1

10  

100  

1

10  

I

C

[A], COLLECTOR CURRENT  

I

C

[A], COLLECTOR CURRENT  

Figure 1. DC current Gain  

Figure 2. Base-Emitter Saturation Voltage  

Collector-Emitter Saturation Voltage  

1000  

100  

10  

10  

V

CC

= 30V  

I

C

=250I

B  

I

B1

=I

B2  

1

t

R  

t

D

, V

BE

(off)=0  

0.1  

1

0.1  

0.01  

0.1  

1

10  

100  

1

10  

I

C

[A], COLLECTOR CURRENT  

V

CB

[V], COLLECTOR-BASE VOLTAGE  

Figure 3. Collector Output Capacitance  

Figure 4. Turn On Time  

100  

10  

V

CC

=30V  

I

C

=250I

B  

10  

1

t

STG  

t

F  

1

0.1  

0.01  

0.1  

0.1  

1

10  

100  

1000  

1

10  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

I

C

[A], COLLECTOR CURRENT  

Figure 5. Turn Off Time  

Figure 6. Safe Operating Area  

© 1999 Fairchild Semiconductor Corporation  

MJD122 Rev. 2.4  

3

Typical Performance Characteristics

(Continued)  

25  

20  

15  

10  

5

0

0

25  

50  

75  

100  

125  

150  

175  

T

C

[

o

C], CASE TEMPERATURE  

Figure 7. Power Derating Curve  

© 1999 Fairchild Semiconductor Corporation  

MJD122 Rev. 2.4  

4

0.10 B  

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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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