onsemi-MJD210T4
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Complementary Plastic
Power
T
r
ansistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
MJD200 (NPN),
MJD210 (PNP)
Designed for low voltage, low
−
power, high
−
gain audio
amplifier applications.
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS, 12.5 WATTS
Features
•
High DC Current Gain
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
•
Low Collector
−
Emitter Saturation
V
o
ltage
•
High Current
−
Gain
−
Bandwidth Product
•
Annular Construction for Low Leakage
•
Epoxy Meets UL 94 V
−
0 @ 0.125 in
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
PNP
NPN
COLLECTOR
2,4
COLLECTOR
2,4
1
1
BASE
BASE
•
These Devices are Pb
−
Free and are RoHS Compliant
3
3
EMITTER
EMITTER
MAXIMUM RATINGS
Rating
Collector
−
Base Voltage
Collector
−
Emitter Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Base Current
Symbol
Max
40
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
4
V
CB
1
2
V
CEO
25
3
V
EB
8.0
5.0
10
DPAK
I
C
CASE 369C
STYLE 1
I
CM
I
B
1.0
MARKING DIAGRAM
T
o
tal Power Dissipation
P
D
D
12.5
0.1
W
W/
°
C
@ T
= 25
°
C
C
Derate above 25
°
C
AYWW
J2x0G
P
1.4
0.011
W
W/
°
C
@ T
= 25
°
C
A
Derate above 25
°
C
A
Y
= Assembly Location
=
Y
e
ar
Operating and Storage Junction
T
e
mperature Range
T , T
−
65 to
+
1
50
°
C
J
stg
WW =
Work Week
x = 1 or 0
ESD
−
Human Body Model
ESD
−
Machine Model
HBM
MM
3B
C
V
V
G
= Pb
−
Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These
ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction
−
to
−
Case
R
10
°
C/W
q
JC
R
89.3
°
C/W
q
JA
2. These
ratings are applicable when surface mounted on the minimum pad sizes recommended.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2019
−
Rev. 14
MJD200/D
MJD200 (NPN), MJD210 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
CEO(sus)
(I =
10 mAdc, I
= 0)
25
−
C
B
Collector Cutoff Current
(V =
40 Vdc, I
= 0)
I
CBO
−
−
100
100
nAdc
m
Adc
CB
E
(V =
40 Vdc, I
= 0, T
= 125
°
C)
CB
E
J
Emitter Cutoff Current
(V =
8 Vdc, I
= 0)
I
nAdc
EBO
−
100
BE
C
ON CHARACTERISTICS
h
FE
−
(I =
500 mAdc, V
= 1 Vdc)
C
C
CE
70
45
10
−
180
−
(I =
2 Adc, V
= 1 Vdc)
CE
(I =
5 Adc, V
= 2 Vdc)
C
CE
(I =
500 mAdc, I
= 50 mAdc)
V
V
Vdc
CE(sat)
C
B
−
−
−
0.3
0.75
1.8
(I =
2 Adc, I
= 200 mAdc)
C
C
B
B
(I =
5 Adc, I
= 1 Adc)
(I =
5 Adc, I
= 1 Adc)
Vdc
Vdc
BE(sat)
−
−
2.5
1.6
C
B
(I =
2 Adc, V
= 1 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
MHz
pF
T
(I =
100 mAdc, V
= 10 Vdc, f
65
−
C
CE
test
Output Capacitance
C
ob
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
CB
E
MJD200
−
−
80
120
MJD210, NJVMJD210T4G
3. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle
[
2%.
4. f =
⎪
h
⎪•
f
.
T
fe
test
T
A
T
C
2.5 25
V
CC
+ꢀ30 V
2
20
25
m
s
R
+11 V
0
C
SCOPE
R
1.5 15
B
-ꢀ9 V
t , t
≤
10 ns
DUTY CYCLE = 1%
D
T (SURFACE
MOUNT)
A
1
51
1
0.5
0
10
5
r
f
T
C
-ꢀ4 V
R and
R VARIED
TO OBTAIN DESIRED CURRENT LEVELS
B
C
D MUST
BE FAST RECOVERY TYPE, e.g.:
1
0
FOR PNP TEST CIRCUI
T
,
REVERSE ALL POLARITIES
ꢁ1N5825 USED ABOVE I
≈
100 mA
ꢁMSD6100 USED BELOW I
≈
100 mA
B
25
50
75
100
125
150
B
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
2
MJD200 (NPN), MJD210 (PNP)
1K
10K
5K
t
d
V
CC
I /I
= 10
= 30 V
500
t
s
300
200
3K
2K
C B
I =
I
B1 B2
T =
25
°
C
J
100
50
1K
500
300
200
100
50
30
20
t
r
V
CC
I /I
= 10
= 30 V
C
B
10
5
T =
25
°
C
J
3
2
30
20
MJD200
MJD210
MJD200
MJD210
t
f
1
0.01
10
0.01
0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
0.03 0.05
0.1
0.02
0.2 0.3
0.5
1
2
3
5
10
0.02
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Turn
−
On Time
Figure 4. Turn
−
Off Time
3
MJD200 (NPN), MJD210 (PNP)
NPN
PNP
MJD200
MJD210
400
200
400
T =
150
°
C
J
25
°
C
T =
150
°
C
J
200
25
°
C
-ꢀ55
°
C
100
80
100
80
-ꢀ55
°
C
60
40
60
40
V
V
= 1 V
= 2 V
V
V
= 1 V
= 2 V
CE
CE
CE
CE
20
20
0.05 0.07
0.1
0.2 0.3
0.5 0.7
1
2
3
5
0.05 0.07 0.1
0.2 0.3
0.5 0.7
1
2
3
5
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 5. DC Current Gain
2
1.6
1.2
0.8
0.4
0
2
T =
25
°
C
T =
25
°
C
J
J
1.6
1.2
0.8
V
@ I
/I =
10
B
V
@ I
/I =
10
BE(sat) C
B
BE(sat)
C
V
BE
@ V
= 1 V
CE
V
BE
@ V
= 1 V
CE
0.4
0
V
@ I
/I =
10
C B
CE(sat)
V
@ I
/I =
10
B
CE(sat)
C
0.05 0.07
0.1
0.2 0.3
0.5 0.7
1
2
3
5
0.05 0.07
0.1
0.2 0.3
0.5 0.7
1
2
3
5
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 6. “On” Voltage
+ꢀ2.5
+ꢀ2.5
+ꢀ2
+ꢀ2
+ꢀ1.5
+ꢀ1
*APPLIES FOR I
/I
≤
h
C B
FE/3
*APPLIES FOR I
/I
≤
h
FE/3
C
B
+ꢀ1.5
+ꢀ1
25
°
C to 150
°
C
-ꢀ55
°
C to 25
°
C
+ꢀ0.5
0
+ꢀ0.5
25
°
C to 150
°
C
q
for V
CE(sat)
*
q
for V
VC
VC
CE(sat)
0
-ꢀ55
°
C to 25
°
C
25
°
C to 150
°
C
-ꢀ0.5
-ꢀ1
-ꢀ0.5
25
°
C to 150
°
C
-ꢀ1
q
for V
BE
-ꢀ55
°
C to 25
°
C
VB
-ꢀ1.5
-ꢀ2
-ꢀ1.5
q
for V
BE
VB
-ꢀ55
°
C to 25
°
C
-ꢀ2
-ꢀ2.5
-ꢀ2.5
0.05 0.07
0.1
0.2 0.3
0.5 0.7
1
2
3
5
0.05 0.07
0.1
0.2 0.3
0.5 0.7
1
2
3
5
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 7. Temperature Coefficients
4
MJD200 (NPN), MJD210 (PNP)
1
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P
(pk)
R
R
(t) = r(t)
q
JC
q
q
JC
JC
= 10
°
C/W MAX
0.05
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.07
0.05
t
1
0.02
t
2
1
0.01
T
– T
= P
q
C (pk)
JC
(t)
J(pk)
0.03
0.02
DUTY CYCLE, D = t
/t
1
2
0 (SINGLE PULSE)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
t, TIME (ms)
Figure 8. Thermal Response
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
5ꢂms
5
3
2
breakdown. Safe operating area curves indicate I
−
V
C
CE
T =
150
°
C
J
100ꢂ
m
s
500ꢂ
m
s
1ꢂms
dc
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1
= 150
°
C; T
is
J(pk)
C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
= 25
°
C
ꢁ(SINGLE PULSE)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
0.1
C
J(pk)
≤
150
°
C. T
may be calculated from the data in Figure 8.
J(pk)
SECOND BREAKDOWN LIMITED
ꢁCURVES APPLY BELOW
ꢁRATED V
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
CEO
0.01
0.3
1
2
3
5
7
10
20 30
V
CE
, COLLECTOR
−
EMITTER VOLTAGE (V)
Figure 9. Active Region Safe Operating Area
200
T =
25
°
C
J
C
ib
100
70
50
C
ob
MJD200 (NPN)
MJD210 (PNP)
30
20
0.4 0.6
1
2
4
6
10
20
40
V ,
REVERSE VOLTAGE (V)
R
Figure 10. Capacitance
5
MJD200 (NPN), MJD210 (PNP)
ORDERING INFORMATION
†
Device
Package Type
Shipping
MJD200G
DPAK
75 Units / Rail
1,800 /
T
a
pe & Reel
2,500 /
T
a
pe & Reel
75 Units / Rail
(Pb
−
Free)
MJD200RLG
MJD200T4G
MJD210G
DPAK
(Pb
−
Free)
DPAK
(Pb
−
Free)
DPAK
(Pb
−
Free)
MJD210RLG
MJD210T4G
NJVMJD210T4G*
DPAK
1,800 /
T
a
pe & Reel
2,500 /
T
a
pe & Reel
2,500 /
T
a
pe & Reel
(Pb
−
Free)
DPAK
(Pb
−
Free)
DPAK
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
4
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE G
2
1
DATE 31 MAY 2023
3
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
XXXXXX =
Device Code
A
= Assembly Location
L
= Wafer Lot
STYLE 1:
STYLE 2:
PIN 1.
GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
Y
WW
G
=
Y
e
ar
= Work Week
= Pb
−
Free Package
PIN 1.
BASE
PIN 1.
ANODE
2. CATHODE
3. ANODE
PIN 1.
CATHODE
2. ANODE
3. GATE
PIN 1.
GATE
2. ANODE
3. CATHODE
4. ANODE
2. COLLECTOR
3. EMITTER
3. SOURCE
4. DRAIN
4. COLLECTOR
4. CATHODE
4. ANODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 6:
PIN 1.
MT1
2. MT2
STYLE 7:
PIN 1.
GATE
STYLE 8:
PIN 1.
N/C
STYLE 9:
PIN 1.
ANODE
2. CATHODE
STYLE 10:
PIN 1.
CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR
ADJUST
4. CATHODE
3. CATHODE
4. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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©
Semiconductor Components Industries, LLC, 2018
onsemi
,
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−
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−
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