onsemi-MJD5731T4G
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MJD5731
High Voltage PNP Silicon
Power
T
r
ansistors
Designed for line operated audio output amplifier, SWITCHMODE
power supply drivers and other switching applications.
Features
•
PNP Complements to the MJD47 thru MJD50 Series
•
Epoxy Meets UL 94 V−0 @ 0.125 in
SILICON
POWER TRANSISTORS
1.0 AMPERE
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
350 VOLTS, 15 WATTS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Symbol
Max
350
5
Unit
Vdc
Vdc
Adc
V
CEO
COLLECTOR
2, 4
V
EB
Collector Current − Continuous
I
C
1.0
Collector Current − Peak
T
o
tal Power Dissipation
I
3.0
Adc
CM
1
BASE
P
D
D
15
0.12
W
W/
°
C
@ T
= 25
°
C
C
Derate above 25
°
C
3
EMITTER
P
@ T
= 25
°
C
1.56
0.0125
W
W/
°
C
A
Derate above 25
°
C
4
Unclamped Inductive Load Energy
E
20
mJ
2
1
Operating and Storage Junction
T
e
mperature Range
T , T
−55 to +150
°
C
J
stg
3
DPAK
CASE 369C
STYLE 1
ESD − Human Body Model
ESD − Machine Model
HBM
MM
3B
C
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These
ratings are applicable when surface mounted on the minimum pad
sizes recommended.
MARKING DIAGRAM
AYWW
J
5731G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.33
80
Unit
°
C/W
°
C/W
Thermal Resistance, Junction−to−Case
R
q
JC
JA
A
Y
= Assembly Location
=
Y
e
ar
Thermal Resistance, Junction−to−Ambient
R
q
WW
J5731
G
= Work Week
= Device Code
= Pb−Free Package
Lead
T
e
mperature for Soldering
T
260
°
C
L
2. These
ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION
†
Device
MJD5731T4G
Package
Shipping
DPAK
2500/
T
a
pe & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 5
MJD5731/D
MJD5731
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
CEO(sus)
(I =
30 mAdc, I
= 0)
350
−
−
C
B
Collector Cutoff Current
(V =
250 Vdc, I
= 0)
I
mAdc
mAdc
mAdc
CEO
0.1
0.01
0.5
CE
B
Collector Cutoff Current
(V =
350 Vdc, V
= 0)
I
CES
−
CE
BE
Emitter Cutoff Current
(V =
5.0 Vdc, I
= 0)
I
EBO
−
BE
C
DC Current Gain
h
FE
−
(I =
0.3 Adc, V
= 10 Vdc)
C
CE
30
10
175
−
(I =
1.0 Adc, V
= 10 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I =
1.0 Adc, I
= 0.2 Adc)
V
Vdc
Vdc
CE(sat)
−
−
1.0
1.5
C
B
Base−Emitter On Voltage
(I =
1.0 Adc, V
= 10 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
f
MHz
−
T
(I =
0.2 Adc, V
= 10 Vdc, f = 2.0 MHz)
10
25
−
−
C
CE
Small−Signal Current Gain
(I =
0.2 Adc, V
= 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
3. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
200
1.4
1.2
V
CE
= 10 V
100
T =
150
°
C
J
25
°
C
1
0.8
0.6
0.4
0.2
0
50
T =
25
°
C
J
30
20
-ꢀ55
°
C
10
-ꢀ55
°
C
150
°
C
5.0
V
@ I
/I =
5.0
C B
CE(sat))
3.0
2.0
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
2
MJD5731
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.4
1.2
T =
– 55
°
C
1
0.8
0.6
0.4
0.2
0
J
V
@ I
/I =
5.0
C B
BE(sat)
V
@ I
/I =
5 V
C B
BE(sat)
25
°
C
V
BE(on)
@ V
= 4 V
CE
150
°
C
T =
25
°
C
J
V
@ I
/I =
5 V
C B
CE(sat)
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
0.02
0.06
0.1
0.2
0.4 0.6
1
2
0.04
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 3. Base−Emitter Voltage
Figure 4. “On” Voltages
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
5.0
breakdown. Safe operating area curves indicate I
− V
C
CE
2.0
1.0
0.5
100
m
s
1.0ꢁms
dc
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
500
m
s
T =
25
°
C
C
The data of Figure 5 is
based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
= 150
°
C; T
is
J(pk)
C
0.2
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
J(pk)
≤
150
°
C. T
0.05
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02
0.01
5.0
10
20 30
50
100
200 300
500
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Forward Bias Safe Operating Area
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.05
P
(pk)
R
R
= r(t) R
q
JC
q
q
JC(t)
0.1
0.07
0.05
= 8.33
°
C/W MAX
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
0.01
1
t
2
1
0.03
0.02
SINGLE PULSE
T
– T
= P
q
C (pk)
JC(t)
J(pk)
DUTY CYCLE, D = t
/t
1 2
0.01
0.01 0.02
0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
100
200 300
500
1 k
t, TIME (ms)
Figure 6. Thermal Response
3
MJD5731
TURN-ON PULSE
t
1
V
BE(off)
V
in
0 V
V
CC
R
R
C
AP
PROX.
-11 V
SCOPE
t
≤
7.0 ns
1
100
≤
t <
500
m
s
2
t <
15 ns
B
3
V
in
t
2
t
3
C
<< C
eb
51
jd
+ꢀ4.0 V
APPROX. +ꢀ9.0 V
DUTY CYCLE
≈
2.0%
TURN-OFF PULSE
Figure 7. Switching Time Equivalent Circuit
5.0
1.0
0.5
T =
25
°
C
J
t
s
3.0
2.0
T =
25
°
C
J
t
r
V
CC
I /I
= 5.0
= 200 V
V
CC
I /I
= 5.0
= 200 V
C B
0.3
0.2
C B
t
f
t
d
1.0
0.5
0.1
0.3
0.2
0.05
0.03
0.02
0.1
0.01
0.05
0.02 0.03
0.1
0.2 0.3
0.5
1.0
2.0
0.02
0.1
0.2 0.3
0.5
1.0
2.0
0.05
0.03 0.05
I ,
COLLECTOR CURRENT (AMPS)
C
I ,
COLLECTOR CURRENT (AMPS)
C
Figure 8. Turn−On Resistive Switching Times
Test Circuit
Figure 9. Resistive Turn−Off Switching Times
Voltage and Current Waveforms
t
≈
3 ms
(SEE NOTE 1)
w
V
MONITOR
CE
0 V
-ꢀ5 V
INPUT
VOLTAGE
R
=
BB1
TUT
MJE171
100 mH
150
W
100 ms
50
50
+
–
V
= 20 V
CC
INPUT
0.63 A
I MONITOR
C
COLLECTOR
CURRENT
R
=
BB2
0 V
100
W
R =
S
V
0
=
V
CER
+
–
BB2
V
BB1
= 10 V
0.1
W
COLLECTOR
VOLTAGE
10 V
V
CE(sat)
Figure 10. Inductive Load Switching
4
MJD5731
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BOD
Y
.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN
MAX
0.086 0.094
A1
0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2
0.030 0.045
b3
0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2
0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
ROTATED 9
0
5
CW
L3
0.035 0.050
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
6.172
0.243
1.6
0.063
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. SCILLC
reserves the right to make changes without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC
does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
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T
:
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o
ll Free
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MJD5731/D
