onsemi-MJD253T4G
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MJD243ꢀ(NPN),
MJD253ꢀ(PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier
applications.
4.0 A, 100
V
,
1
2.5 W
Features
POWER TRANSISTOR
•
High DC Current Gain
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
•
Straight Lead
V
e
rsion in Plastic Sleeves (“−1” Suffix)
COMPLEMENTARY
COLLECTOR
2, 4
COLLECTOR
2, 4
•
Low Collector−Emitter Saturation
V
o
ltage
•
High Current−Gain − Bandwidth Product
•
Annular Construction for Low Leakage
•
Epoxy Meets UL 94 V−0 @ 0.125 in
•
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
1
BASE
BASE
3
3
EMITTER
EMITTER
4
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
4
MAXIMUM RATINGS
1
2
1
2
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Symbol
Value
100
100
7.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
3
3
V
CB
IPAK
DPAK−3
CASE 369C
STYLE 1
CASE 369D
STYLE 1
V
CEO
V
EB
I
C
4.0
MARKING DIAGRAMS
I
8.0
CM
I
B
1.0
T
o
tal Device Dissipation
P
D
D
AYWW
J253G
AYWW
J2x3G
@ T
= 25
°
C
12.5
0.1
W
W/
°
C
C
Derate above 25
°
C
T
o
tal Device Dissipation
P
1.4
0.011
W
W/
°
C
A
IPAK
DPAK
Derate above 25
°
C
Operating and Storage Junction
T
e
mperature Range
T , T
−
6
5 to +150
°
C
J
stg
A
Y
= Assembly Location
=
Y
e
ar
WW =
Work Week
ESD − Human Body Model
ESD − Machine Model
HBM
MM
3B
C
V
V
x
G
= 4 or 5
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
1. When
surface mounted on minimum pad sizes recommended.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2016 − Rev. 17
MJD243/D
MJD243 (NPN), MJD253 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance
Junction−to−Case
°
C/W
R
R
10
89.3
q
JC
JA
q
2. When
surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
CEO(sus)
(I =
10 mAdc, I
= 0)
100
−
C
B
Collector Cutoff Current
(V =
100 Vdc, I
= 0)
I
CBO
−
−
100
100
nAdc
m
Adc
CB
E
(V =
100 Vdc, I
= 0, T
= 125
°
C)
CB
E
J
Emitter Cutoff Current
(V =
7.0 Vdc, I
= 0)
I
nAdc
−
EBO
−
100
BE
C
(I =
200 mAdc, V
= 1.0 Vdc)
h
FE
40
15
180
−
C
CE
(I =
1.0 Adc, V
= 1.0 Vdc)
C
CE
(I =
500 mAdc, I
= 50 mAdc)
V
Vdc
CE(sat)
C
B
−
−
0.3
0.6
(I =
1.0 Adc, I
= 100 mAdc)
C
B
(I =
2.0 Adc, I
= 200 mAdc)
V
Vdc
Vdc
BE(sat)
−
−
1.8
1.5
C
B
(I =
500 mAdc, V
= 1.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
MHz
pF
T
(I =
100 mAdc, V
= 10 Vdc, f
= 10 MHz)
40
−
−
C
CE
test
Output Capacitance
C
ob
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
50
CB
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse
T
e
st: Pulse Width = 300
m
s, Duty Cycle
[
2%.
4. f =
⎪
h
⎪•
f .
T
FE
test
2
MJD243 (NPN), MJD253 (PNP)
T
A
T
C
10
5
2.5 25
500ꢁ
m
s
100ꢁ
m
s
2
1
1ꢁms
2
20
5ꢁms
dc
0.5
1.5 15
T (SURFACE
MOUNT)
A
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
= 25
°
C
ꢀ(SINGLE PULSE)
1
0.5
0
10
5
C
0.1
T
C
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
0.02
0.01
CEO
0
1
2
5
10
20
50
100
25
50
75
100
125
150
V
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
T, TEMPERATURE (
°
C)
Figure 2. Active Region Maximum
Safe Operating Area
Figure 1. Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
variable depending on conditions. Second breakdown pulse
= 150
°
C; T
is
J(pk)
C
breakdown. Safe operating area curves indicate I
− V
limits are valid for duty cycles to 10% provided T
C
CE
J(pk)
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
≤
150
°
C. T
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
1
0.7
D = 0.5
0.5
0.2
0.3
0.2
P
(pk)
0.1
R
(t) = r(t)
q
JC
q
q
JC
JC
R
= 10
°
C/W MAX
0.05
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.07
0.05
t
0.02
0.01
1
t
2
1
T
– T
= P
q
C (pk)
JC
(t)
J(pk)
0.03
0.02
DUTY CYCLE, D = t
/t
1 2
0 (SINGLE PULSE)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
t, TIME (ms)
Figure 3. Thermal Response
3
MJD243 (NPN), MJD253 (PNP)
NPN
PNP
MJD243
MJD253
500
200
V
V
= 1.0 V
= 2.0 V
CE
T =
150
°
C
V
V
= 1.0 V
= 2.0 V
T =
150
°
C
J
CE
J
300
200
100
70
CE
CE
25
°
C
25
°
C
50
100
70
-ꢂ55
°
C
-ꢂ55
°
C
30
20
50
30
20
10
7.0
5.0
10
7.0
5.0
3.0
2.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 4. DC Current Gain
1.4
1.2
1.4
T =
25
°
C
T =
25
°
C
J
J
1.2
1.0
0.8
0.6
1.0
0.8
0.6
0.4
V
@ I
/I =
10
C B
BE(sat)
V
@ I
/I =
10
C B
BE(sat)
V
BE
@ V
= 1.0 V
CE
V
@ V
= 1.0 V
BE CE
I /I
= 10
C B
I /I
= 10
C B
0.4
0.2
0
5.0
5.0
0.2
V
CE(sat)
V
CE(sat)
0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 5. “On” Voltages
+ꢂ2.5
+ꢂ2.0
*APPLIES FOR I
/I
≤
h
C B
FE/3
+ꢂ1.5
+ꢂ1.0
25
°
C to 150
°
C
+ꢂ0.5
0
*
q
FOR V
VC
CE(sat)
-ꢂ55
°
C to 25
°
C
25
°
C to 150
°
C
-ꢂ0.5
-ꢂ1.0
-ꢂ1.5
-ꢂ1.0
25
°
C to 150
°
C
-ꢂ1.5
-ꢂ2.0
-ꢂ2.5
q
FOR V
BE
VB
-ꢂ55
°
C to 25
°
C
q
FOR V
BE
VB
-ꢂ55
°
C to 25
°
C
-ꢂ2.0
-ꢂ2.5
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 6. Temperature Coefficients
4
MJD243 (NPN), MJD253 (PNP)
V
CC
+ꢂ30 V
1K
500
t
r
R
C
300
200
25
m
s
SCOPE
+11 V
0
R
B
100
50
D
1
51
-ꢂ9.0 V
t , t
≤
10 ns
DUTY CYCLE = 1.0%
30
20
t
d
V
CC
I /I
= 10
= 30 V
r
f
-ꢂ4 V
10
5
C B
T =
25
°
C
J
R and
R VARIED
TO OBTAIN DESIRED CURRENT LEVELS
NPN MJD243
PNP MJD253
B
C
ꢀD MUST
BE FAST RECOVERY TYPE, e.g.:
3
2
1
ꢀꢀ1N5825 USED ABOVE I
≈
100 mA
ꢀꢀMSD6100 USED BELOW I
≈
100 mA
B
FOR PNP TEST CIRCUI
T
,
R
EVERSE ALL POLARITIES
B
1
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 8. Turn−On Time
Figure 7. Switching Time Test Circuit
10K
5K
200
V
CC
I /I
= 10
= 30 V
T =
25
°
C
J
t
s
3K
2K
C B
I =
I
B1 B2
100
70
T =
25
°
C
J
C
ib
1K
500
50
300
200
30
20
100
50
C
ob
30
20
t
f
MJD243 (NPN)
MJD253 (PNP)
NPN MJD243
PNP MJD253
10
0.01
10
1.0
0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
0.02
2.0 3.0
5.0 7.0
10
20 30
50 70 100
I ,
COLLECTOR CURRENT (AMPS)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 9. Turn−Off Time
Figure 10. Capacitance
200
T =
25
°
C
J
100
70
C
ib
50
30
20
C
ob
10
1
2
3
5
7
10
20 30
50
100
70
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 11. Capacitance
5
MJD243 (NPN), MJD253 (PNP)
ORDERING INFORMATION
†
Device
Package Type
Package
Shipping
MJD243G
DPAK−3
(Pb−Free)
369C
75 Units / Rail
2,500 /
T
a
pe & Reel
2,500 /
T
a
pe & Reel
75 Units / Rail
MJD243T4G
DPAK−3
(Pb−Free)
369C
369C
369D
369C
369C
NJVMJD243T4G*
MJD253−1G
DPAK−3
(Pb−Free)
IPAK
(Pb−Free)
MJD253T4G
DPAK−3
(Pb−Free)
2,500 /
T
a
pe & Reel
2,500 /
T
a
pe & Reel
NJVMJD253T4G*
DPAK−3
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
IPAK
CASE 369D
−
01
ISSUE C
DATE 15 DEC 2010
C
B
NOTES:
SCALE 1:1
1. DIMENSIONING
AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
E
R
2. CONTROLLING
DIMENSION: INCH.
INCHES
DIM MIN
MAX
MILLIMETERS
4
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
S
1
2
3
−
T
−
SEATING
PLANE
2.29 BSC
K
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D
3 PL
G
M
T
0.13 (0.005)
MARKING
DIAGRAMS
STYLE 1:
PIN 1.
BASE
STYLE 2:
STYLE 3:
PIN 1.
ANODE
STYLE 4:
PIN 1.
CATHODE
2. ANODE
Integrated
Circuits
PIN 1.
GATE
2. DRAIN
3. SOURCE
4. DRAIN
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. CATHODE
3. ANODE
4. CATHODE
Discrete
3. GATE
4. ANODE
xxxxx
ALYWW
x
YWW
xxxxxxxx
STYLE 5:
PIN 1.
GATE
2. ANODE
STYLE 6:
PIN 1.
MT1
2. MT2
STYLE 7:
PIN 1.
GATE
2. COLLECTOR
3. CATHODE
4. ANODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
xxxxxxxxx =
Device Code
A
= Assembly Location
lL
Y
= Wafer Lot
=
Y
e
ar
WW
= Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10528D
IPAK (DPAK INSERTION MOUNT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
4
ISSUE F
2
1
DATE 21 JUL 2015
3
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
D
E
C
A
b3
B
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BOD
Y
.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
c2
4
2
L3
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN
MAX
0.086 0.094
A1
0.000 0.005
0.025 0.035
b2
0.028 0.045
b3
0.180 0.215
MILLIMETERS
L4
b2
e
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
BOTTOM VIEW
A
SIDE VIEW
b
b
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2
0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
GAUGE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
PLANE
C
0.020 BSC
L3
0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−−
0.040
0.155
−−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 9
0
5
CW
GENERIC
MARKING DIAGRAM*
STYLE 1:
PIN 1.
BASE
STYLE 2:
PIN 1.
GATE
2. DRAIN
STYLE 3:
PIN 1.
ANODE
STYLE 4:
STYLE 5:
PIN 1.
GATE
PIN 1.
CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. ANODE
4. CATHODE
2. ANODE
3. CATHODE
4. ANODE
3. EMITTER
3. SOURCE
4. DRAIN
3. GATE
XXXXXXG
ALYWW
AYWW
XXX
4. COLLECTOR
4. ANODE
STYLE 6:
PIN 1.
MT1
2. MT2
STYLE 7:
STYLE 8:
PIN 1.
N/C
STYLE 9:
PIN 1.
ANODE
2. CATHODE
STYLE 10:
PIN 1.
CATHODE
2. ANODE
XXXXXG
PIN 1.
GATE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
3. ANODE
4. CATHODE
3. RESISTOR
ADJUST
4. CATHODE
3. CATHODE
4. ANODE
4. COLLECTOR
IC
Discrete
SOLDERING FOOTPRINT*
XXXXXX =
Device Code
A
L
Y
WW
G
= Assembly Location
= Wafer Lot
=
Y
e
ar
= Work Week
= Pb
−
Free Package
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
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is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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