onsemi-MJE15028G
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MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power
T
r
ansistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
8 AMPERE
•
High Current Gain − Bandwidth Product
•
TO−220 Compact Package
•
These Devices are Pb−Free and are RoHS Compliant*
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
MAXIMUM RATINGS
PNP
NPN
Rating
Symbol
Value
Unit
COLLECTOR
2,4
COLLECTOR
2,4
Collector−Emitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
V
CEO
Vdc
120
150
Collector−Base Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
V
CB
Vdc
1
1
120
150
BASE
BASE
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
V
5.0
8.0
16
Vdc
Adc
Adc
Adc
3
3
EB
EMITTER
EMITTER
I
C
I
CM
4
I
2.0
B
T
o
tal Device Dissipation
P
P
D
@ T
= 25
_
C
50
0.40
W
W/
_
C
C
TO−220
CASE 221A
STYLE 1
Derate above 25
°
C
T
o
tal Device Dissipation
D
@ T
= 25
_
C
2.0
0.016
W
A
Derate above 25
°
C
W/
_
C
_
C
1
2
3
Operating and Storage Junction
T
e
mperature Range
T , T
−65 to +150
J
stg
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
2.5
Unit
_
C/W
_
C/W
MJE150xxG
AY WW
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
JA
R
62.5
q
MJE150xx =
Device Code
x = 28, 29, 30, or 31
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 7
MJE15028/D
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
ELECTRICAL CHARACTERISTICS
(T =
25
_
C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V
Vdc
CEO(sus)
(I =
10 mAdc, I
= 0)
MJE15028, MJE15029
MJE15030, MJE15031
C
B
120
150
−
−
Collector Cutoff Current
I
I
mAdc
CEO
(V =
120 Vdc, I
= 0)
CE
B
MJE15028, MJE15029
(V =
150 Vdc, I
= 0)
−
−
0.1
0.1
CE
B
MJE15030, MJE15031
Collector Cutoff Current
m
Adc
CBO
(V =
120 Vdc, I
= 0)
CB
E
MJE15028, MJE15029
(V =
150 Vdc, I
= 0)
−
−
10
10
CB
E
MJE15030, MJE15031
Emitter Cutoff Current
I
m
Adc
EBO
(V =
5.0 Vdc, I
= 0)
−
10
BE
C
DC Current Gain
h
−
FE
FE
(I =
0.1 Adc, V
= 2.0 Vdc)
C
CE
40
40
40
20
−
−
−
−
(I =
2.0 Adc, V
= 2.0 Vdc)
C
CE
(I =
3.0 Adc, V
= 2.0 Vdc)
C
CE
CE
(I =
4.0 Adc, V
= 2.0 Vdc)
C
DC Current Gain Linearity
(V From
2.0 V to 20
V
, I
F
rom 0.1 A to 3 A)
CE
h
Typ
2
C
(NPN to PNP)
3
Collector−Emitter Saturation Voltage
(I =
1.0 Adc, I
= 0.1 Adc)
V
Vdc
Vdc
CE(sat)
−
−
0.5
1.0
C
B
Base−Emitter On Voltage
(I =
1.0 Adc, V
= 2.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
T
MHz
(I =
500 mAdc, V
= 10 Vdc, f
= 10 MHz)
30
−
C
CE
test
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
2. f =
⎪
h
⎪•
f .
test
T
fe
T
A
T
C
3.0 60
2.0 40
T
C
T
A
1.0 20
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
2
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
P
(pk)
Z
= r(t) R
q
JC
q
JC(t)
0.05
0.02
0.07
0.05
R
= 1.56
°
C/W MAX
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
READ TIME AT t
t
2
1
T
– T
= P
C
Z
q
(pk) JC(t)
0.01
J(pk)
DUTY CYCLE, D = t
/t
1
2
SINGLE PULSE
0.05
0.01
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500 1.0
k
0.02
t, TIME (ms)
Figure 2. Thermal Response
20
16
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100
m
s
10
breakdown. Safe operating area curves indicate I
− V
C
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
5ꢀms
dc
1.0
= 150
_
C;
J(pk)
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
T is
variable depending on conditions. Second breakdown
C
pulse limits are valid for duty cycles to 10% provided T
J(pk)
LIMITED @ T
= 25
°
C
C
< 150
_
C. T
0.1
J(pk)
MJE15028
MJE15029
MJE15030
MJE15031
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02
2.0
5.0
10
20
50
120 150
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
1000
8.0
5.0
C
C
(NPN)
(PNP)
ib
500
200
ib
I /I
= 10
B
C
100
50
T
= 25
°
C
C
(PNP)
(NPN)
C
ob
3.0
2.0
1.0
0
V
BE(off)
= 9 V
30
20
5 V
3 V
C
ob
1.5 V
0 V
10
0
100 110 120 130 140 150
1.5
3.0
5.0 7.0
10
30
50
100 150
V ,
REVERSE VOLTAGE (VOLTS)
R
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitances
Figure 4. Reverse−Bias Switching
Safe Operating Area
3
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
100
100
50
90
(PNP)
(NPN)
30
20
60
50
V
= 10 V
= 0.5 A
CE
PNP
NPN
I
C
T
= 25
°
C
C
10
20
10
0
5.0
0.5
1.0
2.0
3.0
5.0
7.0
10
0.1
0.2
0.5
1.0
2.0
5.0
10
0.7
I ,
COLLECTOR CURRENT (AMP)
C
f, FREQUENCY (MHz)
Figure 7. Current Gain−Bandwidth Product
PNP — MJE15029 MJE15031
Figure 6. Small−Signal Current Gain
NPN — MJE15028 MJE15030
1K
1K
V
CE
= 2 V
V
CE
= 2.0 V
500
500
T =
150
°
C
J
T =
150
°
C
J
200
150
200
100
50
T =
25
°
C
T =
25
°
C
J
J
100
70
T =
-ꢁ55
°
C
J
T =
-ꢁ55
°
C
J
50
30
20
20
10
10
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
0.5
1.0
2.0
5.0
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
NPN
PNP
T =
25
°
C
J
1.8
1.4
T =
25
°
C
J
1.6
1.2
1.0
1.0
0.8
V
@ I
/I =
10
C B
V
@ I
/I =
10
C B
BE(sat)
BE(sat)
0.6
0.2
V
@ V
= 2.0 V
CE
BE(on)
V
@ V
= 2.0 V
CE
BE(on)
0.4
0
V
= I
/I =
20
C B
CE(sat)
V
= I
/I =
20
C B
CE(sat)
I /I
= 10
C B
I /I
= 10
C B
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2
0.5
1.0
2.0
5.0
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 9. “On” Voltage
4
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
10
1.0
0.5
V
= 80 V
V
CC
= 80 V
CC
I /I
= 10
I /I
= 10, I
= I
C B
B1 B2
C
B
5.0
T =
25
°
C
J
t (NPN) T =
25
°
C
s J
3.0
2.0
t (NPN,
PNP)
d
0.2
t (PNP)
r
t (PNP)
s
0.1
1.0
0.5
t (PNP)
f
0.05
0.03
0.02
t (NPN)
r
0.2
0.1
t (NPN)
f
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
0.1
0.2 0.3
0.5
2.0
5.0
10
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. Turn−On Times
Figure 11. Turn−Off Times
ORDERING INFORMATION
Device
Package
Shipping
MJE15028G
TO−220
(Pb−Free)
50 Units / Rail
MJE15029G
MJE15030G
MJE15031G
TO−220
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
TO−220
(Pb−Free)
TO−220
(Pb−Free)
5
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MILLIMETERS
4
1
MAX
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1.
BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
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. SCILLC
reserves the right to make changes without further notice to any products herein.
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time.
All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
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does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part.
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T
:
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o
ll Free
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MJE15028/D
